AON6500 30V N-Channel AlphaMOS General Description Product Summary * Latest Trench Power AlphaMOS (MOS LV) technology * Very Low RDS(on) at 4.5VGS * Low Gate Charge * High Current Capability * RoHS and Halogen-Free Compliant VDS ID (at VGS=10V) 30V 200A RDS(ON) (at VGS=10V) < 0.95m RDS(ON) (at VGS = 4.5V) < 1.3m 100% UIS Tested Applications * DC/DC Converters in Computing, Servers, and POL * Isolated DC/DC Converters in Telecom and Industrial * See Note I 100% Rg Tested DFN5X6 Top View D Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25C Pulsed Drain Current C Continuous Drain Current TA=25C 20 V A 151 IDM 450 71 IDSM TA=70C Units V 200 ID TC=100C Maximum 30 A 57 Avalanche Current C IAS 50 A Avalanche energy L=0.1mH C EAS 125 mJ VDS Spike VSPIKE 36 V Power Dissipation B 100ns TC=25C PD TC=100C TA=25C Power Dissipation A Junction and Storage Temperature Range Rev 1: September 2017 7.3 Steady-State Steady-State RJA RJC W 4.7 TJ, TSTG Symbol t 10s W 33 PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 83 -55 to 150 Typ 14 40 1 www.aosmd.com C Max 17 55 1.5 Units C/W C/W C/W Page 1 of 6 AON6500 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250A, VGS=0V Gate-Body leakage current VDS=0V, VGS= 20V Gate Threshold Voltage VDS=VGS, ID=250A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge Qgd tD(on) 100 nA 1.4 2 V 0.75 0.95 1.1 1.4 1 1.3 m 1 V 100 A 100 0.7 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=20A 0.5 m S 7036 VGS=0V, VDS=15V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A 5 1 Units V 1 TJ=55C IGSS Max 30 VDS=30V, VGS=0V VGS(th) Coss Typ pF 2778 pF 353 pF 1.1 1.7 107 145 nC 49.7 68 nC 11.7 nC Gate Drain Charge 21.4 nC Turn-On DelayTime 12.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 12.8 ns 68.5 ns tf Turn-Off Fall Time 28.8 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/s 31 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s 106 ns nC VGS=10V, VDS=15V, RL=0.75, RGEN=3 A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 1: September 2017 www.aosmd.com Page 2 of 6 AON6500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V 80 VDS=5V 80 3V 2.5V 10V 60 ID(A) ID (A) 60 125C 40 40 25C 20 20 VGS=2V 0 0 0 1 2 3 4 1.0 5 2.0 Normalized On-Resistance RDS(ON) (m) 2.0 2.5 3.0 1.6 1.5 VGS=4.5V 1.0 0.5 VGS=10V 0.0 VGS=10V ID=20A 1.4 1.2 VGS=4.5V ID=20A 1 0.8 0 5 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 2 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) 1.00E+02 ID=20A 1.00E+01 1.5 1.00E+00 125C 125C 1.00E-01 IS (A) RDS(ON) (m) 1.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 25C 1.00E-02 1.00E-03 25C 0.5 1.00E-04 1.00E-05 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 1: September 2017 www.aosmd.com 0 0.2 0.4 0.6 0.8 1 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6500 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 10000 VDS=15V ID=20A 9000 Ciss 8000 Capacitance (pF) VGS (Volts) 8 6 4 2 7000 6000 5000 4000 3000 Coss 2000 1000 0 Crss 0 0 20 40 60 80 100 120 0 Qg (nC) Figure 7: Gate-Charge Characteristics 10s 100s 1ms 1.0 25 30 TJ(Max)=150C TC=25C 300 200 100 TJ(Max)=150C TC=25C 0.0 0.01 0.1 1 10 100 0 0.0001 VDS (Volts) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-to-Case (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance 20 400 10s Power (W) ID (Amps) RDS(ON) limited DC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZJC.RJC 1 15 500 10.0 0.1 10 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 100.0 5 RJC=1.5C/W PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 1: September 2017 www.aosmd.com Page 4 of 6 AON6500 100 250 80 200 Current rating ID(A) Power Dissipation (W) TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 40 20 150 100 50 0 0 0 25 50 75 100 125 150 0 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 0.00001 0.001 0.1 10 1000 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note H) ZJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJA=55C/W 0.1 PD 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 Ton 1 T 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev 1: September 2017 www.aosmd.com Page 5 of 6 AON6500 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev 1: September 2017 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6