ZVN4525Z Green N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features V(BR)DSS RDS(ON) ID TA = +25C 250V 8.5 @ VGS = 10V 240mA Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Lead-Free Finish; RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Mechanical Data Power Management Functions Battery Operated Systems and Solid-State Relays Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc Case: SOT89 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin Finish Annealed over Copper Lead frame. Solderable per MIL-STD-202, Method 208 Weight: 0.052 grams (Approximate) D SOT89 G S Equivalent Circuit Pin-out Top View Top View Ordering Information (Note 4) Part Number ZVN4525ZTA Notes: Compliance Standard Case SOT89 Quantity per Reel 1,000 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information N52 ZVN4525Z Document number: DS33384 Rev. 3 - 2 N52 = Marking Code 1 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage Gate-Source Voltage Value 250 40 Unit V V 240 192 mA IS 1.1 A IDM 1.44 1.44 A A VDSS VGSS Steady State Continuous Drain Current, VGS = 10V TA = +25C (Note 5) TA = +70C (Note 5) ID Maximum Body Diode Forward Current Pulsed Drain Current (Note 7) Pulsed Source Current (Note 7) ISM Thermal Characteristics Characteristic Symbol Total Power Dissipation Linear Derating Factor Thermal Resistance, Junction to Ambient TA = +25C (Note 5) PD Steady State (Note 5) Steady State (Note 6) RJA Operating and Storage Temperature Range TJ, TSTG Value Unit 1.2 9.6 103 50 -55 to +150 W mW/C C/W C/W C Electrical Characteristics (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 250 285 VGS = 0V, ID = 1mA IDSS 35 500 V Zero Gate Voltage Drain Current nA VDS = 250V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage IGSS 1 100 nA VGS = 40V, VDS = 0V VGS(TH) 0.8 1.4 1.8 V VDS = VGS, ID = 1mA 5.6 5.9 8.5 9.0 VGS = 4.5V, ID = 360mA 6.4 9.5 0.3 475 0.97 V VGS = 2.4V, ID = 20mA VGS = 0V, IS = 360mA S VDS = 10V, ID = 0.3A 72 pF 3.65 0.28 VDS = 25V, VGS = 0V f = 1.0MHz nC VDS = 25V, ID = 360mA, VGS = 10V ns VDD = 50V, RG = 6.0, ID= 200mA, RD = 4.4 ns nC IF = 360mA, dI/dt = 100A/s Static Drain-Source On-Resistance (Note 8) RDS(ON) Diode Forward Voltage (Note 8) VSD Forward Transconductance (Note 10) DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance gfs Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Gate-Source Charge Qg Qgs Qgd 11 3.6 2.6 0.2 0.5 1.25 1.70 11.40 3.50 186 34 Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: tD(ON) tR tD(OFF) tF tRR QRR VGS = 10V, ID = 500mA 0.70 260 48 5. For a device surface mounted on 25mm X 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air condition. 6. For a device surface mounted on FR4 PCB measured at t 5 secs. 7. Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal. 8. Measured under pulsed conditions. Width=300s. Duty cycle 2%. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. ZVN4525Z Document number: DS33384 Rev. 3 - 2 2 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z ZVN4525Z Document number: DS33384 Rev. 3 - 2 3 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z ZVN4525Z Document number: DS33384 Rev. 3 - 2 4 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z ZVN4525Z Document number: DS33384 Rev. 3 - 2 5 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. D1 0 .20 c R0 H E B1 L B e D2 8 (4 X) H1 E2 A L1 D SOT89 Dim Min Max Typ A 1.40 1.60 1.50 B 0.50 0.62 0.56 B1 0.42 0.54 0.48 c 0.35 0.43 0.38 D 4.40 4.60 4.50 D1 1.62 1.83 1.733 D2 1.61 1.81 1.71 E 2.40 2.60 2.50 E2 2.05 2.35 2.20 e 1.50 H 3.95 4.25 4.10 H1 2.63 2.93 2.78 L 0.90 1.20 1.05 L1 0.427 REF Z 0.30 REF All Dimensions in mm z Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X2 Dimensions Y1 Y4 X Y C G X X1 X2 Y Y1 Y2 Y3 Y4 Y3 G Y2 Value (in mm) 1.500 0.244 0.580 0.760 1.933 1.730 3.030 1.500 0.770 4.530 X1 C ZVN4525Z Document number: DS33384 Rev. 3 - 2 6 of 7 www.diodes.com April 2015 (c) Diodes Incorporated ZVN4525Z IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2015, Diodes Incorporated www.diodes.com ZVN4525Z Document number: DS33384 Rev. 3 - 2 7 of 7 www.diodes.com April 2015 (c) Diodes Incorporated