MGA-87563
0.5–4 GHz 3 V Low Current
GaAs MMIC LNA
Data Sheet
Features
• Lead-free Option Available
• Ultra-Miniature Package
• 1.6 dB Min. Noise Figure at 2.4 GHz
• 12.5 dB Gain at 2.4 GHz
• Single +3 V or 5 V Supply, 4.5 mA Current
Applications
• LNA or Gain Stage for PCS, ISM, Cellular, and GPS
Applications
Pin Connections and Package Marking
Surface Mount SOT-363 (SC-70) Package
MGA-87563 Pkg
Note:
Package marking provides orientation and identification.
"87" = Device Code
"x" = Date code character identifies month of manufacture
Equivalent Circuit
OUTPUT
GND
V
dd
87x
GND
GND
INPUT
1
2
3
6
5
4
RF
INPUT
V
dd
RF
OUTPUT
GROUND
3
1, 2, 5
4
6
Attention:
Observe precautions for handling electrostatic
sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge
Damage and Control.
Description
Avago’s MGA-87563 is an economical, easy-to-use GaAs
MMIC amplifier that offers low noise and excellent
gain for applications from 0.5 to 4 GHz. Packaged in an
ultra-miniature SOT-363 package, it requires half the
board space of a SOT-143 package.
With the addition of a simple shunt-series inductor at
the input, the device is easily matched to achieve a
noise of 1.6 dB at 2.4 GHz. For 2.4 GHz applications and
above, the output is well matched to 50 Ohms. Below
2 GHz, gain can be increased by using conjugate
matching.
The circuit uses state-of-the-art PHEMT technology
with self-biasing current sources, a source-follower
interstage, resistive feedback, and on-chip impedance
matching networks. A patented, on-chip active bias
circuit allows operation from a single +3 V or +5 V
power supply. Current consumption is only 4.5 mA,
making this part ideal for battery powered designs.
2
Thermal Resistance[2]:
θch-c = 160°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. TC = 25°C (TC is defined to be the
temperature at the package pins where
contact is made to the circuit board).
Absolute Maximum Ratings
Absolute
Symbol Parameter Units Maximum[1]
V
dd Device Voltage, RF V 6
Output to Ground
Vin RF input or RF Output V +0.5
Vout Voltage to Ground –1.0
Pin CW RF Input Power dBm +13
Tch Channel Temperature °C 150
TSTG Storage Temperature °C -65 to 150
MGA-87563 Electrical Specifications[3], TC = 25°C, ZO = 50 Ω, V
dd = 3 V
Symbol Parameters and Test Conditions Units Min. Typ. Max.
Gtest[3] f = 2.0 GHz 11 14
NFtest[3] f = 2.0 GHz 1.8 2.3
NFoOptimum Noise Figure f = 0.9 GHz dB 1.9
(Tuned for lowest noise figure) f = 1.5 GHz 1.6
f = 2.0 GHz 1.6
f = 2.4 GHz 1.6
f = 4.0 GHz 2.0
GaAssociated Gain at NFOf = 0.9 GHz dB 14.6
(Tuned for lowest noise figure) f = 1.5 GHz 14.5
f = 2.0 GHz 14.0
f = 2.4 GHz 12.5
f = 4.0 GHz 10.3
P1dB Output Power at 1 dB Gain Compression f = 0.9 GHz dBm -2.0
f = 1.5 GHz -1.8
f = 2.0 GHz -2.0
f = 2.4 GHz -2.0
f = 4.0 GHz -2.6
IP3Third Order Intercept Point f = 2.4 GHz dBm +8
VSWR Output VSWR f = 2.4 GHz 1.8
Idd Device Current mA 4.5
Note:
3. Guaranteed specifications are 100% tested in the circuit in Figure 10 in the Applications Information section.
3
Figure 7. Input and Output VSWR
(into 50 Ω) vs. Frequency.
Figure 8. 50 Ω Noise Figure and
Associated Gain vs. Frequency.
Figure 9. Device Current vs. Voltage.
Figure 1. Minimum Noise Figure
(Optimum Tuning) vs. Frequency and
Temperature.
Figure 2. Associated Gain (Optimum
Tuning) vs. Frequency and
Temperature.
Figure 4. Minimum Noise Figure
(Optimum Tuning) vs. Frequency and
Voltage.
MGA-87563 Typical Performance, TC = 25°C, Vdd = 3 V
NOISE FIGURE (dB)
0.5
0
FREQUENCY (GHz)
2.0
5
2
1
4.0
4
3.0
1.0 1.5 2.5 3.5
2.7 V
3.0 V
3.3 V
3
Figure 5. Associated Gain (Optimum
Tuning) vs. Frequency and Voltage.
Figure 6. Output Power for 1 dB Gain
Compression (into 50 Ω) vs.
Frequency and Voltage.
Figure 3. Output Power for 1 dB Gain
Compression (into 50 Ω) vs.
Frequency and Temperature.
NOISE FIGURE (dB)
0.5
0
FREQUENCY (GHz)
2.0
5
2
1
4.0
4
3.0
1.0
+25
3
1.5 2.5 3.5
+85
-40
ASSOCIATED GAIN (dB)
0.5
0
FREQUENCY (GHz)
2.0
20
5
4.0
15
3.0
1.5
+25
+85
10
-40
1.0 2.5 3.5
P 1 dB (dBm)
0.5
-5
FREQUENCY (GHz)
2.0
0
-3
-4
4.0
-1
3.0
1.0 1.5 2.5 3.5
+85
+25
-40
-2
ASSOCIATED GAIN (dB)
0.5
0
FREQUENCY (GHz)
2.0
20
5
4.0
15
3.0
1.5
3.0 V
2.7 V
10
3.3 V
1.0 2.5 3.5
P 1dB (dBm)
0.5
-5
FREQUENCY (GHz)
2.0
0
-4
4.0
-2
3.0
1.5
3.0 V
2.7 V
-3
3.3 V
-1
1.0 2.5 3.5
VSWR (n:1)
0.5
1.0
FREQUENCY (GHz)
3.0
4.0
1.5
3.0
4.0
1.0
2.5
3.5
2.0
2.0
INPUT
OUTPUT
1.5 3.52.5
NOISE FIGURE (dB)
0.5
1.0
FREQUENCY (GHz)
3.0
5.0
1.5
4.0
3.5
1.5
3.0
4.5
2.5
2.0
ASSOCIATED GAIN (dB)
4.0
2.0
0
20
10
15
5
Ga 50
NF 50
NF OPT
1.0 2.5 3.5
CURRENT (mA)
0
0
VOLTAGE (V)
3
6
1
5
4
4
1
3
5
2
2
+85
+50
+25
0
-40
4
MGA-87563 Typical Noise Parameters[4], TC = 25°C,
ZO = 50 Ω, V
dd = 3 V
Frequency NFo
(GHz) (dB) Mag. Ang. RN/50 Ω
0.5 2.6 0.71 1 1.57
1.0 1.7 0.68 17 0.96
1.5 1.6 0.68 28 0.75
2.0 1.6 0.66 36 0.67
2.5 1.6 0.63 42 0.56
3.0 1.6 0.59 49 0.53
3.5 1.8 0.56 55 0.55
4.0 2.0 0.53 62 0.58
Notes:
4. Reference plane per Figure 11 in Applications Information section.
MGA-87563 Typical Scattering Parameters[4], TC = 25°C, ZO = 50 Ω, V
dd = 3 V
Freq. S11 S21 S12 S22 K
GHz Mag Ang dB Mag Ang dB Mag Ang Mag Ang Factor
0.1 0.92 -5 -5.6 0.53 -90 -22.7 0.073 -7 0.86 -11 0.41
0.2 0.91 -8 -0.7 0.92 -100 -22.7 0.073 -9 0.85 -18 0.29
0.5 0.88 -20 6.7 2.15 -131 -23.4 0.068 -18 0.78 -43 0.33
1.0 0.79 -35 10.1 3.22 -170 -25.2 0.055 -26 0.61 -75 0.72
1.5 0.73 -49 11.2 3.63 163 -26.2 0.049 -33 0.50 -100 1.02
2.0 0.67 -60 11.4 3.72 140 -26.6 0.047 -39 0.42 -122 1.32
2.5 0.59 -69 11.0 3.54 119 -29.1 0.035 -40 0.31 -141 2.38
3.0 0.50 -78 10.7 3.41 101 -32.5 0.024 -52 0.25 -167 4.29
3.5 0.43 -83 10.1 3.20 85 -35.1 0.018 -12 0.20 172 6.74
4.0 0.37 -96 10.0 3.16 71 -37.7 0.013 -10 0.24 143 9.83
4.5 0.31 -91 8.7 2.72 52 -26.1 0.050 20 0.11 123 3.33
5.0 0.30 -105 8.1 2.55 42 -25.9 0.050 -3 0.17 127 3.48
ΓΓ
ΓΓ
Γopt
5
MGA-87563 Applications Information
Introduction
The MGA-87563 low noise RF amplifier is designed to
simplify wireless RF applications in the 0.5 to 4 GHz
frequency range. The MGA-87563 is a two-stage, GaAs
Microwave Monolithic Integrated Circuit (MMIC) ampli-
fier that uses feedback to provide wideband gain. The
output is matched to 50Ω and the input is partially
matched for optimum noise figure.
A patented, active bias circuit makes use of current
sources to “re-use” the drain current in both stages of
gain, thus minimizing the required supply current and
decreasing sensitivity to variations in power supply
voltage.
Test Circuit
The circuit shown in Figure 10 is used for 100% RF
testing of Noise Figure and Gain. The input of this
circuit is fixed tuned for a conjugate power match
(maximum power transfer, or, minimum Input VSWR)
at 2 GHz. Tests in this circuit are used to guarantee the
NFtest and Gtest parameters shown in the Electrical
Specifications table.
The 4.7 nH inductor, L1 (Coilcraft, Cary, IL part number
series 1008CT-040) placed in series with the input of
the amplifier is all that is necessary to match the input
to 50Ω at 2 GHz.
V
dd
C1
L1
4.7 nH50 Ω
RF
INPUT
RF
OUTPUT
50 Ω
10 Ω
Figure 10. Test Circuit for 2 GHz.
Phase Reference Planes
The positions of the reference planes used to measure
S-Parameters and to specify Γopt for the Noise
Parameters are shown in Figure 11. As seen in the
illustration, the reference planes are located at the
extremities of the package leads.
REFERENCE
PLANES
TEST CIRCUIT
Figure 11. Reference Planes.
Biasing
The MGA-87563 is a voltage-biased device and operates
from a single +3 volt power supply. With a typical
current drain of only 4.5 mA, the MGA-87563 is very
well suited for use in battery powered applications. All
bias regulation circuitry is integrated into the MMIC,
eliminating the need for external DC components. RF
performance is very consistent for 3-volt battery
supplies that may range from 2.7 to 3.3 volts, depending
on battery “freshness” or state of charge for
rechargeable batteries. Operation up to +5 volts is
discussed at the end of the Applications section.
The test circuit in Figure 10 illustrates a suitable
method for bringing bias into the MGA-87563. The bias
connection must be designed so that it adequately
bypasses the Vdd terminal while not inadvertently
creating any resonances at frequencies where the MGA-
87563 has gain.
The 10Ω resistor, R1, serves to “de-Q” any potential
resonances in the bias line that could lead to low gain,
unwanted gain variations or device instability. The
power supply end of R1 is bypassed to ground with
capacitor C1. The suggested value for C1 is 100 pF.
Significantly higher values for C1 are not recommended.
Many higher value chip capacitors (e.g., 1000 pF) are
not of sufficiently high quality at these frequencies to
function well as a RF bypass without adding harmful
parasitics or self-resonances.
While the input and output terminals are internally
resistively grounded, these pins should not be
considered to be current sinks. Connection of the
MGA-87563 amplifier to circuits that are at ground
potential may be made without the additional cost and
PCB space needed for DC blocking capacitors. If the
amplifier is to be cascaded with active circuits having
non-zero voltages present, the use of series blocking
capacitors is recommended.
6
Input Matching
The input of the MGA-87563 is partially matched
internally to 50 Ω. The use of a simple input conjugate
matching circuit (such as shown in Figure 10 for 2 GHz),
will lower the noise figure considerably. A significant
advantage of the MGA-87563’s design is that the
impedance match for NFo (minimum noise figure) is
very close to a conjugate power match. This means that
a very low noise figure can be realized simultaneously
with a low input VSWR. The typical difference between
the noise figure obtainable with a conjugate power
match at the input and NFo is only about 0.2 dB.
Output Matching
The output of the MGA-87563 is matched internally to
50 Ω above 1.8 GHz. The use of a conjugate matching
circuit, such as a simple series inductor, can increase
the gain considerably at lower frequencies. Matching
the output will not affect the noise figure.
Stability
If the MGA-87563 is cascaded with highly reactive
stages (such as filters) some precautions may be needed
to ensure stability. The low frequency stability (under
1.5 GHz) of the MGA-87563 can be enhanced by adding
a series R-L network in shunt with the output, as shown
in Figure 12. The inductor can be either a chip
component or a high impedance transmission line as
shown in the figure. Component values are selected
such that the output of the MGA-87563 will be resistively
loaded at low frequencies while allowing high frequency
signals to pass the stability load with minimal loss.
MGA
87563 RF
OUTPUT
25-50 Ω
HIGH IMPEDANCE
TRANSMISSION
OR INDUCTOR
DC BLOCKING
CAPACITOR
Figure 12. Output Circuitry for Low Frequency Stability.
Typical values for the resistor are in the 25 to 50Ω
range. A suggested starting place for the inductor is a
0.35 to 0.40-inch long microstripline with a width of
0.020 inches, using 0.031-inch thick FR-4 (εr = 4.8)
circuit board as the substrate.
For applications near 1.5 GHz, gain (and output power)
may be traded off for increased stability.
Some precautions regarding the Vdd connection of the
MGA-87563 are also recommended to ensure stability
within the operating frequency range of the device. It is
important that the connection to the power supply be
properly bypassed to realize full amplifier performance.
Refer to the Biasing section above for more information.
SOT-363 PCB Layout
A PCB pad layout for the miniature SOT-363 (SC-70)
package is shown in Figure 13 (dimensions are in
inches). This layout provides ample allowance for
package placement by automated assembly equipment
without adding parasitics that could impair the high
frequency RF performance of the MGA-87563. The
layout is shown with a nominal SOT-363 package
footprint superimposed on the PCB pads.
0.026
0.079
0.018
0.039
Dimensions in inches.
Figure 13. Recommended PCB Pad Layout for Avago’s SC70
6L/SOT-363 Products.
RF Layout
The RF layout in Figure 14 is suggested as a starting
point for designs using the MGA-87563 amplifier.
Adequate grounding is needed to obtain maximum
performance and to obviate potential instability. All
three ground pins of the MMIC should be connected to
RF ground by using plated through holes (vias) near
the package terminals.
RF OUTPUT
V
DD
RF INPUT
50 Ω
50 Ω
87
Figure 14. RF Layout.
7
It is recommended that the PCB traces for the ground
pins NOT be connected together underneath the body
of the package. PCB pads hidden under the package
cannot be adequately inspected for SMT solder quality.
FR-4 or G-10 PCB material is a good choice for most low
cost wireless applications. Typical board thickness is
0.025 or 0.031 inches. The width of 50 Ω microstriplines
in these PCB thicknesses is also convenient for
mounting chip components such as the series inductor
at the input for impedance matching or for DC blocking
capacitors. For noise figure sensitive applications, the
use of PTFE/glass dielectric materials may be warranted
to minimize transmission line losses at the amplifier
input.
Higher Bias Voltages
While the MGA-87563 is designed for use in +3 volt
battery powered applications, the internal bias
regulation circuitry allows it to be easily operated with
any power supply voltage from +2.7 to 5 volts. Figure
15 shows an increase of approximately 1 dB in the
associated gain with +5 volts applied. The P1dB output
power (Figure 17) is also higher by about 1 dBm. The
effect of higher V
dd on noise figure is negligible as
indicated in Figure 16.
ASSOCIATED GAIN (dB)
0.5
9
FREQUENCY (GHz)
2.0
17
10
4.0
14
2.5
1.0
13
16
12
1.5 3.0 3.5
15
11
Figure 15. Associated Gain vs. Frequency at V
dd = 5V.
OPTIMUM NF (dB)
0.5
0.5
FREQUENCY (GHz)
2.0
3.5
1.0
4.0
2.5
2.5
1.0
2.0
3.0
1.5 3.0 3.5
1.5
Figure 16. Optimum Noise Figure vs. Frequency at V
dd = 5V.
P 1 dB (dBm)
0.6
-2.00
FREQUENCY (GHz)
0.00
-1.50
2.41.2
-1.00
-0.50
1.8 3.0 3.6 4.2
Figure 17. Output Power at 1 dB Gain Compression vs.
Frequency at V
dd = 5V.
8
Package Dimensions
Outline 63 (SOT-363/SC-70)
Part Number Ordering Information
No. of
Part Number Devices Container
MGA-87563-TR1 3000 7" Reel
MGA-87563-TR2 10000 13" Reel
MGA-87563-BLK 100 antistatic bag
MGA-87563-TR1G 3000 7" Reel
MGA-87563-TR2G 10000 13" Reel
MGA-87563-BLKG 100 antistatic bag
Note: For lead-free option, the part number will have the
character “G” at the end.
E
HE
D
e
A1
b
A
A2
Q1
L
c
DIMENSIONS (mm)
MIN.
1.15
1.80
1.80
0.80
0.80
0.00
0.10
0.15
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.30
0.20
0.30
SYMBOL
E
D
HE
A
A2
A1
Q1
e
b
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold flash & metal burr.
4. All specifications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror finish.
0.650 BCS
Tape Dimensions and Product Orientation
For Outline 63
Device Orientation
P
P
0
P
2
F
W
C
D
1
D
E
A
0
10° MAX.
t
1
(CARRIER TAPE THICKNESS) T
t
(COVER TAPE THICKNESS)
10° MAX.
B
0
K
0
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
A
0
B
0
K
0
P
D
1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
P
0
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t
1
8.00 + 0.30 - 0.10
0.254 ± 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P
2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
T
t
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL END VIEW
8 mm
4 mm
TOP VIEW
87 87 87 87
For product information and a complete list of distributors, please go to our web site:
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited
in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies, Limited. All rights reserved.
Obsoletes 5989-1803EN
AV01-0200EN May 19, 2006
