Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 1 of 2
www.SEMICOA.com
2N5109UB
Silicon NPN Transisto
r
Data Sheet
Description
Semicoa Semiconductors offers:
• Screening and processing per MIL-PRF-19500 Appendix E
• JAN level (2N5109UBJ)
• JANTX level (2N5109UBJX)
• JANTXV level (2N5109UBJV)
• JANS level (2N5109UBJS)
• QCI to the applicable level
• 100% die visual inspection per MIL-STD-750 method
2072 for JANTXV and JANS
• Radiation testing (total dose) upon request
Please contact Semicoa for special configurations
www.SEMICOA.com or (714) 979-1900
Applications
• General purpose
• VHF-UHF amplifier transistor
• NPN silicon transistor
Features
• Hermetically sealed Cersot ceramic
• Also available in chip configuration
• Chip geometry 1009
• Reference document:
MIL-PRF-19500/453
Benefits
• Qualification Levels: JAN, JANTX,
JANTXV and JANS
• Radiation testing available
Absolute Maximum Ratings TC = 25°C unless otherwise specified
Parameter Symbol Rating Unit
Collector-Emitter Voltage VCEO 20
Volts
Collector-Base Voltage VCBO 40
Volts
Emitter-Base Voltage VEBO 3
Volts
Collector Current, Continuous IC 400
mA
Power Dissipation, TA = 25°C
Derate linearly above 25°C PT 1
5.71
W
mW/°C
Power Dissipation, TC = 25°C
Derate linearly above 25°C PT 2.9
16.6
W
mW/°C
Thermal Resistance RθJA 175 °C/W
Operating Junction Temperature TJ -65 to +200 °C
Storage Temperature TSTG -65 to +200 °C
Copyright 2002 Semicoa Semiconductors, Inc.
Rev. D 333 McCormick Avenue, Costa Mesa, California 92626 714.979.1900, FAX 714.557.4541 Page 2 of 2
www.SEMICOA.com
2N5109UB
Silicon NPN Transisto
r
Data Sheet
ELECTRICAL CHARACTERISTICS
characteristics specified at TA = 25°C
Off Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Collector-Base Breakdown Voltage V(BR)CBO IC = 100 µA 40
Volts
Collector-Emitter Breakdown Voltage V(BR)CEO I
C = 5 mA 20 Volts
Collector-Emitter Breakdown Voltage V(BR)CER IC = 5 mA, RBE = 10 Ω 40
Volts
Emitter-Base Breakdown Voltage V(BR)EBO IE = 100 µA 3
Volts
Collector-Emitter Cutoff Current ICEO1
ICEO2
VCE = 15 Volts
VCE = 15 Volts, TA = 175°C
20
5
µA
mA
On Characteristics Pulse Test: Pulse Width = 300 µs, Duty Cycle ≤ 2.0%
Parameter Symbol Test Conditions Min Typ Max Units
DC Current Gain
hFE1
hFE2
IC = 50 mA, VCE = 15 Volts
IC = 50 mA, VCE = 5 Volts
TA = -55°C
40
15
150
Collector-Emitter Saturation Voltage VCEsat I
C = 100 mA, IB = 10 mA 0.5 Volts
Dynamic Characteristics
Parameter Symbol Test Conditions Min Typ Max Units
Magnitude – Common Emitter, Short
Circuit Forward Current Transfer Ratio
|hFE1|
|hFE2|
|hFE3|
VCE = 15 Volts, f = 200 MHz,
IC = 25 mA
IC = 50 mA
IC = 100 mA
5
6
5
10.0
11.0
10.5
Open Circuit Output Capacitance COBO VCB = 5 Volts, IE = 0 mA,
100 kHZ < f < 1 MHz 3.5 pF
Power Gain (narrow band) current GPE VCC = 15 Volts, IC = 50 mA,
f = 200 MHz, Pin = -10 dB 11
dB
Cross Modulation cm VCC = 15 Volts, IC = 50 mA,
54 dB output -57 dB
Noise Figure NF VCC = 15 Volts, IC = 10 mA,
f = 200 MHz, Pin = -10 dB 3.5 dB
Voltage Gain (wideband) G
VCC = 15 Volts, IC = 50 mA,
50 MHz < f < 216 MHz,
Pin = -10dB
11 dB