© 2000 IXYS All rights reserved 1 - 4
IGBT Modules
Short Circuit SOA Capability
Square RBSOA
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
Symbol Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 1200 V
VCGR TJ= 25°C to 150°C; RGE = 20 kW1200 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C 180 A
IC80 TC= 80°C 120 A
ICM TC= 80°C, tp = 1 ms 240 A
tSC VGE = ±15 V, VCE = VCES, TJ = 125°C10ms
(SCSOA) RG= 10 W, non repetitive
RBSOA VGE= ±15 V, TJ = 125°C, RG = 10 WICM = 200 A
Clamped inductive load, L = 100 mHV
CEK < VCES
Ptot TC= 25°C 760 W
TJ150 °C
Tstg -40 ... +150 °C
VISOL 50/60 Hz, RMS t = 1 min 4000 V~
IISOL £ 1 mA t = 1 s 4800 V~
Insulating material: Al2O3
MdMounting torque (module) 2.25-2.75 Nm
20-25 lb.in.
(teminals) 2.5-3.7 Nm
22-33 lb.in.
dSCreepage distance on surface 10 mm
dAStrike distance through air 9.6 mm
aMax. allowable acceleration 5 0 m/s2
Weight Typical 250 g
8.8 oz.
Data according to a single IGBT/FRED unless otherwise stated.
8
9
1231110
10
11
9
8
2
1
3
MII
2
1
3
10
11
MID
2
1
3
9
8
MDI
E 72873
IC25 = 180 A
VCES = 1200 V
VCE(sat) typ. = 2.2 V
Features
●NPT IGBT technology
●low saturation voltage
●low switching losses
●switching frequency up to 30 kHz
●square RBSOA, no latch up
●high short circuit capability
●positive temperature coefficient for
easy parallelling
●MOS input, voltage controlled
●ultra fast free wheeling diodes
●package with DCB ceramic base plate
●isolation voltage 4800 V
●UL registered E72873
Advantages
●space and weight savings
●reduced protection circuits
Typical Applications
●AC and DC motor control
●AC servo and robot drives
●power supplies
●welding inverters
030
© 2000 IXYS All rights reserved 2 - 4
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
Symbol Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V(BR)CES VGE = 0 V 1200 V
VGE(th) IC = 4 mA, VCE = VGE 4.5 6.5 V
ICES VCE = VCES TJ = 25°C 7.5 mA
TJ = 125°C11mA
IGES VCE = 0 V, VGE = ±20 V ±400 nA
VCE(sat) IC = 100 A, VGE = 15 V 2.2 2.7 V
Cies 6.6 nF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 1 nF
Cres 0.44 nF
td(on) 100 ns
tr70 ns
td(off) 500 ns
tf70 ns
Eon 15 mJ
Eoff 11.5 mJ
RthJC 0.17 K/W
RthJS with heatsink compound 0.33 K/W
Reverse Diode (FRED) Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VFIF = 100 A, VGE = 0 V, 2.3 2.5 V
IF = 100 A, VGE = 0 V, TJ = 125°C 1.8 1.9 V
IFTC = 25°C 200 A
TC = 80°C 130 A
IRM IF = 100 A, VGE = 0 V, -diF/dt = 800 A/ms80A
trr TJ = 125°C, VR = 600 V 200 ns
RthJC 0.33 K/W
RthJS with heatsink compound 0.66 K/W
Inductive load, TJ = 125°C
IC = 100 A, VGE = ±15 V
VCE = 600 V, RG = 10 W
Dimensions in mm (1 mm = 0.0394")
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V0 = 1.5 V; R0 = 10.2 mW
Free Wheeling Diode (typ. at TJ = 125°C)
V0 = 1.3 V; R0 = 5.5 mW
Thermal Response
IGBT (typ.)
Cth1 = 0.27 J/K; Rth1 = 0.163 K/W
Cth2 = 0.63 J/K; Rth2 = 0.004 K/W
Free Wheeling Diode (typ.)
Cth1 = 0.19 J/K; Rth1 = 0.326 K/W
Cth2 = 0.36 J/K; Rth2 = 0.007 K/W
© 2000 IXYS All rights reserved 3 - 4
0 200 400 600 800 1000
0
40
80
120
0
100
200
300
01234
0
50
100
150
200
250
300
350
0.0 0.5 1.0 1.5 2.0 2.5 3.0
0
50
100
150
200
250
0 100 200 300 400 500
0
5
10
15
20
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
0
50
100
150
200
250
13V
11V
TJ = 25°C VGE=17V
TJ = 125°C
VCE = 600V
IC = 100A
15V
567891011
0
50
100
150
200
250
13V
11V
VGE=17V
15V
VCE = 20V
TJ = 25°C
9V 9V
VCE
V
A
IC
VCE
A
IC
V
V
V
VGE VF
A
IC
A
IF
nC
QG-di/dt
V
VGE
A
IRM trr
ns
A/
m
s
150-12
TJ = 125°C
VR = 600V
IF = 100A
TJ = 25° C
TJ = 125°C
IRM
trr
Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics
Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of
free wheeling diode
Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of
free wheeling diode
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
© 2000 IXYS All rights reserved 4 - 4
Fig. 7 Typ. turn on energy and switching Fig. 8 Typ. turn off energy and switching
times versus collector current times versus collector current
Fig. 9 Typ. turn on energy and switching Fig.10 Typ. turn off energy and switching
times versus gate resistor times versus gate resistor
Fig. 11 Reverse biased safe operating area Fig. 12 Typ. transient thermal impedance
RBSOA
0 50 100 150 200
0
20
40
60
0
40
80
120
0 50 100 150 200
0
10
20
30
0
200
400
600
0.00001 0.0001 0.001 0.01 0.1 1
0.00001
0.0001
0.001
0.01
0.1
1
0 8 16 24 32 40 48 56
0
5
10
15
20
0
400
800
1200
1600
0 8 16 24 32 40 48 56
0
10
20
30
40
50
0
50
100
150
200
250
single pu ls e
VCE = 600V
VGE = ±15V
RG = 10
W
TJ = 125°C
150-12
VCE = 60 0V
VGE = ±15V
IC = 100A
TJ = 125°C
0 200 400 600 800 1000 1200
0
40
80
120
160
200
240
RG = 10
W
TJ = 125°C
VCEK < VCES
VCE = 600V
VGE = ±15V
RG = 10
W
TJ = 125°C
Eon
VCE = 600V
VGE = ±1 5 V
IC = 10 0A
TJ = 125°C
td(on)
tr
Eoff
td(off)
tf
Eon
td(on)
trEoff
td(off)
tf
IC
AIC
A
mJ
Eoff
mJ
Eon
ns
t
ns
t
RG
W
RG
W
VCE ts
mJ
Eon
mJ
Eoff
ns
t
ns
t
ICM
K/W
ZthJC IGBT
diode
V
A
MII 150-12 A4 MID 150-12 A4
MDI 150-12 A4
