ISL9V5036S3ST - ON SEMICONDUCTOR

October-2017, Rev. 3

Publication Order Number:

ISL9V5036S3S/D

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Device Maximu m Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units

BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 390 V

BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V

ESCIS25 At Starting TJ = 25°C, ISCIS = 38.5A, L = 670 µHy 500 mJ

ESCIS150 At Starting TJ = 150°C, ISCIS = 30A, L = 670 µHy 300 mJ

IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 46 A

IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 31 A

VGEM Gate to Emitter Voltage Continuous ±10 V

PDPower Dissipation Total TC = 25°C 250 W

Power Dissipation Derating TC > 25°C 1.67 W/°C

TJOperating Junction Temperature Range -40 to 175 °C

TSTG Storage Junction Temperature Range -40 to 175 °C

TLMax Lead Tem p for Soldering (Leads at 1.6mm from Case for 10s) 300 °C

Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C

ESD Electrostatic Discharge Voltage at 100pF, 1500Ω4kV

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

EcoSPARK 500mJ , 360V, N-Channel Ignition IGBT

General Description

The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next

generation IGBTs that offer outstanding SCIS capability in the D²-

Pak (TO-263) and TO-220 plastic package. These devices are

intended for use in automotive ignition circuits, specifically as coil

drivers. Internal diodes provide voltage clamping without the need

for external components.

devices can be custom made to specific clamp

voltages. Contact your nearest ON Semiconductor sales

office for more information.

Formerly Developmental Type 49 443

Applications

• Automotive Ignition Coil Driver Circuits

• Coil-On Plug Applications

Features

• Industry Standard D2-Pak package

• SCIS Energy = 500mJ at TJ = 25oC

•Logic Level Gate Drive

Package

COLLECTOR

(FLANGE)

GATE

COLLECTOR

EMITTER

Symbol

D²-Pak

JEDEC TO-263AB JEDEC TO-220AB

COLLECTOR

(FLANGE)

JEDEC TO-262AA

• Qualified to AEC Q101

• RoHS Compliant

EcoSPARK®

www.onsemi.com

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Package Marking and Ordering Information

Electrical Characteristics TA = 25°C unless otherwise noted

Off State Characteristics

On State Characteristics

Dynamic Characteristics

Switching Characteristics

Thermal Ch ara cteris t ics

Device Marking Device Pac kage Reel Size Tape Width Quantity

V5036S ISL9V5036S3ST TO-263AB 330mm 24mm 800

V5036P ISL9V5036P3 TO-220AA Tube N/A 50

V5036S ISL9V5036S3 TO-262AA Tube N/A 50

V5036S ISL9V5036S3S TO-263AB Tube N/A 50

Symbol P arameter Test Conditions Min Typ Max Units

BVCERCollector to Emitter Breakdown Voltage IC = 2mA, VGE = 0,

RG = 1KΩ, See Fig. 15

TJ = -40 to 150°C

330 360 390 V

BVCESCollector to Emitter Breakdown Voltage IC = 10mA, VGE = 0,

RG = 0, See Fig. 15

TJ = -40 to 150°C

360 390 420 V

BVECSEmitter to Collector Breakdown Voltage IC = -75mA, VGE = 0V,

TC = 25°C 30 - - V

BVGESGate to Emitter Breakdown Voltage IGES = ± 2mA ±12 ±14 - V

ICERCollector to Emitter Leakage Current VCER = 250V,

RG = 1KΩ,

See Fig. 11

TC = 25°C- - 25 µA

TC = 150°C- - 1 mA

IECSEmitter to Collector Leakage Current VEC = 24V, See

Fig. 11 TC = 25°C- - 1 mA

TC = 150°C- - 40 mA

R1Series Gate Resistance - 75 - Ω

R2Gate to Emitter Resistance 10K - 30K Ω

VCE(SAT) Collector to Emitter Saturation Voltage IC = 10A,

VGE = 4.0V TC = 25°C,

See Fig. 4 - 1.17 1.60 V

VCE(SAT) Collector to Emitter Saturation Voltage IC = 15A,

VGE = 4.5V TC = 150°C - 1.50 1.80 V

QG(ON) Gate Charge IC = 10A, VCE = 12V,

VGE = 5V, See Fig. 14 -32-nC

VGE(TH) Gate to Emitter Threshold Voltage IC = 1.0mA,

VCE = VGE,

See Fig. 10

TC = 25°C1.3 - 2.2 V

TC = 150°C0.75- 1.8V

VGEPGate to Emitter Plateau Voltage IC = 10A, VCE = 12V - 3.0 - V

td(ON)R Current Tu rn-On Delay Time-Resistive VCE = 14V, RL = 1Ω,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

-0.74µs

trR Current Rise Time-Resistive - 2.1 7 µs

td(OFF)L Current Turn-Off Delay Time-Inductive VCE = 300V, L = 2mH,

VGE = 5V, RG = 1KΩ

TJ = 25°C, See Fig. 12

- 10.8 15 µs

tfL Current Fall Time-Inductive - 2.8 15 µs

SCIS Self Clamped Inductive Switching TJ = 25°C, L = 670 µH,

RG = 1KΩ, VGE = 5V, See

Fig. 1 & 2

- - 500 mJ

RθJC Thermal Resist ance Junction-Case TO-263, TO-220, TO-262 - - 0.6 °C/W

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Typical Characteristics

Figure 1. Self Clamped Inductive Switching

Current vs Time in Clamp Figure 2. Self Clamped Inductive Switching

Current vs Inductance

Figure 3. Collector to Emitter On-State Voltage vs

Junction Tem peratu r e Figure 4.Colle ctor to Emitte r On-State Volta ge vs

Junction Temperature

Figure 5. Collector Current vs Collector to Emitter

On-State Voltage Figure 6. Collector Current vs Collector to Emitter

On-State Voltage

tCLP, TIME IN CLAMP (µS)

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

0350300025010050 150 200

TJ = 25°C

RG = 1KΩ, VGE = 5V,Vdd = 14V

SCIS Curves valid for Vclamp Voltages of <390V

TJ = 150°C

ISCIS, INDUCTIVE SWITCHING CURRENT (A)

0102468

L, INDUCTANCE (mHy)

TJ = 150°C

RG = 1KΩ, VGE = 5V,Vdd = 14V

TJ = 25°C

SCIS Curves valid for Vclamp Voltages of <390V

1.10

1.05

1.00

0.95

0.90

25-25 17512575-50 0 50 100 150

TJ, JUNCTION TEMPERATURE (°C)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

VGE = 4.0V

VGE = 3.7V

VGE = 5.0V

VGE = 8.0V

ICE = 6A

VGE = 4.5V

0.85 25-25 17512575-50 0 50 100 150

1.25

1.20

1.15

1.10

1.05

VCE, COLLECTOR TO EM ITTER VOLTAGE (V)

1.00

TJ, JUNCTION TEMPERATURE (°C)

ICE = 10A

VGE = 4.0V

VGE = 3.7V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMIT TER VOLTAGE (V)

02.01.0 3.0 4.0

VGE = 4.0V

VGE = 3.7V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

TJ = - 40°C

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

02.01.0 3.0 4.0

VGE = 4.0V

VGE = 3.7V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

TJ = 25°C

www.onsemi.com

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Figure 7. Collector to Emitter On-State Voltage vs

Collector Current Figure 8. Transfer Characteristics

Figure 9. DC Collector Current vs Case

Temperature Figure 10. Threshold Voltage vs Junction

Temperature

Figure 11. Leakage Current vs Junction

Temperature Figure 12. Switching Time vs Junction

Temperature

Typical Characteristics (Continued)

ICE, COLLECTOR TO EMITTER CURRENT (A)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

02.01.0 3.0 4.0

TJ = 175°C

VGE = 4.0V

VGE = 3.7V

VGE = 4.5V

VGE = 5.0V

VGE = 8.0V

ICE, COLLECTOR TO EMITT ER CURRENT (A)

VGE, GATE TO EMITTER VOLTAGE (V)

2.01.0 3.0 4.0

02.51.5 3.5 4.5

PULSE DURATION = 250µs

DUTY CYCLE < 0.5%, VCE = 5V

TJ = 25°C

TJ = 175°C

TJ = -40°C

ICE, DC COLLECTOR CURRENT (A)

TC, CASE TEMPERATURE (°C)

25 1751257550 100 150

VGE = 4.0V

17550 100

2.0

1.8

1.6

1.4

1.0

VTH, THRESHOLD VOLTAGE (V)

TJ, JUNCTION TEMPERATURE (°C)

1500 125

1.2

VCE = VGE

ICE = 1mA

-50 7525-25

LEAKAGE CURRENT (µ A)

TJ, JUNCTION TEMPERATURE (°C)

1000

0.1

10000

100

25-25 17512575-50 0 50 100 150

VECS = 24V

VCES = 300V

VCES = 250V

25 1751257550 100 150

TJ, JUNCTION TEMPERATURE (°C)

SWITCHING TIME (µS)

ICE = 6.5A, VGE = 5V, RG = 1KΩResistive tOFF

Inductive tOFF

Resistive tON

www.onsemi.com

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Figure 13. Capacitance vs Collector to Emitter

Voltage Figure 14. Gate Charge

Figure 15. Breakdown Voltage vs Series Gate Resistance

Figure 16. IGBT Normalized Transient Therm al Impe danc e, Junc tion to Case

Typical Characteristics (Continued)

C, CAPACITANCE (pF)

VCE, COLLECTOR TO EMITTER VOLTAGE (V)

3000

1000

500

1500

0105 152025

CIES

FREQUENCY = 1 MHz

COES

CRES

2500

2000

QG, GATE CHARGE (nC)

VGE, GATE TO EMITTER VOLTAGE (V)

01020304050

IG(REF) = 1mA, RL = 0.6Ω, TJ = 25°C

VCE = 6V

VCE = 12V

BVCER, BREAKDOWN VOLTAGE (V)

RG, SERIES GATE RESI STANCE (kΩ)

360

352

348

356

10 20001000 3000

344

100

354

350

358

346

TJ = - 40°C

TJ = 25°C

TJ = 175°C

ICER = 10mA

342

340

ZthJC, NORMALIZED THERMAL RESPONSE

T1, RECTANGULAR PULSE DURATION (s)

100

10-2

10-1

10-2

10-3

10-4

10-5 10-1

10-6

DUTY FACTOR, D = t

/ t

PEAK T

= (P

X Z

X R

) + T

0.5

0.2

0.1

0.05

0.02

0.01

SINGLE PUL SE

10-3

10-4

www.onsemi.com

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

Test Circuits and Waveforms

Figure 17. Inductive Switching Test Circuit Figure 18. tON and tOFF Switching Test Circuit

Figure 19. Energy Test Circuit Figure 20. Energy Waveforms

VCE

PULSE

GEN DUT RG = 1KΩ+

VCE

DUT

LOAD

VGS

0.01Ω

IAS

VCE

VDD

DUT

VARY tP TO OBTAIN

REQUIRED PEAK IAS

VDD

VCE

BVCES

IAS

tAV

www.onsemi.com

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

SPICE Thermal Model

REV 1 May 20 02

ISL9V5036S3S / ISL9V3536P3 / ISL9V5036S3

CTHERM1 th 6 4.0e2

CTHERM2 6 5 3.6e-3

CTHERM3 5 4 4.9e-2

CTHERM4 4 3 3.2e-1

CTHERM5 3 2 3.0e-1

CTHERM6 2 tl 1.6e-2

RTHERM1 th 6 1.0e-2

RTHERM2 6 5 1.4e-1

RTHERM3 5 4 1.0e-1

RTHERM4 4 3 9.0e-2

RTHERM5 3 2 9.4e-2

RTHERM6 2 tl 1.9e-2

SABER Thermal Model

SABER thermal model

ISL9V5036S3S / ISL9V5036P3 / ISL9V5036S3

template thermal_model th tl

therma l _c th, tl

{

ctherm.ctherm1 th 6 = 4.0e2

ctherm.ctherm2 6 5 = 3.6e-3

ctherm.ctherm3 5 4 = 4.9e-2

ctherm.ctherm4 4 3 = 3.2e-1

ctherm.ctherm5 3 2 = 3.0e-1

ctherm.cthe rm6 2 tl = 1.6e -2

rtherm. rtherm1 th 6 = 1.0e-2

rtherm. rtherm2 6 5 = 1.4e-1

rtherm. rtherm3 5 4 = 1.0e-1

rtherm. rtherm4 4 3 = 9.0e-2

rtherm. rtherm5 3 2 = 9.4e-2

rtherm. rtherm6 2 tl = 1. 9e-2

}

RTHERM4

RTHERM6

RTHERM5

RTHERM3

RTHERM2

RTHERM1

CTHERM4

CTHERM6

CTHERM5

CTHERM3

CTHERM2

CTHERM1

th JUNCTION

CASE

www.onsemi.com

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.

ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent

coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.

ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,

regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or

specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer

application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not

designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification

in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized

application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and

expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such

claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This

literature is subject to all applicable copyright laws and is not for resale in any manner.

PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

www.onsemi.com

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your local

Sales Representative

❖