ESAC25(C,N,D) (10A) (200V to 400V / 10A) Outline drawings, mm 10+0.5 0 4.50.2 1.32 1.2 0 14 -0.5 3.70.2 150.2 2.70.1 O3.60.2 6.40.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB SC-46 Connection diagram 2 Applications ESAC25- C 1 ESAC25- N 1 ESAC25- D 1 3 2 High speed switching 3 2 Maximum ratings and characteristics 3 Absolute maximum ratings Item Symbol Rating Conditions -02 -04 Unit Repetitive peak reverse voltage VRRM 200 400 V Non-repetitive peak reverse voltage VRSM 250 450 V Average output current IO Square wave, duty=1/2, Tc=106C 10* A Surge current IFSM Sine wave 10ms 70 A Operating junction temperature Tj -40 to +150 C Storage temperature Tstg -40 to +150 C *Average forward current of centertap full wave connection Electrical characteristics (Ta=25C Unless otherwise specified ) Item Symbol Conditions Max. Unit 1.3 V Forward voltage drop VFM IFM=2.5A Reverse current IRRM VR=VRRM Reverse recovery time t rr IF=0.1A, IR=0.1A 0.4 s Thermal resistance Rth(j-c) Junction to case 3.0* C/W 50 A ESAC25(C,N,D)(10A) (200V to 400V / 10A ) Characteristics Reverse characteristics Forward characteristics 300 10 100 5 30 3 IR 10 [A] IF [A] 3 1 1 0.5 0.3 0.1 0.1 0 0.4 0.6 0.8 1.0 1.2 1.4 0.05 1.6 0 100 200 300 400 500 VR [V] VF [V] Forward power dissipation Output current-case temperature 12 140 10 120 8 Tc 100 6 WF [W] [C] 80 4 60 2 40 0 0 1 2 3 4 5 0 6 2 4 Io [A] 6 8 10 12 Io [A] Junction capacitance characteristics Surge capability 100 300 50 30 100 Cj IFSM [pF] [A] 50 10 30 5 3 10 5 10 30 VR [V] 50 100 1 3 5 10 [time] (at 50Hz) 30 ESAC25(C,N,D)(10A) (200V to 400V / 10A ) Transient thermal impedance 100 [C/W] 10 1 10-3 10-2 10-1 t [sec.] 100 101