T3035H, T3050H SnubberlessTM high temperature 30 A Triacs Datasheet - production data Description $ Specifically designed to operate at 150 C, the new 30 A T3035H, T3050H Triacs provide very high dynamic performance and enhanced performance in terms of power loss and thermal dissipation. This allows optimizing the heatsink size, leading to space and cost effectiveness when compared to electro-mechanical solutions. * $ $ $ * 72$% $ Based on ST SnubberlessTM technology, they offer a specified minimal commutation and high noise immunity levels valid up to the Tj max. $ $ * The T3035H, T3050H series optimize safely the control of universal motors and of inductive loads found in power tools and major appliances. 72$% ,QVXODWHG By using an internal ceramic pad, the T3035H-6I, T3050H-6I provides voltage insulation (rated at 2500 V rms). Features * High current Triac Table 1. Device summary * High immunity level * Low thermal resistance with clip bounding * RoHS (2002/95/EC) compliant package Order code Package VDRM/VRRM T3035H-6T * Very high commutation (3Q) at 150 C capability IGT IT(RMS) 35 mA TO-220AB T3050H-6T 50 mA 600 V T3035H-6I TO-220AB T3050H-6I insulated * UL certified (ref. file E81734) 30 A 35 mA 50 mA Applications Thanks to its high electrical noise immunity level and its strong current robustness, the T3035H, T3050H series is designed for the control of AC actuators in appliances and industrial systems. TM: Snubberless is a trademark of STMicroelectronics July 2015 This is information on a product in full production. DocID17029 Rev 5 1/9 www.st.com 9 Characteristics 1 T3035H, T3050H Characteristics Table 2. Absolute maximum ratings Symbol Parameter Value Unit 30 A TO-220AB Tc = 121 C TO-220AB insulated Tc = 92 C Non repetitive surge peak on-state current (Full cycle, Tj initial = 25 C) f = 50 Hz t = 20 ms 270 f = 60 Hz t = 16.7ms 284 It value for fusing tp = 10 ms Non repetitive surge peak off-state voltage tp = 10 s dI/dt Critical rate of rise of on-state current IG = 2 x IGT, tr 100 ns IGM Peak gate current IT(RMS) ITSM I t VRSM, VDSM PG(AV) Tstg Tj On-state rms current (Full sine wave) A 487 A s Tj = 25 C VRRM, VDRM +100 V F = 120 Hz Tj = 150 C 50 A/s tp = 20 s Tj = 150 C 4 A Tj = 150 C 1 W Storage junction temperature range - 40 to + 150 C Operating junction temperature range - 40 to + 150 C Average gate power dissipation Table 3. Electrical characteristics (Tj = 25 C, unless otherwise specified) Value Symbol IGT (1) VGT VGD IH (2) Test conditions VD = 12 V RL = 33 VD = VDRM RL = 3.3 k Quadrant Unit dV/dt (2) VD = 67 %VDRM gate open (dI/dt)c (2) Without snubber 50 I - II - III MAX. 1.0 V I - II - III MIN. 0.15 V MAX. 60 75 75 90 90 110 MAX. II mA mA mA Tj = 150 C MIN. 1000 1500 V/s Tj = 150 C MIN. 33 44 A/ms 1. Minimum IGT is guaranted at 20 % of IGT max. 2. For both polarities of A2 referenced to A1 2/9 35 MAX. IT = 500 mA IG = 1.2 IGT T3050H I - II - III I - III IL T3035H DocID17029 Rev 5 T3035H, T3050H Characteristics Table 4. Static characteristics Symbol VTM (1) Vto (1) Rd (1) Test conditions ITM = 42 A tp = 380 s Unit Tj = 25 C MAX. 1.55 V Threshold voltage Tj = 150 C MAX. 0.85 V Dynamic resistance Tj = 150 C MAX. 15 m 10 A Tj = 25 C VDRM = VRRM IDRM IRRM Value MAX. Tj = 150 C VD/VR = 400V (at peak mains voltage) Tj = 150 C VD/VR = 200V (at peak mains voltage) Tj = 150 C 8.5 mA 7 MAX. 5.5 1. for both polarities of A2 referenced to A1. Table 5. Thermal resistance Symbol Parameter Rth(j-c) Junction to case (AC) Rth(j-a) Junction to ambient Value TO-220AB 0.8 TO-220AB Insul 1.6 TO-220AB / TO-220AB Insul 60 Unit C/W Figure 1. Maximum power dissipation versus rms on-state current (full cycle 180) C/W Figure 2. On-state rms current vs case temperature ,7 506 $ P(W) 40 35 30 72$% 72$%LQ V 25 20 15 10 5 IT(RMS)(A) 0 0 5 15 10 20 25 30 Figure 3. On-state rms current versus ambient temperature (free air convection) ,7 506 $ 7F & Figure 4. Relative variation of thermal impedance versus pulse duration ( . >=WK5WK@ =WK MF =WK MD ( 7D & ( ( DocID17029 Rev 5 WS V ( ( ( ( ( ( 3/9 Characteristics T3035H, T3050H Figure 5. Relative variation of gate trigger current and gate trigger voltage versus junction temperature ,*79*7>7M@,*79*7>7M &@ 7\SLFDOYDOXH ,*74 Figure 6. Relative variation of holding current and latching current vs junction temperature (typical value) ,*744 ,+,/>7M@,+,/>7M &@ 9 *7 ,/ 444 ,+ 7 M & 7M & Figure 7. Surge peak on-state current vs number of cycles Figure 8. Non repetitive surge peak on-state current for a sinusoidal pulse ,760 $ ,760 $ ,W $V GOGWOLPLWDWLRQ $V 7MLQLWLDO & W PV 2QHF\ FOH 1RQUHSHWLWLYH 7M LQLWLDO & , 760 ,W 5HSHWLWLYH 7& & ZLGWK W S PV DQGFRUUHVSRQGLQJYDOXHRI,W 1XPEHURIF\FOHV Figure 9. On state characteristics (maximum values) 1000 W PV Figure 10. Relative variation of critical rate of decrease of main current verus junction temperature ITM(A) 11 (dI/dt)C[Tj]/(dI/dt)C[Tj = 150 C] 10 9 8 100 7 TJ max: Vto = 0.85 V Rd = 15 m 6 5 4 10 3 2 Tj = 150 C Tj = 25 C 0 4/9 1 1 VTM(V) 1 2 3 4 5 0 25 DocID17029 Rev 5 Tj(C) 50 75 100 125 150 T3035H, T3050H Characteristics Figure 11. Relative variation of static dV/dt immunity vs junction temperature 11 Figure 12. Relative variation of leakage current vs junction temperature for different values of blocking voltage dV/dt[Tj]/dV/dt[Tj = 150 C] 1.0E+00 VD = VR = 400 V 10 IDRM/IRRM[Tj;VDRM/VRRM]/IDRM/IRRM [Tj = 150 C; 600 V] 9 VDRM = VRRM = 600 V 1.0E-01 8 7 VDRM = VRRM = 400 V 6 1.0E-02 5 VDRM = VRRM = 200 V 4 3 1.0E-03 2 1 Tj(C) 0 Tj(C) 1.0E-04 25 50 75 100 125 150 25 50 75 100 125 150 Figure 13. Acceptable junction to ambient thermal resistance versus repetitive peak off-state voltage and ambient temperature 5 WK MD &: 9'50 9'50 9550 9 9550 9 9 '50 9 550 9 YROWDJHDQGDPELHQWWHPSHUDWXUH 7D & DocID17029 Rev 5 5/9 Package information 2 T3035H, T3050H Package information * Epoxy meets UL94, V0 * Lead-free package * Recommended torque: 0.4 to 0.6 N*m In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 2.1 TO-220AB (insulated and non-insulated) package information Figure 14. TO-220AB (insulated and non-insulated ) dimension definitions C B OI b2 L F A I4 l3 c2 a1 l2 a2 M b1 e 6/9 DocID17029 Rev 5 c1 T3035H, T3050H Package information Table 6. TO-220AB package mechanical data Dimensions Ref. Millimeters Min. A Typ. 15.20 a1 Inches Max. Min. 15.90 0.598 3.75 Typ. Max. 0.625 0.147 a2 13.00 14.00 0.511 0.551 B 10.00 10.40 0.393 0.409 b1 0.61 0.88 0.024 0.034 b2 1.23 1.32 0.048 0.051 C 4.40 4.60 0.173 0.181 c1 0.49 0.70 0.019 0.027 c2 2.40 2.72 0.094 0.107 e 2.40 2.70 0.094 0.106 F 6.20 6.60 0.244 0.259 OI 3.75 3.85 0.147 0.151 I4 15.80 16.80 0.622 L 2.65 2.95 0.104 0.116 l2 1.14 1.70 0.044 0.066 l3 1.14 1.70 0.044 0.066 M 16.40 2.60 0.646 0.661 0.102 DocID17029 Rev 5 7/9 Ordering information 3 T3035H, T3050H Ordering information Figure 15. Ordering information scheme 7+ 7 7ULDFVHULHV &XUUHQW $ 6HQVLWLYLW\ P$ P$ +LJK 7HPSHUDWXUH 9ROWDJH 9 3DFNDJH 7 72$% , 72$%LQV Table 7. Ordering information Order code Marking T3035H-6T T3035H 6T T3050H-6T T3050H 6T T3035H-6I T3035H 6I T3050H-6I T3050H 6I Package Weight Base qty Delivery mode 2.3 g 50 Tube TO-220AB 4 TO-220AB Insulated Revision history Table 8. Document revision history 8/9 Date Revision Changes 28-Jan-2010 1 Initial release. 17-May-2010 2 Updated maximum Tj in Table 2. 14-Dec-2010 3 Updated IGT in Table 1. 20-Sep-2011 4 Updated: Features. 21-Jul-2015 5 Update Table 2 and reformatted to current standard. DocID17029 Rev 5 T3035H, T3050H IMPORTANT NOTICE - PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST's terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers' products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. (c) 2015 STMicroelectronics - All rights reserved DocID17029 Rev 5 9/9