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TO SHIBA Diode Silicon Epit ax ial Planar Type
1SS301
Ultra High Speed Switching Applications
AEC-Q101 Qualified (Note1)
Small package : SC-70
Low forward voltage : VF (3) = 0.90 V (typ.)
Fast reverse recovery time : trr = 1.6 ns (typ.)
Small total capacitance : CT = 0.9 pF (typ.)
Note1: For detail information, please contact to our sales.
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage VRM 85 V
Reverse voltage VR 80 V
Maximum (peak) forward current IFM 300* mA
Average forward current IO 100* mA
Surge current (10 ms) IFSM 2* A
Power dissipation P 100 mW
Junction temperature Tj 125 °C
Storage temperature Tstg -55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estima ted fail ur e rat e, etc).
*: Unit rating. Total rating = unit rating × 1.5
Unit
: mm
JEDEC
JEITA SC-70
TOSHIBA 1-2P1B
Weight: 0.006 g (typ.)
Start of commercial production
1986-11
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Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage
VF (1) IF = 1 mA 0.60
V
VF (2) IF = 10 mA 0.72
VF (3) IF = 100 mA 0.90 1.20
Reverse current IR (1) VR = 30 V 0.1
μA
IR (2) VR = 80 V 0.5
Total capacitance CT VR = 0V, f = 1 MHz 0.9 3.0 pF
Reverse recovery tim e trr IF = 10 mA (Fig.1) 1.6 4.0 ns
Marking
Fig.1 Reverse Recovery Time (trr) Test Circuit
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