© 2003 IXYS All rights reserved DS98705A(06/03)
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1000 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1000 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C4A
IDM TC= 25°C, pulse width limited by TJM 16 A
IAR TC= 25°C4A
EAR TC= 25°C 20mJ
EAS 700 mJ
dv/dt IS≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, 5 V/ns
TJ ≤ 150°C, RG = 2 Ω
PDTC= 25°C 150 W
TJ-55 to +150 °C
TJM 150 °C
Tstg -55 to +150 °C
TL1.6 mm (0.063 in) from case for 10 s 300 °C
MdMounting torque (TO-220) 1.13/10 Nm/lb.in.
Weight TO-220 4 g
TO-263 2 g
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
Features
zIXYS advanced low Qg process
zLow gate charge and capacitances
- easier to drive
- faster switching
zInternational standard packages
zLow RDS (on)
zRated for unclamped Inductive load
Switching (UIS)
zMolding epoxies meet UL 94 V-0
flammability classification
Advantages
zEasy to mount
zSpace savings
zHigh power density
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1000 V
VGS(th) VDS = VGS, ID = 1.5 mA 2.5 4.5 V
IGSS VGS = ±20 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C50µA
VGS = 0 V TJ = 125°C1mA
RDS(on) VGS = 10 V, ID = 0.5 ID25 3.0 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
HiPerFETTM
Power MOSFETs
Q-Class
VDSS =1000 V
ID25 =4A
RDS(on) = 3.0 ΩΩ
ΩΩ
Ω
trr ≤ ≤
≤ ≤
≤ 250 ns
G
S
TO-263 (IXFA)
GDS
TO-220 (IXFP)
G = Gate D = Drain
S = Source TAB = Drain
IXFA 4N100Q
IXFP 4N100Q
D (TAB)
D (TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 4N100Q
IXFP 4N100Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.5 2.5 S
Ciss 1050 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 120 pF
Crss 30 pF
td(on) 17 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns
td(off) RG = 4.7 Ω (External), 32 n s
tf18 ns
Qg(on) 39 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 9nC
Qgd 22 nC
RthJC 0.8 K/W
RthCK (TO-220) 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 4 A
ISM Repetitive; pulse width limited by TJM 16 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr 250 ns
QRM IF = IS, -di/dt = 100 A/µs, VR = 100 V 0.52 µC
IRM 1.8 A
TO-263 (IXFA) Outline
1. Gate
2. Drain
3. Source
4. Drain
Bottom Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
Pins: 1 - Gate 2 - Drain
3 - Source 4 - Drain
Bottom Side
TO-220 (IXFP) Outline
© 2003 IXYS All rights reserved DS98705A(06/03)
VDS - Volts
0246810
ID - Amperes
0
1
2
3
4
VDS - Volts
0 5 10 15 20
ID - Amperes
0
1
2
3
4
TJ - Degrees C
25 50 75 100 125 150
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VGS - Volts
345678
ID - Amperes
0
1
2
3
4
ID - Amperes
0123456
RDS(ON) - Normalized
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
VCE - Volts
0 4 8 12 16 20
ID - Amperes
0
1
2
3
4
5
6
7V
6V
VGS = 10V
VGS = 10V
9V
8V
TJ = 25°C VGS = 10V
9V
8V
TJ = 25°C
TJ = 125°C
5V 5V
TJ = 25°C
TJ = 125°C
6V
7V
5V
6V
7V
VGS = 10V
9V
8V
TJ = 125OC
VGS = 10V
ID = 2A
TJ = 25OC
Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC
Figure 3. Output characteristics at 125°C
Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ
Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID
Figure 4. Admittance Curves
IXFA 4N100Q
IXFP 4N100Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFA 4N100Q
IXFP 4N100Q
IXYS MOSFETs and IGBTs are covered by one or more
of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343
TC - Degrees Centigrade
-50 -25 0 25 50 75 100 125 150
ID - Amperes
0
1
2
3
4
5
Pulse Width - Seconds
10-4 10-3 10-2 10-1 100101
R(th)JC - K/W
0.01
0.10
1.00
VDS - Volts
0 5 10 15 20 25 30 35
Capacitance - pF
10
100
1000
VSD - Volts
0.2 0.4 0.6 0.8 1.0 1.2
ID - Amperes
0
2
4
6
8
10
Gate Charge - nC
0 102030405060
VGS - Volts
0
3
6
9
12
15
Crss
Coss
Ciss
VDS = 600 V
ID = 3 A
IG = 10 mA f = 1MHz
TJ = 125OC
TJ = 25OC
60
2000
Figure 7. Gate Charge Figure 8. Capacitance Curves
Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Drain Current vs. Case Temperature
Figure 11. Transient Thermal Resistance
