© 2004 IXYS All rights reserved
VCES = 600 V
IC25 = 75 A
VCE(sat) = 2.7 V
tfi typ = 48 ns
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGE(th) IC= 250 µA, VCE = VGE 3.0 5.0 V
ICES VCE = VCES TJ = 25°C50µA
VGE = 0 V TJ = 150°C1mA
IGES VCE = 0 V, VGE = ±20 V ±100 nA
VCE(sat) IC= 40 A, VGE = 15 V 2.1 2.7 V
TJ = 125°C 1.8 V
Symbol Test Conditions Maximum Ratings
VCES TJ= 25°C to 150°C 600 V
VCGR TJ= 25°C to 150°C; RGE = 1 MΩ600 V
VGES Continuous ±20 V
VGEM Transient ±30 V
IC25 TC= 25°C (limited by leads) 75 A
IC110 TC= 110°C50A
ICM TC= 25°C, 1 ms 300 A
SSOA VGE = 15 V, TVJ = 125°C, RG = 10 Ω ICM = 80 A
(RBSOA) Clamped inductive load @ ≤ 600V
PCTC= 25°C 400 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
MdMounting torque (TO-247) 1.13/10Nm/lb.in.
Weight TO-247 AD 6 g
TO-268 4 g
DS99147(01/04)
G = Gate, C = Collector,
E = Emitter, TAB = Collector
Features
zVery high frequency IGBT
zSquare RBSOA
zHigh current handling capability
zMOS Gate turn-on
- drive simplicity
Applications
zPFC circuits
zUninterruptible power supplies (UPS)
zSwitched-mode and resonant-mode
power supplies
zAC motor speed control
zDC servo and robot drives
zDC choppers
Advantages
zHigh power density
zVery fast switching speeds for high
frequency applications
HiPerFASTTM IGBT IXGH 50N60C2
IXGT 50N60C2
Advance Technical Data
TO-268
(IXGT)
C (TAB)
C (TAB)
GCE
TO-247 AD
(IXGH)
E
G
C2-Class High Speed IGBTs
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N60C2
IXGT 50N60C2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs IC= 40 A; VCE = 10 V, 40 51 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
Cies 3700 pF
Coes VCE = 25 V, VGE = 0 V, f = 1 MHz 230 pF
Cres 50 pF
Qg138 nC
Qge IC = 40 A, VGE = 15 V, VCE = 0.5 VCES 25 nC
Qgc 40 nC
td(on) 18 ns
tri 25 ns
td(off) 115 150 ns
tfi 48 ns
Eoff 0.38 0.7 mJ
td(on) 18 ns
tri 25 ns
Eon 0.45 mJ
td(off) 170 ns
tfi 60 ns
Eoff 0.74 mJ
RthJC 0.31 K/W
RthCK (TO-247) 0.25 K/W
Inductive load, TJ = 25°°
°°
°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2 Ω
Inductive load, TJ = 125°°
°°
°C
IC = 40 A, VGE = 15 V
VCE = 480 V, RG = Roff = 2 Ω
TO-247 AD Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
e
∅ P
TO-268 Outline
Min. Recommended Footprint
(Dimensions in inches and mm)
© 2004 IXYS All rights reserved
IXGH 50N60C2
IXGT 50N60C2
Fig. 2. Extended Output Characte ristics
@ 25 deg. C
0
40
80
120
160
200
240
280
320
012345678910
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
5V
7V
9V
11V
Fig. 3. Output Characteristics
@ 125 Deg. C
0
10
20
30
40
50
60
70
80
0.5 1 1.5 2 2.5 3 3.5 4
V
CE
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
6V
5V
7V
9V
Fig. 1. Output Characteristics
@ 25 Deg. C
0
10
20
30
40
50
60
70
80
0.5 1 1.5 2 2.5 3 3.5 4
V
C E
- Volts
I
C
- Amperes
V
GE
= 15V
13V
11V
7V
5V
6V
9V
Fig. 4. Dependence of V
CE(sat)
on
Temperature
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
25 50 75 100 125 150
T
J
- Degrees Centigrade
V
C E ( s a t )
- Normalized
I
C
= 40A
I
C
= 20A
VGE = 15V
I
C
= 80A
Fig. 5. Collector-to-Em itter Voltage
vs. Gate-to-Emitter voltage
2.4
2.7
3
3.3
3.6
3.9
4.2
4.5
4.8
567891011121314151617
V
G E
- Volts
V
C E
- Volts
T
J
= 25ºC
I
C
= 80A
40A
20A
Fig. 6. Input Adm ittance
0
20
40
60
80
100
120
140
160
180
200
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G E
- Volts
I
C
- Amperes
T
J
= 125ºC
25ºC
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 50N60C2
IXGT 50N60C2
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
Fig. 7. Transconductance
0
10
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160 180 200
I
C
- Amperes
g
f s
- Siemens
T
J = 25ºC
125ºC
Fig. 8. Dependence of Turn-Off
En e r g y o n R
G
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
2.7
3
2 4 6 8 10 12 14 16 18
R
G
- Ohms
E
o f f
- milliJoules
IC = 20A
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 40A
IC = 80A
Fig. 9. Dependence of Turn-Off
En e r g y
on I
c
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
20 30 40 50 60 70 80
I
C
- Amperes
E
o f f
- MilliJoules
RG = 2Ω
RG = 10Ω - - - -
VGE = 15V
VCE = 480V
TJ = 125ºC
TJ = 25ºC
Fig. 10. Dependence of Turn-Off
Energy on Temperature
0
0.3
0.6
0.9
1.2
1.5
1.8
2.1
2.4
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
E
o f f
- milliJoules
IC = 80A
RG = 2Ω
RG = 10Ω - - - -
VGE = 15V
VCE = 480V
IC = 40A
IC = 20A
Fig. 11. Dependence of Turn-Off
Switching Time on R
G
50
100
150
200
250
300
350
400
450
2 4 6 8 10 12 14 16 18
R
G
- Ohms
Switching Time - nanoseconds
IC = 20A
t
d(off)
t
fi
- - - - - -
TJ = 125ºC
VGE = 15V
VCE = 480V
IC = 40A
IC = 80A
Fig. 12. Dependence of Turn-Off
Sw itching Time
on I
c
40
60
80
100
120
140
160
180
200
20 30 40 50 60 70 80
I
C
- Amperes
Switching Time - nanoseconds
t
d(off)
t
fi
- - - - - -
RG = 2Ω
VGE = 15V
VCE = 480V TJ = 125ºC
TJ = 25ºC
© 2004 IXYS All rights reserved
IXGH 50N60C2
IXGT 50N60C2
Fig. 15. Gate Charge
0
2
4
6
8
10
12
14
16
0 30 60 90 120 150
Q
G
- nanoCoulombs
V
G E
- Volts
V
CE
= 300V
I
C
= 40A
I
G
= 10m A
Fig. 16. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
C E
- Volts
Capacitance - picoFarrads
C
ies
C
oes
C
res
f = 1 MHz
Fig. 13. Dependence of Turn-Off
Switching Time on Temperature
20
40
60
80
100
120
140
160
180
200
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
Switching Time - nanoseconds
I
C
= 80A
t
d(off)
t
fi
-
- - - - -
R
G
= 2Ω
V
GE
= 15V
V
CE
= 480V
I
C
= 20A
I
C
= 40A
I
C
= 20A
Fig. 16. Maximum Transient Thermal Resistance
0.00
0.05
0.10
0.15
0.20
0.25
0.30
0.35
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
ºC / W
Fig. 14. Reverse-Bias
Safe Operating Area
0
10
20
30
40
50
60
70
80
90
100
100 200 300 400 500 600
V
C E
- Volts
I
C
- Amperes
T
J
= 125
º
C
R
G
= 10Ω
dV/dT < 10V/ns
