MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) Complementary Power Transistors DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. http://onsemi.com SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS COMPLEMENTARY Features * * * * * * * Lead Formed for Surface Mount Applications in Plastic Sleeves Straight Lead Version in Plastic Sleeves ("1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Epoxy Meets UL 94, V-0 @ 0.125 in NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free and are RoHS Compliant COLLECTOR 2,4 1 BASE COLLECTOR 2,4 1 BASE 3 EMITTER 3 EMITTER 4 4 1 2 3 1 DPAK CASE 369C STYLE 1 2 3 IPAK CASE 369D STYLE 1 MARKING DIAGRAMS AYWW J3xxG DPAK A Y WW xx G YWW J3xxG IPAK = Site Code = Year = Work Week = 1, 1C, 2, or 2C = Pb-Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 9 of this data sheet. (c) Semiconductor Components Industries, LLC, 2013 November, 2013 - Rev. 13 1 Publication Order Number: MJD31/D MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) MAXIMUM RATINGS Rating Symbol Max Unit Collector-Emitter Voltage MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G VCEO Collector-Base Voltage MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G VCB Emitter-Base Voltage VEB 5.0 Vdc IC 3.0 Adc Collector Current - Continuous Collector Current - Peak 40 100 40 100 Vdc Vdc ICM 5.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range 15 0.12 1.56 0.012 W W/C W W/C TJ, Tstg -65 to + 150 C ESD - Human Body Model HBM 3B V ESD - Machine Model MM C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 8.3 C/W Thermal Resistance, Junction-to-Ambient* RqJA 80 C/W TL 260 C Lead Temperature for Soldering Purposes *These ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 2 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Symbol Characteristic Min Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (Note 1) (IC = 30 mAdc, IB = 0) MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G VCEO(sus) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G (VCE = 60 Vdc, IB = 0) MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G ICEO Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) ICES Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) IEBO Vdc 40 100 - - mAdc - 50 - 50 - 20 - 1 25 10 - 50 - 1.2 - 1.8 3 - 20 - mAdc mAdc ON CHARACTERISTICS (Note 1) hFE DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) VCE(sat) Base-Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) VBE(on) Vdc Vdc DYNAMIC CHARACTERISTICS Current Gain - Bandwidth Product (Note 2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) fT Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) hfe 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 2. fT = hfe* ftest. http://onsemi.com 3 MHz MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) TYPICAL CHARACTERISTICS VCC +30 V TA TC 2.5 25 RC PD, POWER DISSIPATION (WATTS) 25 ms 2 20 +11 V RB SCOPE 0 1.5 15 TA (SURFACE MOUNT) TC 1 10 0.5 5 0 0 25 tr, tf 10 ns DUTY CYCLE = 1% 50 75 100 T, TEMPERATURE (C) 125 150 Figure 2. Switching Time Test Circuit 2 0.3 3 2 IC/IB = 10 TJ = 25C tr @ VCC = 30 V IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts 1 t, TIME (s) t, TIME (s) 0.7 0.5 -4 V RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating 1 D1 51 -9 V tr @ VCC = 10 V tf @ VCC = 30 V 0.7 0.5 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.03 0.02 0.03 1 0.7 0.5 0.3 0.2 td @ VBE(off) = 2 V 0.05 0.07 0.1 0.5 0.7 0.03 0.03 1 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. Turn-On Time Figure 4. Turn-Off Time 2 3 D = 0.5 0.2 RqJC(t) = r(t) RqJC RqJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.05 0.07 0.05 0.01 0.03 0.3 0.1 0.07 0.05 SINGLE PULSE P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 Figure 5. Thermal Response http://onsemi.com 4 20 30 50 100 200 300 500 1k MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) TYPICAL CHARACTERISTICS - MJD31, MJD31C (NPN) 1000 10 1 0.01 0.6 VCE(sat), COLL-EMITT SATURATION VOLTAGE (V) -55C 0.1 1 10 25C 100 10 1 0.01 150C 0.2 25C 0.1 -55C 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) 1.2 1.1 0.9 1.0 0.9 -55C 0.8 0.7 25C 0.6 0.5 150C 0.4 0.3 0.01 0.1 1 -55C 0.8 25C 0.7 0.6 150C 0.5 0.4 0.3 0.2 0.001 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 Figure 9. Base-Emitter Saturation Voltage VCE, COLLECTOR-EMITTER VOLTAGE (V) VCE = 5 V IC/IB = 10 1.0 Figure 8. Collector-Emitter Saturation Voltage VBE(on), BASE-EMITTER ON VOLTAGE (V) 10 Figure 7. DC Current Gain at VCE = 2 V 0.3 0.2 0.001 1 Figure 6. DC Current Gain at VCE = 4 V 0.4 1.1 0.1 IC, COLLECTOR CURRENT (A) 0.5 1.2 -55C IC, COLLECTOR CURRENT (A) IC/IB = 10 0 0.001 VCE = 2 V 150C hFE, DC CURRENT GAIN 25C 100 1000 VCE = 4 V VBE(sat), BASE-EMITT SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN 150C 10 2 TA = 25C 1.6 1.2 100 mA 500 mA 0.8 IC = 3 A 1A 0.4 10 mA 0 0.01 0.1 1 10 100 IC, COLLECTOR CURRENT (A) IB, BASE CURRENT (mA) Figure 10. Base-Emitter "On" Voltage Figure 11. Collector Saturation Region http://onsemi.com 5 1000 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) TYPICAL CHARACTERISTICS - MJD31, MJD31C (NPN) Cib 100 Cob 10 100 fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TA = 25C 0.1 1 10 VR, REVERSE VOLTAGE (V) VCE = 5 V TA = 25C 10 1 0.001 1 100 Figure 12. Capacitance 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 13. Current-Gain-Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 1 0.1 0.01 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 14. Safe Operating Area http://onsemi.com 6 100 10 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) TYPICAL CHARACTERISTICS - MJD32, MJD32C (PNP) 1000 hFE, DC CURRENT GAIN 100 -55C 10 1 0.01 0.9 1.4 0.4 0.3 0.2 25C 0.1 0 0.001 0.01 0.1 1 10 1.2 1.0 -55C 0.8 25C 0.6 150C 0.4 0.2 0.001 10 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 17. Collector-Emitter Saturation Voltage Figure 18. Base-Emitter Saturation Voltage VCE = 5 V 1.0 0.9 150C 25C 0.6 -55C 0.3 0.2 0.001 1 IC/IB = 10 150C 0.5 0.4 0.1 Figure 16. DC Current Gain at VCE = 2 V 0.6 0.5 0.01 Figure 15. DC Current Gain at VCE = 4 V -55C 0.7 10 IC, COLLECTOR CURRENT (A) IC/IB = 10 0.8 -55C 1 10 0.7 1.1 100 IC, COLLECTOR CURRENT (A) 0.8 1.2 VBE(on), BASE-EMITTER ON VOLTAGE (V) 1 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLL-EMITT SATURATION VOLTAGE (V) 1 0.1 VCE = 2 V 25C 150C 0.01 0.1 1 IC, COLLECTOR CURRENT (A) 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) hFE, DC CURRENT GAIN 1000 VCE = 4 V 25C 150C 2 TA = 25C 500 mA 1.6 100 mA 1.2 1A IC = 3 A 0.8 0.4 0 10 mA 0.01 0.1 1 10 100 IB, BASE CURRENT (mA) Figure 20. Collector Saturation Region Figure 19. Base-Emitter "On" Voltage http://onsemi.com 7 1000 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) TYPICAL CHARACTERISTICS Cib 100 Cob 10 1 0.1 1 10 100 fT, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz) TA = 25C VCE = 5 V TA = 25C 10 1 0.001 100 VR, REVERSE VOLTAGE (V) 0.01 0.1 1 IC, COLLECTOR CURRENT (A) Figure 21. Capacitance Figure 22. Current-Gain-Bandwidth Product 10 IC, COLLECTOR CURRENT (A) C, CAPACITANCE (pF) 1000 1 ms 1 1s 0.1 0.01 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Figure 23. Safe Operating Area http://onsemi.com 8 100 10 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) ORDERING INFORMATION Package Type Package Shipping MJD31CG DPAK (Pb-Free) 369C 75 Units / Rail NJVMJD31CG* DPAK (Pb-Free) 369C 75 Units / Rail MJD31C1G IPAK (Pb-Free) 369D 75 Units / Rail MJD31CRLG DPAK (Pb-Free) 369C 1,800 / Tape & Reel NJVMJD31CRLG* DPAK (Pb-Free) 369C 1,800 / Tape & Reel MJD31CT4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD31CT4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD31T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD31T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD32CG DPAK (Pb-Free) 369C 75 Units / Rail NJVMJD32CG* DPAK (Pb-Free) 369C 75 Units / Rail MJD32CRLG DPAK (Pb-Free) 369C 1,800 / Tape & Reel MJD32CT4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD32CT4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel MJD32RLG DPAK (Pb-Free) 369C 1,800 / Tape & Reel MJD32T4G DPAK (Pb-Free) 369C 2,500 / Tape & Reel NJVMJD32T4G* DPAK (Pb-Free) 369C 2,500 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. http://onsemi.com 9 MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.101 5.80 0.228 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 --- 0.040 0.155 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR 3.0 0.118 1.6 0.063 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 10 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 --- 1.01 3.93 --- MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G, MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP) PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 -T- SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. 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