Ol DE 3875081 oo1uryo7 1 a 3875081 G E SOLID STATE O1E 17407) D Fi Bs -yy General-Purpose Power Transistors 2N5885, 2N5886 File Number 1041 High-Current, High Power, TERMINAL DESIGNATIONS High-Speed N-P-N E (FLANGED Power Transistors Features: Specification for hee and Vce [sat] up to 25 A = Current gain bandwidth product fr = 4 MHz [min.] at TA = Low saturation voltage with high beta JEDEC TO-204AA " High dissipation capability 92CS-27516 The RCA-2N5885 and 2N5886 are epitaxial-base, silicon n-p-n transistors intended for a wide variety of high-power, high-current applications, such as power-switching cir- cuits, driver and output stages for series and shunt regula- tors, dce-to-de converters, inverters, and solenoid (ham- mer)/relay drivers, These devices differ in maximum voltage ratings. They are supplied in the JEDEC TO-204AA hermatic steal packages. MAXIMUM RATINGS, Absolute-Maximum Values: 2N5885 2N5886 VCHO vcs etenvecereesetereceseteteersteeateteenene 60 80 Vv Vceo(sus) 60 80 Vv *Veso 5 Vv lowseveees 25 A lem 50 A Va seeee 7.6 A Tao ees cece eens eter cetera eae net reat ennetttereaiene 15 A Py - At Tg S 25C ccc cece tes eu cer acesretnecenese 200 WwW At Te > 25C vices eeu es cree ace Derate linaarly 1.15 W/C. ______.___.._..._____. $68 Figs. 1 and 2 ee "Tita Tacs ce reece cece er tenen rere eet eeeneerenenenee 5 tt 200 LS Th At distance 21/92 In, (0.8 mm) from seating plane for 10 max. .............4. 230 C * In accordance with JEDEC registration data format JS-6 ROF-1. On 41 _ Ol DE pserscas o017408 3 [ 3875081 G E SOLID STATE O1 17408 O 7~SBR-( General-Purpose Power Transistors '2N5885, 2N5886 ELECTRICAL CHARACTERISTICS, At Case Temperature (Te) = 25C Unless Otherwise Specified TEST CONDITIONS LIMITS CHARAC- VOLTAGE | CURRENT TERISTIC Vide Ade 2N5885 2N5886 UNITS Vce | Vee j 'c tg | Min. | Max. | Min. | Max. . 608 - 1 - - Iceo 808 - - - 1 Lf *T] 60 -1.5 _ 1 ~ : CEX 80 | -1.5 - - - t . mA {CEX 60 | -15 = 10 _ = Tg = 160C 80 | -1.6 - ~ - 10 . 30 - 2 _ ~ IcEO 40 - - - 2 "lego -5 = 1 = 4 gb 35 ~ 35 ~ "Ih 4 10 20 | 100 | 20 | 100 FE . 4 25b 4 - 4 - * | Vceolsus) 0.2 60 - 80 - Vee 4 10 = 7.5 = 15 *|Vpelsat) 25> |6.25]} | 25 - | 25 y . i> } 156 | - 1 - 1 Veelsat) 25> | 6.25 _ 4 _ Isfo tp=ts 20 10 - 10 - A nonrep. * | [Pte _ _ ft MHe 10 1 4 4 . hfe _ . _ te kHe 4 3 20 20 { . Cobo a _ _ - ee 10 500 500 pF "lt, (See Fig.8) | ys 10 i - 0.7 - 0.7 "It ss wo | 1 | - 1 - 1 Bs lt 1o | 1 - 0.8 - 0.8 Rese 20 5 [0875 | | 0.875 | C/w *In accordance with JEDEC registration data format JS-6 ROF-1. aVog. bputsed; pulse duration = 300 ys, duty factor = 1.8%. 1, 7 eg OL DE p3a7soa. oo17409 5 i 3875081 GE SOLID STATE O1E 17409 0 T3215 General-Purpose Power Transistors 2N5885, 2N5886 #25 MUST BE LINEARLY WITH INCREASE IN TEMPERATURE) Vogo (MAX.}#60V pe VcEo(MAX )=2 8OV < 1 oO g 5 > 3 e % w a 2 2 4 66 2 4 66 2 4 64 I lo to00 COLLECTOR- TO- EMITTER VOLTAGE (Vc pl- 92cS-29046 Fig. 1 Maximum operating areas for 2N5885 end 2N5886, TO- EMITTER VOLTAGE AND gp ~LIMiTED PORTION OF MAXIMUM - OPERATING AREA-CURVES 00 NOT DERATE THE SPECIFIED WALUE ey FOR Ig MAX wPe5, TG; oN AT To = 25C OR PERCENTAGE OF RATED CURRENT AT SPECIFIED VOLTAGE CASE TEMPERATURE (To}*C or J oC too ares-29798 COLLECTOR CURRENT (Le }a secs-oueas Fig. 2 Derating curves for 2N5885 and 2N5886. Fig. 3 Typical de beta characteristics as a func: tion of collector current for 2N5885 and 2N5886. COLLECTOR-TO-EMITTER VOLTAGE (Vee}94 COLLECTOR CURRENT (I)A e z we ir = 3 3S 3S re o 3 o COLLECTOR-TO-EMITTER SATURATION VOLTAGE [vce ton]-v TO EMITTER VOLTAGE(VgeI-V 9205-29647 328-29849 Fig, 4 Typical saturation voltage characteristics for Fig. 5 Typical transfer characteristics for 2N5885 and 2N5886. 2N5885 and 2N&836. ] | i OL DE 38750481 oo174io 4 T he . 2N5885; 2N5886 Ie/Tgrt0 CASE TEMPERATURE (Te}* 25C COLLECTOR CURRENT (I)A Fig. 6 Typical delay-time and rise-time characteristics as a function of collector curcent for 2N5885 and 2N5886. 414 3875081 GE SOLID STATE General-Purpose Power Iransisiors O1E 17410. 00 0 COLLECTOR CURRENT (Ic)4 32cs- 29207 9408-29203 Fig. 7 Typical storage-time and fall-time characteristics as a function of collector current for 2N5885 and 2N58&8&6. +1IV-+s, OSCILLOSCOPE, 0 TRaNsisTOR tr $ 20 ns -2y UNDER Zz 10K INPUT PULSE Test te 2008 BW. 410 10 1000 1 oc12% {a} OSCLLOSCOPE, transistor = $ 20ne EI Z>IOK INPUT_PULSE evr eSe 0: COLLECTOR -BASE D100E PW. #10 TO 100 ps OF ans282 oc 2% Vaas-4V tb} 92C$- 29804 Fig. 8 Equivalent test circuits for rise-time (a) and fall-time and storage-time (b} measurements for 2N5885 and 2N5886, oT: 3315