CLA40P1200FC High Efficiency Thyristor VRRM = 2x 1200 V I TAV = 40 A VT = 1.19 V Phase leg Part number CLA40P1200FC Backside: isolated 2 1 4 5 3 Features / Advantages: Applications: Package: i4-Pac Thyristor for line frequency Planar passivated chip Long-term stability Line rectifying 50/60 Hz Softstart AC motor control DC Motor control Power converter AC power control Lighting and temperature control Isolation Voltage: 3000 V~ Industry convenient outline RoHS compliant Epoxy meets UL 94V-0 Soldering pins for PCB mounting Backside: DCB ceramic Reduced weight Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20120830b CLA40P1200FC Ratings Thyristor Conditions Symbol V RSM/DSM Definition max. non-repetitive reverse/forward blocking voltage TVJ = 25C max. 1300 Unit V V RRM/DRM max. repetitive reverse/forward blocking voltage TVJ = 25C 1200 V I R/D reverse current, drain current VR/D = 1200 V TVJ = 25C 50 A VR/D = 1200 V TVJ = 125C 4 mA VT IT = forward voltage drop IT = 80 A IT = 40 A IT = 80 A average forward current TC = 95C I T(RMS) RMS forward current 180 sine VT0 threshold voltage rT slope resistance R thJC thermal resistance junction to case TVJ = 125 C for power loss calculation only R thCH thermal resistance case to heatsink Ptot total power dissipation I TSM max. forward surge current value for fusing CJ junction capacitance PGM max. gate power dissipation typ. TVJ = 25C 40 A I TAV It min. average gate power dissipation (di/dt) cr critical rate of rise of current V V 1.19 V 1.50 V T VJ = 150 C 40 A 63 A TVJ = 150 C 0.86 V 7.9 m 0.8 K/W K/W 0.20 TC = 25C 150 W t = 10 ms; (50 Hz), sine TVJ = 45C 650 A t = 8,3 ms; (60 Hz), sine VR = 0 V 700 A t = 10 ms; (50 Hz), sine TVJ = 150 C 555 A t = 8,3 ms; (60 Hz), sine VR = 0 V 595 A t = 10 ms; (50 Hz), sine TVJ = 45C 2.12 kAs t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 2.04 kAs TVJ = 150 C 1.54 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V f = 1 MHz TVJ = 25C t P = 30 s T C = 150 C 1.48 kAs 25 t P = 300 s PGAV 1.25 1.49 TVJ = 150C; f = 50 Hz repetitive, IT = 120 A pF 10 W 5 W 0.5 W 150 A/s t P = 200 s; di G /dt = 0.3 A/s; IG = 0.3 A; VD = VDRM non-repet., I T = 40 A 500 A/s (dv/dt) cr critical rate of rise of voltage TVJ = 150C VGT gate trigger voltage VD = 6 V TVJ = 25 C 1.5 TVJ = -40 C 1.6 V I GT gate trigger current VD = 6 V TVJ = 25 C 50 mA TVJ = -40 C 80 mA TVJ = 150 C 0.2 V 3 mA TVJ = 25 C 125 mA VD = VDRM 1000 V/s R GK = ; method 1 (linear voltage rise) VGD gate non-trigger voltage I GD gate non-trigger current IL latching current VD = VDRM t p = 10 s IG = 0.3 A; di G /dt = V 0.3 A/s IH holding current VD = 6 V R GK = TVJ = 25 C 100 mA t gd gate controlled delay time VD = 1/2 VDRM TVJ = 25 C 2 s tq turn-off time VR = 100 V; I T = 40 A; VD = VDRM TVJ = 150 C IG = 0.3 A; di G /dt = 0.3 A/s di/dt = 10 A/s; dv/dt = IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 200 s 20 V/s; t p = 200 s Data according to IEC 60747and per semiconductor unless otherwise specified 20120830b CLA40P1200FC Package Ratings i4-Pac Symbol I RMS Definition Conditions RMS current per terminal Tstg storage temperature T VJ virtual junction temperature min. typ. max. 70 Unit A -55 150 C -40 150 C Weight FC 9 20 mounting force with clip d Spp/App d Spb/Apb VISOL Product Marking UL listed Date Code Ordering Standard Part Number CLA40P1200FC Equivalent Circuits for Simulation V0 mm 5.1 mm 3000 V 2500 V R0 50/60 Hz, RMS; IISOL 1 mA C L A 40 P 1200 FC Part No. I 1.7 Part number IXYS Logo Marking on Product CLA40P1200FC * on die level = = = = = = = Thyristor (SCR) High Efficiency Thyristor (up to 1200V) Current Rating [A] Phase leg Reverse Voltage [V] i4-Pac (5) Delivery Mode Tube Quantity 25 Code No. 510210 T VJ = 150C Thyristor V 0 max threshold voltage 0.86 V R 0 max slope resistance * 5.4 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved N terminal to backside t = 1 second t = 1 minute 120 terminal to terminal creepage distance on surface | striking distance through air isolation voltage g Data according to IEC 60747and per semiconductor unless otherwise specified 20120830b CLA40P1200FC Outlines i4-Pac D2 A A2 E1 L L1 D D3 D1 R Q E 4x e c 1 2 3 4 5 4x b2 5x b A1 2 IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 1 4 5 A A1 A2 b b2 b4 c D D1 D2 D3 E E1 e L L1 Q R W Millimeter min max 4.83 5.21 2.59 3.00 1.17 2.16 1.14 1.40 1.47 1.73 2.54 2.79 0.51 0.74 20.80 21.34 14.99 15.75 1.65 2.03 20.30 20.70 19.56 20.29 16.76 17.53 3.81 BSC 19.81 21.34 2.11 2.59 5.33 6.20 4.57 2.54 0.10 - Inches min max 0.190 0.205 0.102 0.118 0.046 0.085 0.045 0.055 0.058 0.068 0.100 0.110 0.020 0.029 0.819 0.840 0.590 0.620 0.065 0.080 0.799 0.815 0.770 0.799 0.660 0.690 0.150 BSC 0.780 0.840 0.083 0.102 0.210 0.244 0.100 0.180 0.004 - Die konvexe Form des Substrates ist typ. < 0.05 mm uber der Kunststoffoberflache der Bauteilunterseite The convexbow of substrate is typ. < 0.05 mm over plastic surface level ofdevice bottom side b4 W Dim. 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20120830b CLA40P1200FC Thyristor 150 600 120 500 IT 90 ITSM 400 [A] 60 10000 TVJ = 45C 2 TVJ = 125C [A2s] 50 Hz, 80% VRRM 1.0 1.5 2.0 2.5 0.01 100 0.1 VT [V] 1 1 Fig. 3 I t versus time (1-10 s) 1000 80 70 2: IGT, TVJ = 25C 3: IGT, TVJ = -40C 1 50 tgd ITAVM [ s] [A] 40 6 [V] 4 5 10 lim. 10000 10 typ. 1 10 0.1 1000 0 100 1000 0 T RthHA 0.6 0.8 1.0 2.0 4.0 8.0 40 dc = 1 0.5 0.4 0.33 0.17 0.08 [W] 20 80 120 160 Tcase [C] Fig. 5 Gate controlled delay time tgd Fig. 4 Gate voltage & gate current 30 40 IG [A] IG [mA] P(AV) 30 20 4: PGAV = 0.5 W 5: PGM = 1 W 6: PGM = 10 W 100 dc = 1 0.5 0.4 0.33 0.17 0.08 60 TVJ = 125C 100 23 10 4 5 6 7 8 910 t [ms] 1: IGD, TVJ = 150C 1 3 2 Fig. 2 Surge overload current ITSM: crest value, t: duration 10 1 2 t [s] Fig. 1 Forward characteristics VG TVJ = 125C 200 100 0.5 1000 TVJ = 125C TVJ = 25C 0 0.0 TVJ = 45C It [A] 300 30 VR = 0 V Fig. 6 Max. forward current at case temperature 0.8 0.6 ZthJC 0.4 i Rthi (K/W) 1 0.01 2 005 3 0.17 4 0.36 5 0.21 [K/W] 10 0.2 0 ti (s) 0.0004 0.009 0.014 0.05 0.36 0.0 0 10 20 30 IF(AV) [A] 0 40 80 120 160 Fig. 7a Power dissipation versus direct output current Fig. 7b and ambient temperature IXYS reserves the right to change limits, conditions and dimensions. (c) 2012 IXYS all rights reserved 1 10 100 1000 10000 t [ms] Tamb [C] Fig. 8 Transient thermal impedance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20120830b