MJD31CG - ON SEMICONDUCTOR

November, 2013 − Rev. 13

1Publication Order Number:

MJD31/D

MJD31, NJVMJD31T4G,

MJD31C, NJVMJD31CT4G

(NPN), MJD32,

NJVMJD32T4G, MJD32C,

NJVMJD32CG,

NJVMJD32CT4G (PNP)

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose amplifier and low speed switching

applications.

Features

•Lead Formed for Surface Mount Applications in Plastic Sleeves

•Straight Lead Version in Plastic Sleeves (“1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel (“T4” Suffix)

•Electrically Similar to Popular TIP31 and TIP32 Series

•Epoxy Meets UL 94, V−0 @ 0.125 in

•NJV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free and are RoHS Compliant

SILICON

POWER TRANSISTORS

3 AMPERES

40 AND 100 VOLTS

15 WATTS

See detailed ordering and shipping information in the package

dimensions section on page 9 of this data sheet.

ORDERING INFORMATION

IPAK

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING DIAGRAMS

A = Site Code

Y = Year

WW = Work Week

xx = 1, 1C, 2, or 2C

G = Pb−Free Package

AYWW

J3xxG

YWW

J3xxG

http://onsemi.com

DPAK IPAK

123

BASE

EMITTER

COLLECTOR

2,4

BASE

EMITTER

COLLECTOR

2,4

COMPLEMENTARY

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector−Emitter Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCEO 40

100

Vdc

Collector−Base Voltage

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCB 40

100

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current − Continuous IC3.0 Adc

Collector Current − Peak ICM 5.0 Adc

Base Current IB1.0 Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD15

0.12

W/°C

Total Power Dissipation

@ TA = 25°C

Derate above 25°C

PD1.56

0.012

W/°C

Operating and Storage Junction Temperature Range TJ, Tstg −65 to +150 °C

ESD − Human Body Model HBM 3B V

ESD − Machine Model MM C V

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the

Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may

affect device reliability.

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case RqJC 8.3 °C/W

Thermal Resistance, Junction−to−Ambient* RqJA 80 °C/W

Lead Temperature for Soldering Purposes TL260 °C

*These ratings are applicable when surface mounted on the minimum pad sizes recommended.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Sustaining Voltage (Note 1)

(IC = 30 mAdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G

VCEO(sus)

100

−

Vdc

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

MJD31, NJVMJD31T4G, MJD32, NJVMJD32T4G

(VCE = 60 Vdc, IB = 0)

MJD31C, NJVMJD31CG, NJVMJD31CRLG, NJVMJD31CT4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G

ICEO

−

mAdc

Collector Cutoff Current

(VCE = Rated VCEO, VEB = 0)

ICES

−20

mAdc

Emitter Cutoff Current

(VBE = 5 Vdc, IC = 0)

IEBO

−1

mAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(IC = 1 Adc, VCE = 4 Vdc)

(IC = 3 Adc, VCE = 4 Vdc)

hFE

−

Collector−Emitter Saturation Voltage

(IC = 3 Adc, IB = 375 mAdc)

VCE(sat)

−1.2

Vdc

Base−Emitter On Voltage

(IC = 3 Adc, VCE = 4 Vdc)

VBE(on)

−1.8

Vdc

DYNAMIC CHARACTERISTICS

Current Gain − Bandwidth Product (Note 2)

(IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz)

fT3−

MHz

Small−Signal Current Gain

(IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz)

hfe 20 −

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.

2. fT = ⎪hfe⎪• ftest.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

Figure 1. Power Derating

T, TEMPERATURE (°C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

Figure 2. Switching Time Test Circuit

0.03

IC, COLLECTOR CURRENT (AMPS)

0.03 0.05 0.07 0.1 0.2 0.5 0.7

IB1 = IB2

IC/IB = 10

ts′ = ts - 1/8 tf

TJ = 25°C

t, TIME (s)μ

0.3

0.7

0.5

0.3

ts′

0.2

0.1

0.07

0.05

Figure 3. Turn−On Time

IC, COLLECTOR CURRENT (AMPS)

0.02

IC/IB = 10

TJ = 25°C

t, TIME (s)μ

0.7

0.5

0.3

0.1

0.07

0.05

0.03

+11 V

25 ms

-9 V

-4 V

SCOPE

VCC

+30 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1%

RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

REVERSE ALL POLARITIES FOR PNP.

0.03 0.07 0.3 30.1 0.7

0.05 0.5 1

tr @ VCC = 30 V

tr @ VCC = 10 V

td @ VBE(off) = 2 V

tf @ VCC = 30 V

tf @ VCC = 10 V

2.5

1.5

0.5

TATC

Figure 4. Turn−Off Time

TA (SURFACE MOUNT)

TYPICAL CHARACTERISTICS

t, TIME (ms)

0.01 1 k

0.3

0.2

0.07

r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED)

RqJC(t) = r(t) RqJC

RqJC = 8.33°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

SINGLE PULSE

0.01

0.7 D = 0.5

Figure 5. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

0.1

0.05

0.01

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 6. DC Current Gain at VCE = 4 V

hFE, DC CURRENT GAIN

VCE = 4 V

25°C

150°C

−55°C

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 7. DC Current Gain at VCE = 2 V

hFE, DC CURRENT GAIN

VCE = 2 V

25°C

150°C

−55°C

0.1

0.2

0.3

0.4

0.5

0.6

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 8. Collector−Emitter Saturation Voltage

VCE(sat), COLL−EMITT SATURATION

VOLTAGE (V)

IC/IB = 10

25°C

150°C

−55°C

VBE(sat), BASE−EMITT SATURATION VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

Figure 9. Base−Emitter Saturation Voltage

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

VCE = 5 V

VBE(on), BASE−EMITTER ON VOLTAGE (V)

IC, COLLECTOR CURRENT (A)

Figure 10. Base-Emitter “On” Voltage

−55°C

25°C

150°C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

IC/IB = 10

−55°C

25°C

150°C

0.4

0.8

1.2

1.6

0.01 0.1 1 10 100 1000

IB, BASE CURRENT (mA)

Figure 11. Collector Saturation Region

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 mA

100 mA 500 mA

1 A

IC = 3 A

TA =

25°C

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS − MJD31, MJD31C (NPN)

100

1000

0.1 1 10 100

VR, REVERSE VOLTAGE (V)

Figure 12. Capacitance

C, CAPACITANCE (pF)

Cib

Cob

TA = 25°C

100

0.001 0.01 0.1 1 10

VCE = 5 V

TA = 25°C

IC, COLLECTOR CURRENT (A)

Figure 13. Current−Gain−Bandwidth Product

, CURRENT−GAIN − BANDWIDTH

PRODUCT (MHz)

0.01

0.1

1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 14. Safe Operating Area

IC, COLLECTOR CURRENT (A)

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS − MJD32, MJD32C (PNP)

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 15. DC Current Gain at VCE = 4 V

hFE, DC CURRENT GAIN

VCE = 4 V

25°C

150°C

−55°C

100

1000

0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 16. DC Current Gain at VCE = 2 V

hFE, DC CURRENT GAIN

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

0.001 0.01 0.1 1 10

VCE = 2 V

25°C

150°C

−55°C

25°C

150°C

−55°C

IC, COLLECTOR CURRENT (A)

Figure 17. Collector−Emitter Saturation

Voltage

VCE(sat), COLL−EMITT SATURATION

VOLTAGE (V)

IC/IB = 10

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.001 0.01 0.1 1 10

25°C

150°C

−55°C

IC, COLLECTOR CURRENT (A)

Figure 18. Base−Emitter Saturation Voltage

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

0.001 0.01 0.1 1 10

VCE = 5 V

25°C

150°C

−55°C

IC, COLLECTOR CURRENT (A)

Figure 19. Base−Emitter “On” Voltage

VBE(on), BASE−EMITTER ON

VOLTAGE (V)

0.4

0.8

1.2

1.6

0.01 0.1 1 10 100 1000

IB, BASE CURRENT (mA)

Figure 20. Collector Saturation Region

VCE, COLLECTOR−EMITTER VOLTAGE (V)

10 mA

100 mA

500 mA

1 A

IC = 3 A

TA =

25°C

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

TYPICAL CHARACTERISTICS

100

1000

0.1 1 10 100

VR, REVERSE VOLTAGE (V)

Figure 21. Capacitance

C, CAPACITANCE (pF)

Cib

Cob

TA = 25°C

100

0.001 0.01 0.1 1 10

IC, COLLECTOR CURRENT (A)

Figure 22. Current−Gain−Bandwidth Product

, CURRENT−GAIN − BANDWIDTH

PRODUCT (MHz)

VCE = 5 V

TA = 25°C

0.01

0.1

1 10 100

VCE, COLLECTOR−EMITTER VOLTAGE (V)

Figure 23. Safe Operating Area

IC, COLLECTOR CURRENT (A)

1 ms

1 s

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD31CG DPAK

(Pb−Free)

369C 75 Units / Rail

NJVMJD31CG* DPAK

(Pb−Free)

369C 75 Units / Rail

MJD31C1G IPAK

(Pb−Free)

369D 75 Units / Rail

MJD31CRLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

NJVMJD31CRLG* DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

MJD31CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD31CT4G* DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

MJD31T4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD31T4G* DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

MJD32CG DPAK

(Pb−Free)

369C 75 Units / Rail

NJVMJD32CG* DPAK

(Pb−Free)

369C 75 Units / Rail

MJD32CRLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

MJD32CT4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD32CT4G* DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

MJD32RLG DPAK

(Pb−Free)

369C 1,800 / Tape & Reel

MJD32T4G DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

NJVMJD32T4G* DPAK

(Pb−Free)

369C 2,500 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP

Capable.

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE D

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

0.005 (0.13) C

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

D0.235 0.245 5.97 6.22

E0.250 0.265 6.35 6.73

A0.086 0.094 2.18 2.38

b0.025 0.035 0.63 0.89

c2 0.018 0.024 0.46 0.61

b2 0.030 0.045 0.76 1.14

c0.018 0.024 0.46 0.61

e0.090 BSC 2.29 BSC

b3 0.180 0.215 4.57 5.46

L4 −−− 0.040 −−− 1.01

L0.055 0.070 1.40 1.78

L3 0.035 0.050 0.89 1.27

Z0.155 −−− 3.93 −−−

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME

Y14.5M, 1994.

2. CONTROLLING DIMENSION: INCHES.

3. THERMAL PAD CONTOUR OPTIONAL WITHIN DI-

MENSIONS b3, L3 and Z.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD

FLASH, PROTRUSIONS, OR BURRS. MOLD

FLASH, PROTRUSIONS, OR GATE BURRS SHALL

NOT EXCEED 0.006 INCHES PER SIDE.

5. DIMENSIONS D AND E ARE DETERMINED AT THE

OUTERMOST EXTREMES OF THE PLASTIC BODY.

6. DATUMS A AND B ARE DETERMINED AT DATUM

PLANE H.

12 3

H0.370 0.410 9.40 10.41

A1 0.000 0.005 0.00 0.13

L1 0.108 REF 2.74 REF

L2 0.020 BSC 0.51 BSC

DETAIL A

SEATING

PLANE

L2 GAUGE

PLANE

DETAIL A

ROTATED 90 CW5

MJD31, NJVMJD31T4G, MJD31C, NJVMJD31CT4G (NPN), MJD32, NJVMJD32T4G,

MJD32C, NJVMJD32CG, NJVMJD32CT4G (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

123

−T−

SEATING

PLANE

D3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 −−− 3.93 −−−

IPAK

CASE 369D

ISSUE C

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks,

copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC

reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any

particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without

limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications

and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC

does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for

surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where

personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and

its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly,

any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture

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PUBLICATION ORDERING INFORMATION

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Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MJD31/D

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