CYPRESS SEMICONDUCTOR Features e Automatic power-down when deselected e Transparent write (7C161) * CMOS for optimum speed/power High speed 15 ns taa @ Low active power 633 mW Low standby power 220 mW @ TTL compatible inputs and outputs CYPRESS SEMICONDUCTOR CY7C161 CY7C162 e@ Capable of withstanding greater than 2001V electrostatic discharge, Functional Description The CY7C161 and CY7C162 are high- performance CMOS static RAMs orga- nized as 16,384 by 4 bits with separate I/O. Easy memory expansion is provided by ac- tive LOW chip enables (CE, CE,) and three-state drivers. They have an automat- icpower-down feature, reducing the power consumption by 65% when deselected. Writing to the device is accomplished when the chip enable (CE), CE) and write en- able (WE) inputs are both LOW. Data on the four input pins (Ig through I3) is written 16,384 x 4 Static R/;W RAM Separate I/O into the memory location specified on the address pins (Ag through Aj3). Reading the device is accomplished by taking the chip enables (CE;, CE,) LOW while write enable (WE) remains HIGH. Under these conditions the contents of the memory location specified on the address pins will appear on the four data output pins. The output pins stay in high-impedance state when write enable is LOW 7C162 only), or one of the chip enables ts C2) are HIGH. A die coat is used to insure alpha immunity. Logic Block Diagram INPUT BUFFER ROW DECODER SENSE AMPS. PERPEL PE COLUMN DECODER 2 tid DOWN Pin Configurations ber] O162-4 Ri gzrzrre Selection Guidel!! 7C1IG1~15 | 7C16120 | 7C16125 | 7C161-35 | 7C16145 7C162-15 | 7C16220 | 7C16225 | 7C16235 | 7C16245 Maximum Access Time (ns) Maximum Operating Current (mA Maximum Standby Current (mA) Shaded areas indicate advanced information, Note: | 1 20 25 35 45 115 80 70 70 50 40/20 40/20 20/20 20/20 20/20 1, Formilitaryspecifications, see the CY7C161A/CY7C162A datasheet. 2-185 4bE D 254%bbe DOOOBY4? 5 Eacyp IJ4023-10 And SRAMsCYPRESS SEMICONDUCTOR 4BE D EM 258%bb2 OO0b44S 7 EMCYP = T-Yf-Q37V0 CY7C161 SSF SEMICONDUCTOR Maximum Ratings : oe (Above which the useful life may be impaired. Foruserguidelines, Output Currentinto Outputs(LOW) .....cssereeees 20mA nottested.) Static Discharge Voltage ..........cccsceeeeesees >2001V Storage Temperature .......ceeeeeene -65Cto +150C _ (Per MIL-STD-883, Method 3015) Ambient Temperaturewith 50 Latch-UpCurrent .......ccccccccncccescereee >200mA PowerApplied ......0cccnveeseue seeee 7 SSCtO +125C - Oo . ; erating Range Supply Voltage to Ground Potential P g - (Pin 24 to Pin 12)... ..scccvesccesevens 0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature Vee in High ZState ......ccesseecscnceuener 0.5V to +7.0V _ Commercial 0Cto + 70C 5V + 10% DC Input Voltage ...... 0.0. ce eee eens 3.0V to + 7.0V Electrical Characteristics Over the Operating Range : 7C16110 7C16112 7161-15 7C162-10 7C16212 7C0162-15 Parameters Description Test Conditions Min. | Max. | Min. } Max. | Min. | Max. | Units Vou Output HIGH Voltage | Voc = Min., 2.4 24 2.4 Vv . lon = 4.0mA . Vor Output LOW Voltage Vec = Min., 0.4 0.4 0.4 Vv ToL = 8.0 mA Vir Input HIGH Voltage 22 | Veo | 2.22 | Vee | 2.2 | Veco Vv Vu, Input LOW Voltagel2I -05}] 08 |-05] 08 | -30] 08 Vv Ix Input Load Current GND <Vi< Vcc ~10 | +10 | ~10 | +10 | -10 | +10 pA loz Output Leakage GND <V,< Veco 10 | +10 | -10 | +10 | -10 | +10 | pA Current Output Disabled Tas Output Short Vcc = Max, - 350 350 -350| mA CircuitCurrent!3] Vout = GND Icc Voc Operating Voc = Max., 160 160 115 | mA . Supply Current Tour = OmA Tgpi AutomaticCEy Max. Vcc 40 40 40 mA Power-DownCurrent CE, > Vir Min. Duty Cycle = 100% Isp2 Automatic CE; Max. Veo, 20 20 20 mA Power-DownCurrent CE; > Vcc 0.3V, Vin = Vcc 0.3V or Vin <.03V Shaded areas indicate advanced information. 2-186UBE D EM 258%bbe OOOb4s45 9 ECYP CY7C161 7-46-22 3-10 CY7C162 Electrical Characteristics Over the Operating Range(continued) 7CIGL20 =| 7C16125,35 | 7C161-45 7C16220 =| 7C162-25,35 | 7C162~45 Parameters Description Test Conditions Min. | Max. | Min. | Max. | Min. | Max, | Units Vou Output HIGH Voltage | Vcc = Min., 2.4 2.4 2.4 Vv Jon = 4.0mA VoL Output LOW Voltage Vcc = Min., 04 0.4 0.4 v Jor = 8.0mA Vint Input HIGH Voltage 22 | Veo | 2.2 | Veo | 2.2 | Vee Vv Vit Input LOW Voltagel?] -3.0 | 08 | -3.0] 08 | -30} 08 Vv Ix Input Load Current GND < V;< Vcc -10 | +10 | 10 | +10 | -10 | +10 |] vA loz Output Leakage GND < Vi < Vcc, -10 | +10 | ~10 | +10 | -10 | +10 pA Current Output Disabled Tos Output Short Vec = Max., 350 ~ 350 ~350 | mA CircuitCurrentl] Vour = GND Ice Vcc Operating Voc = Max, 80 70 50 | mA Supply Current Tour = OmA Ispr AutomaticCE, Max. Vcc; 40 20 20 | mA Power-DownCurrent CE; > Vor Min. Duty Cycle = 100% Ispa Automatic CE, Max. Vcc, 20 20 20 | mA Power-DownCurrent CE; > Vcc 0.3V, Vin 2 Vcc ~ 0.3V or Vin <0,3V Capacitancel4l Parameters Description Test Conditions Max. Units Cn InputCapacitance Ta = 25C, f=1 MEz, 10 pF Cour OutputCapacitance Voc = 5.0V 10 pF Notes: 2. Vy_min, = -3,0V for pulse durations less than 30 ns. 4, Tested initially and after any design or process changes that may affect 3. Notmore than 1 outputshould be shorted atone time, Duration of the these parameters. short circuit should not exceed 30 seconds. . AC Test Loads and Waveforms Al 481.0. AL 4819, BV Oh 5v ALL INPUT PULSES 3.0 wl lew 30 pF R2 Spr A2 INCLUDING L 255.0, INCLUDING [ 255.0, GND JIGAND WIGAND SCOPE SCOPE (a) (b) C1624 Equivalent to: THEVENIN EQUIVALENT 16722. QUTPUT Om mn 0 1.730 2-187 SRAMs aCYPRESS SEMICONDUCTOR 4bE D Ef 256%bbe oo00b450 5 MMCYP eS CY7C161 i ~ SSF BE Swvctoe 1-Y6-23-/0 TN Switching Characteristics Over the Operating Range! 41 - . 7C161-10 7C161-12 70161-15 7C161~20 . 7C162-10 7C162-12 7016215 716220 Parameters Description Min. | Max, | Min. | Max. | Min. | Max. | Min. | Max. | Units READ CYCLE trc Read Cycle Time 10 12 15 20 ns tAa Address to Data Valid 10 12 15 20 ns toHa Output Hold from AddressChange 3 3 3 s ns tacE CE LOW to Data Valid 10 12 15 20 ns tpog OE LOW to Data Valid 10 12 10 10 ns tLZ0E OE LOW to Low Z 0 0 3 3 ns tHzoE OE HIGH to HighZ 5 T 8 8 ns tLZcE CELOW to Low ZU] 2 3 3 5 ns tazce CEHIGH to High 2/78] 5 i 8 8 ns teu CELOW to Power-Up 0 0 0 0 ns tpp CE HIGH to Power-Down 10 12 15 20 ns WRITE CYCLE)! twce Write Cycle Time 10 12 15 20 ns tscr CELOW to Write End 8 8 12 15 ns taw Address Set-Up to Write End 8 8 12 15 ns tra Address Hold from Write End 0 0 0 0 nS tsa Address Set-Up to Write Start 0 0 0 ns tpwE WE Pulse Width 8 8 12 15 ns tsp Data Set-Up to Write End 5 6 10 10 ns typ Data Hold from Write End 0 0 0 0 ns tLZWE WE HIGH to Low ZI!" (7C162) 2 3 5 5 ns tHzwe WELOW to High Z!7:81 (70162) 6 6 7 7 ns tawE WELOW to Data Valid (7C161) 10 12 15 20 ns tapv Data Valid to Output Valid (7C161) 10 12 15 20 ns tpLE CE LOW to Data Valid 10 12 15 20 ns Shaded areas indicate advanced information. 2-188CYPRESS SEMICONDUCTOR ae CY7C161 =e | _ CY7C162 * SEMICONDUCTOR are I -A3-10 Switching Characteristics Over the Operating Rangel>: 61 7016125 7C161-35 7C16145 7C16225 7C162~35 7C162.-45 Parameters Description Min, | Max, Min. | Max, Min. | Max. Units READ CYCLE tre Read Cycle Time 25 35 45 ns taa Address to Data Valid 25 35 45 os tonHa Output Hold from AddressChange 5 5 5 ns tacE CE LOW to Data Valid 25 35 45 ns toog OE LOW to Data Valid 12 15 20 ns tLZ0E OE LOW to Low Z 3 3 3 ns tHzoE OE HIGH to High Z 10 12 i5 nis tLzce CE LOW to Low ZU] 5 5 5 ns tyzcE CE HIGH to High Z178] 10 15 is. ns tpu CELOW to Power-Up 0 0 0 ns tpp CE HIGH to Power-Down 20 20 25 ns WRITE CYCLE)! twe Write Cycle Time 20 25 40 ns tscE CE LOW to Write End 20 25 30 ns taw Address Set-Up to Write End 20 25 30 ns tya Address Hold from Write End 0 0 0 ns tsa Address Set-Up to Write Start 0 0 0 ns tpwE WE Pulse Width 15 20 20 ns tsp Data Set-Up to Write End 10 15 15 ns typ Data Hold from Write End 0 0 ns tLzwE WE HIGH to Low ZU] (7C162) 5 5 ns tuzwe WE LOW to High Z!78] (70162) 7 10 15 ns taweE WE LOW to Data Valid (7C161) 25 30 35 ns tapv Data Valid to Output Valid (7C161) 20 30 35 ns tpLE CE LOW to Data Valid 25 30 35 ns Notes: 5. Testconditions assume signal transition time of 5 nsor less, timing ref- . tuzceand tyzweare specified with C, = 5 pF asin part (b) of AC Test erence levels of 1.5, input pulse levels of 0 to3.0V, and outputloading Loads. Transition is measured +500 mV from steady state voltage. of the specified IoL/Ion and 30-pF load capacitance. . Theinternal write time of the memory is defined by the overlap of CE, 6. Both CE; and CE are represented by CE in the Switching Character- LOW, CE2 LOW, and WE LOW. Bothsignals must be LOW to initiate istics and Waveforms sections. awrite andeithersignalcanterminateawrite by going HIGH. Thedata 7. Atanygiven temperature and voltage condition, tyz is less than t.z for input set-up and hold timing should be referenced to the rising edge of any given device. 2-189 the signal that terminates the write. WLE D 258%bb2 OOGb4S1 7 Eacyp SRAMs aCYPRESS SEMICONDUCTOR YEE D BM 254%bbe2 OO0b4Se 4 RaCYP =o CY7C161 Ss 5 by 4en 3 CY7 SFP SEMICONDUCTOR 7-96 AS-7O___CVTC162_ Switching Waveforms! Read Cycle No. 1{10 11] tae ADDRESS *K : : x tha { : toua . DATA OUT PREVIOUS DATA VALID XKX DATA VALID C628 Read Cycle No. 210 12] te tac K _ x tace OE ol tpoe > - tHzoe tion >I tyzce HIGH HIGH IMPEDANCE TIT IMPEDANCE DATA OUT oe = Ke DATA VALID Vy # toy e trp oc icc SUPPLY 50% 50% _ CURRENT ISB 162-7 Write Cycle No. 1 (WE Controlled)! ADDRESS CE tpwe WE tsp DATA IN DATA-IN VALID tzwe HIGH IMPEDANCE tuzwe DATA OUT DATA UNDEFINED (7C162) tapv DATA OUT DATA UNDEFINED DATA VALID (76161) 6162-8 Notes: _ =o 10, WE is HIGH for read cycle, 12. Address valid prior to or coincident with CE;, CE, transition LOW. 11. Device is continuously selected, CE), CE2 = Vir. 2-190CYPRESS SEMICONDUCTOR WBE D ES 258%bb2 0006453 0 EACYP | _ CY7C161 awh, _ CY7C162 SREShwucTOR oe 1-76-23 -/0 N Switching Waveforms] (continued) Write Cycle No. 2 (CE Controlled) (9 13] ADDRESS CE SRAMSs a WE = tsp tap DATA IN DATA-IN VALID DATA OUT HIGH [IMPEDANCE . 7 SHZLE > (70162) onACUT XKK aman (70161) XXX DATA VALID C629 Note: _ 13, IfCE goes HIGH simultaneously with WE HIGH, the outputremains ina high-impedance state (7C162 only). Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZED SUPPLY CURRENT OUTPUT SOURCE CURRENT vs, SUPPLY VOLTAGE vs, AMBIENT TEMPERATURE o ys. QUTPUT VOLTAGE 1.2 120 a 212 210 & 100 810 8 clog a a 0.8 5 80 H 0.8 iy o 3 Z 06 Ww 60 = 0.6 = = oS 04 3 40 Zz 04 g @ 02 Isp 0.2[ 'sa z 20 0.0 0.0 3 0 4.0 4.5 5.0 5.5 6.0 25 125 0.0 1.0 2.0 3.0 40 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C} OUTPUT VOLTAGE (V) NORMALIZED ACCESS TIME NORMALIZED ACCESS TIME OUTPUT SINK CURRENT ys, SUPPLY VOLTAGE ys. AMBIENT TEMPERATURE vs. OUTPUT VOLTAGE 1.4 1.6 140 wo = > NORMALIZED tag is OUTPUT SINK CURRENT (mA) = fo ~ om NORMALIZED ta, 60 1.0 i 1.0 | Veo = 5.0V 40 08> 90 0.8 0.6 0 40 45 60 55 60 55 25 125 00 10 20 30 40 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) 2-1914BE D MM 2589662 0006454 2 gacyp CY7C161 TIY6-23-/6 CY7C162 CYPRESS SEMICONDUCTOR " SSS CYPRESS Sa & SEMICONDUCTOR Typical DC and AC Characteristics (continued) TYPICAL POWER-ON CURRENT TYPICAL ACCESS TIME CHANGE ys. SUPPLY VOLTAGE s, OUTPUT LOADING NORMALIZED Ic vs. CYCLE TIME 3.0 30.0 1.25 1 e Voo = 5.0V = on, Ta = 25C 2 3s" 8 Voc = 0.8V 9 20 & 20.0 Q 1.00 qi N qi z 18 Zz 150 z 5 5 5 aa 9 10 9 100 Voc = 4.8V Z 075 a [7 05 5.0 Ta= 26C | 0.0 0.50 00 10 20 30 40 50 0 200 400 600 800 1000 40 20 30 40 SUPPLY VOLTAGE (V) CAPACITANCE (pF) CYCLE FREQUENCY (MHz) Address Designators Address Address Pin Namie Function Number AS X3 1 A6 X4 2 Al X5 3 A8 X6 4 Ad X7 5 Ald YO 6 Ail Y1 7 Al12 YS 8 Al3 Y4 9 AO Y3 23 Al 2 24 A2 X0 25 A3 Xi 26 A4 X2 27 2-192CYPRESS SEMICONDUCTOR HEE D Ml 2589bbe OOOb4YSS 4 ECYP CY7C161 _ CY7C162 1~46-Q3-/0 Ordering Information : Speed Package | Operating Speed Package | Operating (ns) Ordering Code Type Range (ns) Ordering Code Type Range 10 CY7C16110PC. P21 Commercial 10. CY7C16210PC P21 Commercial CY7C16110VC V21 CY7C162-10VC v2i CY7C16110DC D22 CY7C162~10DC D22 CY7C161-10LC L54 CY7C16210LC L54 12 CY7C16112PC Pai Commercial 12 CY7C16212PC P21 Commercial CY7C16112VC Vat CY7C162-12VC V21 CY7C16112DC D22 CY7C16212DC D22_ CY7Ci61-12LC LS4 CY7C162-12LC LS4 15 CY7C16115PC P21 Commercial 15 CY7C16215PC P2L Commercial CY7C161-15VC V21 CY7C16215VC V21 CY7C161-15DC D22 CY7C16215DC D22 CY7C16115LC L54 CY7C162~15LC L54 20 CY7C16120PC P2t Commercial 20 CY7C16220PC P21 Commercial CY7C161-20VC V21 CY7C16220VC V21 CY7C16120DC D22 CY7C162~20DC D22 CY7C161-20LC L54 CY7C16220LC L54 25 CY7C161-25PC P2i Commercial 25 CY7C16225PC P2L Commercial CY7C161-25VC V2i CY7C16225VC V21 CY7C16125DC D22 CY7C16225DC D22 CY7C16125LC L54 CY7C16125LC . L54 35 CY7C16135PC P2i Commercial 35 CY7C16235PC P21 Commercial CY7C16135VC V21 CY7C162--35VC V21 CY7C161-35DC D22. CY7C16235DC D22 CY7C16135LC 154 CY7C162~35LC LS54 45 CY7C16145PC P2t Commercial 45 CY7C16245PC P21 Commercial CY7C161~45VC V21 CY7C16245VC V21 CY7C16145DC D22 CY7C16245DC D22. CY7C16145LC L54 CY7C16245LC L54 Shaded areas indicate advanced information. Document #: 38-00029-G Shaded areas indicate advanced information. 2-193 SRAMs al