FMMT560Q
Document Number: DS37020 Rev. 1 - 2
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FMMT560Q
500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
Description
This Bipolar Junction Transistor (BJT) has been designed to meet the
stringent requirements of Automotive Applications.
Features
BV
CEO
> -500V
I
C
= -150mA high Continuous Collector Current
I
CM
Up to 500mA Peak Pulse Current
Excellent h
FE
Characteristics up to I
C
= 100mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Case: SOT23
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Ordering Information
(Notes 4 & 5)
Product Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
FMMT560QTA Automotive 560 7 8 3,000
FMMT560QTC Automotive 560 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
560 = Product Type Marking Code
C
E
B
Top View
SOT23
Device Symbol Top View
Pin-Out
560
FMMT560Q
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO -500 V
Collector-Emitter Voltage VCEO -500 V
Emitter-Base Voltage VEBO -7 V
Continuous Collector Current IC -150 mA
Peak Pulse Current ICM -500 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 6) PD 500 mW
Thermal Resistance, Junction to Ambient (Note 6) RθJA 250 C/W
Thermal Resistance, Junction to Lead (Note 7) RθJL 194 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
ESD Ratings (Note 8)
Characteristic Symbol Value Unit JEDEC Class
Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A
Electrostatic Discharge - Machine Model ESD MM 400 V C
Notes: 6. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT560Q
Document Number: DS37020 Rev. 1 - 2
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Thermal Characteristics and Derating Information
1 10 100
1m
10m
100m
1
15 x 15mm FR4
1oz Copper
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 0 20 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6
15 x 15mm FR4 1oz Copper
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
40
80
120
160
200
240 15 x 15mm FR4 1oz Copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
100µ 1m 10m 100m 1 10 100 1k
0.1
1
10
100
15 x 15mm FR4 1oz Copper
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
FMMT560Q
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
Collector-Base Breakdown Voltage BVCBO -500 — — V IC = -100µA
Collector-Emitter Breakdown Voltage (Note 9) BVCEO -500 — — V IC = -1mA
Emitter-Base Breakdown Voltage BVEBO -7 — — V IE = -100µA
Collector Cutoff Current ICBO — —
-100 nA
VCB = -500V
Emitter Cutoff Current IEBO — —
-100 nA
VEB = -5V
Static Forward Current Transfer Ratio (Note 9) hFE
100
80
—
—
—
15
300
300
—
—
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
Collector-Emitter Saturation Voltage (Note 9) VCE(sat) — — -200
-500 mV IC = - 20mA, IB = -2mA
IC = - 50mA, IB = -10mA
Base-Emitter Saturation Voltage (Note 9) VBE
(
sat
)
— — -0.9 V
IC = -50mA, IB = -10mA
Base-Emitter Turn-On Voltage (Note 9) VBE
(
on
)
— — -0.9 V
IC = -50mA, VCE = -10V
Output Capacitance Cobo — — 8 pF
VCB = -20V, f = 1MHz
Transition Frequency fT 60 — — MHz
VCE = -20V, IC = -10mA,
f = 50MHz
Turn-On Time ton — 110 — ns
VCE = -100V, IC = -50mA,
IB1 = -5mA, IB2 = 10mA
Turn-Off Time toff — 1.5 — µs
Note: 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
FMMT560Q
Document Number: DS37020 Rev. 1 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
J
K1K
L1
H
L
M
All 7°
A
CB
D
a
FMMT560Q
Document Number: DS37020 Rev. 1 - 2
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FMMT560Q
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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