KVR16LR11S4/8HB
8GB 1Rx4 1G x 72-Bit PC3L-12800
CL11 Registered w/Parity 240-Pin DIMM
DESCRIPTION
This document describes ValueRAM's 1G x 72-bit (8GB)
DDR3L-1600 CL11 SDRAM (Synchronous DRAM), low voltage,
registered w/parity, 1Rx4 ECC, memory module, based on
eightenn 1G x 4-bit FBGA components. The SPD is pro-
grammed to JEDEC standard latency DDR3-1600 timing of
11-11-11 at 1.35V and 1.5V. This 240-pin DIMM uses gold
contact fingers. The electrical and mechanical specifications
are as follows:
FEATURES
•JEDEC standard 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~
1.575V) Power Supply
•VDDQ = 1.35V (1.28V ~ 1.45V) and 1.5V (1.425V ~ 1.575V)
•800MHz fCK for 1600Mb/sec/pin
•8 independent internal bank
•Programmable CAS Latency: 11, 10, 9, 8, 7, 6
•Programmable Additive Latency: 0, CL - 2, or CL - 1 clock
•8-bit pre-fetch
•Burst Length: 8 (Interleave without any limit, sequential with
starting address “000” only), 4 with tCCD = 4 which does not
allow seamless read or write [either on the fly using A12 or
MRS]
•Bi-directional Differential Data Strobe
•Internal(self) calibration : Internal self calibration through ZQ
pin (RZQ : 240 ohm ± 1%)
•On Die Termination using ODT pin
•On-DIMM thermal sensor (Grade B)
•Average Refresh Period 7.8us at lower than TCASE 85°C,
3.9us at 85°C < TCASE < 95°C
•Asynchronous Reset
•PCB : Height 1.180” (30.00mm), double sided component
Document No. VALUE R A M 1 4 5 2 - 0 0 1 . A 0 0 10/24/14 Page 1
Memory Module Specifi cations
SPECIFICATIONS
selcyc 11)DDI(LC
Row Cycle Time (tRCmin) 48.125ns (min.)
Refresh to Active/Refresh 260ns (min.)
Command Time (tRFCmin)
Row Active Time (tRASmin) 35ns (min.)
Maximum Operating Power (1.35V) = 3.950 W*
0 - V 49gnitaR LU
Operating Temperature 0o C to 85o C
Storage Temperature -55o C to +100o C
Continued >>
SDRAM SUPPORTED
Hynix (B-Die)
MODULE DIMENSIONS:
Document No. VALUERAM1452-001.A00 Page 2
