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TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor

TIP29 / TIP29A / TIP29C Rev. 1.1.0

November 2014

TIP29 / TIP29A / TIP29C

NPN Epitaxial Silicon Transistor

Features

• Medium Power Linear Switching Applications

• Complementary to TIP30 Series

Ordering Information

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.

Part Number Top Mark Package Packing Method

TIP29 TIP29 TO-220 3L (Single Gauge) Bulk

TIP29A TIP29A TO-220 3L (Single Gauge) Bulk

TIP29C TIP29C TO-220 3L (Single Gauge) Bulk

TIP29CTU TIP29C TO-220 3L (Single Gauge) Rail

Symbol Parameter Value Unit

VCBO Collector-Base Voltage TIP29 40 VTIP29A 60

TIP29C 100

VCEO Collector-Emitter Voltage TIP29 40 VTIP29A 60

TIP29C 100

VEBO Emitter-Base Voltage 5 V

ICCollector Current (DC) 1 A

ICP Collector Current (Pulse) 3 A

IBBase Current 0.4 A

TJJunction Temperat ure 150 °C

TSTG Storage Temperature Range -65 to 150 °C

1.Base 2.Collector 3.Emitter

1TO-220

TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor

TIP29 / TIP29A / TIP29C Rev. 1.1.0 2

Thermal Characteristics

Values are at TC = 25°C unless otherwise noted.

Electrical Characteristics

Values are at TC = 25°C unless otherwise noted.

Note:

1. Pulse test: pw ≤ 300 μs, duty cycle ≤ 2%.

Symbol Parameter Value Unit

PC Collector Dissipation (TA = 25°C) 2 W

Collector Dissipation (TC = 25°C) 30

Symbol Parameter Conditions Min. Max. Unit

VCEO(sus) Collector-Emitter Sustaining

Voltage(1)

TIP29 IC = 30 mA, IB = 0 40 V TIP29A 60

TIP29C 100

ICEO Collector Cut-Off Current TIP29 /

TIP29A VCE = 30 V, IB = 00.3

TIP29C VCE = 60 V, IB = 00.3

ICES Collector Cut-Off Current TIP29 VCE = 40 V, VEB = 0 200

μA TIP29A VCE = 60 V, VEB = 0 200

TIP29C VCE = 100 V, VEB = 0 200

IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 1.0 mA

hFE DC Current Gain(1) VCE = 4 V, IC = 0.2 A 40

VCE = 4 V, IC = 1 A 15 75

VCE(sat) Collector-Emitter Saturation Voltage(1) IC = 1 A, IB = 125 mA 0.7 V

VBE(on) Base-Emitter On Voltage(1) VCE = 4 V, IC = 1 A 1.3 V

fT Current Gain Bandwidth Product VCE = 10 V, IC = 200 mA 3.0 MHz

TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor

TIP29 / TIP29A / TIP29C Rev. 1.1.0 3

Typical Performance Characteristics

Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

Figure 3. Safe Operating Area Figure 4. Power Derating

1 10 100 1000 10000

100

1000 VCE = 4V

hFE, DC CURRENT GAIN

IC[mA], COLLECTOR CURRENT

1 10 100 1000 10000

100

1000

10000 IC/IB = 10

VCE(sat)

VBE(sat)

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

IC[mA], COLLECTOR CURRENT

10 100

0.1

TIP29C VCEO MAX.

TIP29B VCEO MAX.

TIP29A VCEO MA X.

TIP29 VCEO MAX.

IC(MAX) (DC)

IC(MAX) (PULSE)

5ms

1ms

IC[A], COLLECTOR CURRENT

VCE[V], COLLECTOR-EMITTER VOLTAGE

0 25 50 75 100 125 150 175 200

PC[W], POWER DISSIPATION

TC[oC], CASE TEMPERATURE

TIP29 / TIP29A / TIP29C — NPN Epitaxial Silicon Transistor

TIP29 / TIP29A / TIP29C Rev. 1.1.0 4

Physical Dimensions

Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB

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Rev. I72

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