ESAC25(C,N,D) (10A) (200V to 400V / 10A)
FAST RECOVERY DIODE Outline drawings, mm
Features
High voltage by mesa design
High reliability
Applications
High speed switching
Maximum ratings and characteristics
Absolute maximum ratings
Item
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
Average output current
Surge current
Operating junction temperature
Storage temperature
Symbol
VRRM
VRSM
IO
IFSM
Tj
Tstg
Conditions
70
-40 to +150
-40 to +150
Unit
V
V
A
A
°C
°C
Electrical characteristics (Ta=25°C Unless otherwise specified )
Item
Forward voltage drop
Reverse current
Reverse recovery time
Thermal resistance
Symbol
VFM
IRRM
t rr
Rth(j-c)
Conditions
IFM=2.5A
VR=VRRM
IF=0.1A, IR=0.1A
Junction to case
Max.
1.3
50
0.4
3.0*
Unit
V
µA
µs
°C/W
Square wave, duty=1/2, Tc=106°C
Sine wave 10ms
Rating
-02 -04
200 400
250 450
10*
Connection diagram
*Average forward current of centertap full wave connection
ESAC25- C
ESAC25- N
ESAC25- D
1
1
1
2
2
2
3
3
3
JEDEC TO-220AB
EIAJ SC-46
10+0.5
0Ø3.6±0.2
5.08
2.54
0.8
1.2
6.4±0.2
15±0.2
3.7±0.2
14 0
-0.5
2.7±0.1
4.5±0.2
1.32
2.7
0.4
ESAC25(C,N,D)(10A)
(200V to 400V / 10A )
Characteristics
Forward characteristics
VF [V]
Reverse characteristics
VR [V]
IF
[A] IR
[µA]
Surge capability
IFSM
[A]
Forward power dissipation
Io [A]
WF
[W]
0 100 200 300 400 500
0 1 2 3 4 5 6
300
100
50
30
10
10
5
3
1
0.5
0.1 0 0.4 0.6 0.8 1.0 1.2 1.4 1.6
300
100
30
10
3
1
0.3
0.1
0.05
Junction capacitance characteristics
Cj
[pF]
VR [V] [time] (at 50Hz)
Output current-case temperature
12
10
8
6
4
2
0
Tc
[°C]
0 2 4 6 8 10 12
Io [A]
140
120
100
80
60
40
100
50
30
10
5
3
5 10 30 50 100 1 3 5 10 30
Transient thermal impedance
[°C/W]
t [sec.]
ESAC25(C,N,D)(10A)
(200V to 400V / 10A )
10-3 10-2 10-1 100 101
100
10
1
