Document Number: 88524 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Glass Passivated Junction Rectifier
1N5624GP thru 1N5627GP
Vishay General Semiconductor
FEATURES
Superectifier structure for high reliability
application
Cavity-free glass-passivated junction
Low forward voltage drop
Low leakage current
High forward surge capability
Meets environmental standard MIL-S-19500
Solder dip 275 °C max. 10 s, per JESD 22-B106
AEC-Q101 qualified
Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in general purpose rectification of power supplies,
inverters, converters and freewheeling diodes application.
MECHANICAL DATA
Case: DO-201AD, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
Note
(1) JEDEC registered values
PRIMARY CHARACTERISTICS
IF(AV) 3.0 A
VRRM 200 V to 800 V
IFSM 125 A
IR5.0 μA
VF0.95 V
TJ max. 175 °C
DO-201AD
SUPERECTIFIER
®
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) (1)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum repetitive peak reverse voltage VRRM 200 400 600 800 V
Maximum DC blocking voltage VDC 200 400 600 800 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 70 °C IF(AV) 3.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load IFSM 125 A
Maximum full load reverse current, full cycle average
0.375" (9.5 mm) lead length at TA = 70 °C IR(AV) 200 μA
Operating junction and storage temperature range TJ, TSTG - 65 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 88524
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Revision: 15-Mar-11
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Notes
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
(2) JEDEC registered values
Note
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
Note
(1) AEC-Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve Fig. 2 - Maximum Non-repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Maximum instantaneous
forward voltage 3.0 A
TA = 25 °C
VF (1)(2) 1.0
V
TA = 70 °C 0.95
Maximum DC reverse current
at rated DC blocking voltage
TA = 25 °C
IR
5.0
μA
TA = 150 °C 300 200
Typical reverse recovery time IF = 0.5 A, IR = 1.0 A,
Irr = 0.25 A trr 3.0 μs
Typical junction capacitance 4.0 V, 1 MHz CJ40 pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL 1N5624GP 1N5625GP 1N5626GP 1N5627GP UNIT
Typical thermal resistance RJA (1) 20 °C/W
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
1N5626GP-E3/54 1.28 54 1400 13" diameter paper tape and reel
1N5626GP-E3/73 1.28 73 1000 Ammo pack packaging
1N5626GPHE3/54 (1) 1.28 54 1400 13" diameter paper tape and reel
1N5626GPHE3/73 (1) 1.28 73 1000 Ammo pack packaging
0
250 50 75 100 125 150 175
4.0
3.0
1.0
2.0
Ambient Temperature (°C)
Average Forward Rectied Current (A)
60 Hz
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
1000
100
10
110100
Number of Cycles at 60 Hz
Average Forward Current (A)
TJ = TJ Max.
8.3 ms Single Half Sine-Wave
Document Number: 88524 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 15-Mar-11 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
10
100
1
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 25 °C
Pulse Width = 300 μs
1 % Duty Cycle
10040 6020080
0.01
0.1
1
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (μA)
T
J
= 125 °C
T
J
= 25 °C
T
J
= 75 °C
Reverse Voltage (V)
Junction Capacitance (pF)
100101
100
10
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
DO-201AD
0.210 (5.3)
0.190 (4.8)
DIA.
0.052 (1.32)
0.048 (1.22)
DIA.
1.0 (25.4)
MIN.
1.0 (25.4)
MIN.
0.375 (9.5)
0.285 (7.2)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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