MIXA450PF1200TSF - IXYS - Datasheet.Live

MIXA450PF1200TSF

Phase leg + free wheeling Diodes + NTC

XPT IGBT Module

5

6

4

12 8 7

10/11

3

9

Part number

MIXA450PF1200TSF

Backside: isolated

C25

CE(sat)

VV1.8

CES

650

1200

=

V= V

I= A

2x

Features / Ad vantages: Applications: Package:

● High level of integration - only one

power semiconductor module required

for the whole drive

● Rugged XPT design (Xtreme light Punch Through)

results in:

- short circuit rated for 10 µsec.

- very low gate charge

- low EMI

- square RBSOA @ 3x Ic

● Thin wafer technology combined with the XPT design

results in a competitive low VCE(sat)

● Temperature sense included

● SONIC™ diode

- fast and soft reverse recovery

- low operating forward voltage

● AC motor drives

● Pumps, Fans

● Air-conditioning system

● Inverter and power supplies

● UPS

SimBus F

● Industry standard outline

● RoHS compliant

● Soldering pins for PCB mounting

● Height: 17 mm

● Base plate: Copper

internally DCB isolated

● Advanced power cycling

● Isolation Voltage: V~

3000

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA450PF1200TSF

-di /dt = A/µs

T = °C

V

CES

V1200

collector emitter voltage

collector emitter saturation voltage

T = 25°C

collect or current A

650

A

C

VJ

Symbol Definition

Ratings

typ. max.min.Conditions Unit

450

V

CE(sat)

total power dissipation 2100 W

collector emitter leakage current

6.5 V

turn-on delay time 85 ns

t

reverse bias safe operating area

A

V

GES

V±20

V

GEM

max. transient gate emitte r volta g e

T = °C

C

V

P

tot

gate emitter threshold voltage

RBSOA

900

±30

T = °C

VJ

V

max. DC gate voltage

I

C25

I

C

T = 25°C

VJ

I = A; V = 15 V

CGE

T = 25°C

VJ

V

GE(th)

I

CES

I = mA; V = V

CGECE

V = V ; V = 0 V

CE CES GE

I

GES

T = 25°C

VJ

gate emitter leakage current V = ±20 V

GE

2.15

5.95.4

mA

6mA

1

1.5

G(on)

total gate charge V = V; V = 15 V; I = A

CE

Q

GE C

1400 nC

t

E

d(on)

r

d(off)

f

on

off

80 ns

310 ns

360 ns

22 mJ

68 mJ

current rise time

turn-off delay time

current fall time

turn-on energy per pulse

turn-off energy per pulse

inductive load

V = V; I = A

V = ±15 V; R = Ω

CE C

GE G

V = ±15 V; R = Ω

GE G

V = V

CEmax

1200

short circuit safe operating area

µs

SCSOA

10T = °C

VJ

V = V; V = ±15 V

CE GE

short circuit duration

t

short circuit current

I

SC

R = Ω; non-repetitive

G

1900 A

R

thJC

thermal resistance junction to case 0.06 K/W

V

RRM

V1200

max. repetitive rev ers e voltage T = 25°C

VJ

T = 25°C

forward current A

380

A

C

265T = °C

C

I

F25

I

F

T = 25°C

forward voltage V

2.30

V

VJ

2.00T = 125°C

VJ

V

F

I = A

F

T = 25°C

reverse current mA

*

mA

VJ

*T = 125°C

VJ

I

RR RRM

T = 125°C

VJ

Q

I

t

rr

RM

rr

62 µC

425 A

360 ns

reverse recovery charge

max. reverse recovery current

reverse recovery time

V =

I = A; V = 0 V

F

FGE

E

rec

26 mJ

reverse recovery energy

R

thJC

thermal resistance junction to case 0.095 K/W

V = V

T = 25°C

C

T = 25°C

VJ

T = °C

VJ

450

18

450

1.6

600

900

5400

600

I

CM

1.8

R

thCH

thermal resistance case to heatsink 0.03 K/W

R

thCH

thermal resistance case to heatsink 0.04 K/W

* not applicable, see Ices value above

IGBT

Diode

600 V

V = V

CEmax

1200

80

125

µA

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA450PF1200TSF

Ratings

XXX XX-XXXXX

YYWWx

2D Data Matrix

Logo UL Part number Date Code Location

I

X

M

A

450

PF

1200

T

SF

Part number

IGBT

XPT IGBT

Gen 1 / std

Phase leg + free wheeling Diodes

Thermistor \ Temperature sensor

SimBus F

Module

=

Current Rating [A]

Reverse Voltage [V]

=

Package

T

VJ

°C

M

D

Nm6

mounting torque 3

T

stg

°C125

storage temperature -40

Weight g350

Symbol Definition typ. max.min.Conditions

virt ua l j un ctio n temp e r ature

Unit

M

T

Nm6

terminal torque 3

VV

t = 1 second

V

t = 1 minute

isolation voltage

mm

12.7

10.0

d

Spp/App

creepage distance on surface | striking distance through air

d

Spb/Apb

terminal to backside

I

RMS

RMS current A

per terminal

150-40

terminal to terminal

SimBus F

Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering

0 25 50 75 100 125 150

102

103

104

105

R

[]

Typ. NTC resistance vs. temperature

TC[°C]

50/60 Hz, RMS; I ≤ 1 mA

ISOL

MIXA450PF1200TSF 511202Box 3MIXA450PF1200TSFStandard

R

pin-chip

resistance pin to chip 0.65 mΩ

2500

3000

ISOL

V = V

CEsat

+ 2·R·I

C

resp. V = V

F

+ 2·R·I

F

threshold voltage V

mΩ

V

0 max

R

0 max

slope resistance *

1.1

3.1

1.25

1.9

Equivalent Circuits for Simulation

T =

VJ

IV

0

R

0

IGBT Diode

150 °C

* on die level

T = 25°

resistance kΩ

5.25

K

VJ

3375

R

25

B

25/50

5

4.75

temperature coefficient

Symbol Definition typ. max.min.Conditions Unit

Temperature Sensor NTC

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA450PF1200TSF

1,2

17

20,5

22

50

57,5

62

94,5

110

122

137

152

0,8

R2,5

0

7,25

11,06

33,92

37,73

60,59

64,4

87,26

7,75

0

3,75

57,96

0,46

10

11

98 7 6 5

1 2

4

3

5

6

4

12 8 7

10/11

3

9

Outlines SimBus F

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA450PF1200TSF

0123

0

200

400

600

800

0 200 400 600 800 1000

0

10

20

30

40

50

60

70

0

25

50

75

100

125

150

175

01234

0

200

400

600

800

V

CE

[V]

I

C

[A]

Q

G

[nC]

V

GE

[V]

9V

11 V

5 6 7 8 9 10111213

0

200

400

600

800

0 400 800 1200 1600

0

5

10

15

20

T

VJ

=125°C

13 V

0 200 400 600 800 1000

0

40

80

120

160

0

200

400

600

800

E

[mJ]

Eoff

Fig. 1 Typ. output characteristics

V

CE

[V]

I

C

[A]

VGE =15V

17 V

19 V

Fig. 2 Typ. output characteristics

I

C

[A]

Fig. 3 Typ. transfer characteristics

V

GE

[V]

Fig. 4 Typ. turn-on gate charge

Fig. 5 Typ. turn-on energy & switching times

vs. collector current, inductive switching

Fig. 6 Typ. switching energy

versus gate resistance

E

[mJ]

I

C

[A]

VGE =15V

T

VJ

= 25°C

T

VJ

=125°C

T

VJ

=25°C

T

VJ

=125°C

0.001 0.01 0.1 1 10

0.00

0.02

0.04

0.06

t[s]

single pulse

Fig. 7 Typ. trans. therm. impedance

Erec (off)

Eon

td(on)

tr

0246810

0

20

40

60

80

100

0

50

100

150

200

250

Fig. 8 Typ. turn-on energy, switching times

vs.

g

ate resistor, inductive switchin

g

E

[mJ]

R

G

[ ]

Erec(on)

Eon

td(on)

tr

0246810

0

20

40

60

80

300

400

500

600

700

E

off

[mJ]

Eoff

Fig.9 Typ. turn-off energy, switching times

vs. gate resistor, inductive switching

R

G

[ ]

I

C

[A]

td(off)

tf

td(off)

tf

t

[ns]

t

[ns]

t

[ns]

t

[ns]

Z

thJC

[K/W]

I

C

=450A

V

CE

= 600 V

I

C

= 450 A

V

CE

= 600 V

V

GE

= ±15 V

T

VJ

= 125°C

I

C

= 450 A

V

CE

= 600 V

V

GE

=±15 V

T

VJ

=125°C

R

G

= 1.6

V

CE

=600 V

V

GE

= ±15 V

T

VJ

=125°C

R

G

= 1.6

V

CE

=600 V

V

GE

= ±15 V

T

VJ

=125°C

R

i

t

i

0.0093 0.002

0.0095 0.03

0.02 0.03

0.0212 0.08

IGBT

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified

MIXA450PF1200TSF

0.001 0.01 0.1 1 10

0.00

0.02

0.04

0.06

0.08

0.10

0.00.51.01.52.02.53.0

0

200

400

600

800

V

F

[V]

t[s]

I

F

[A]

Z

thJC

[K/W]

single pulse

T

J

= 125°C

T

J

=25°C

Fig. 1 Typ. Forward current

versus V

F

Fi

g

.7 T

y

p

. transient thermal im

p

edance

j

unctiontocase

Fig. 2 Typ. reverse recovery

characteristics

Fig. 4 Typ. reverse recovery

characteristics

Fig. 3 Typ. reverse recovery

characteristics

Fig. 6 Typ. recovery energy

E

rec

versus -di/dt

3000 4000 5000 6000

200

300

400

500

I

rr

[A]

di

F

/dt [A/μs]

10

1.6

4.7

3.3

3000 4000 5000 6000

350

400

450

500

550

t

rr

[ns]

di

F

/dt [A/μs]

1.6

10

4.7

3.3

0200400600800

0

20

40

60

80

100

Q

rr

[μC]

I

F

[A]

3000 4000 5000

16

18

20

22

24

26

28

di

F

/dt [A/μs]

I

f

=450 A

V

R

=600V

T

VJ

= 125°C

I

f

= 450 A

V

R

= 600 V

T

VJ

= 125°C

I

f

=450 A

V

R

= 600 V

T

VJ

= 125°C

E

rec

[mJ]

Fig. 5 Typ. reverse recovery

characteristics

0 200 400 600 800

200

300

400

500

I

rr

[A]

I

F

[A]

R

g

= 1.6

V

R

= 600 V

T

VJ

= 125°C

R

g

= 1.6

V

R

= 600 V

T

VJ

= 125°C

R

i

t

i

0.018 0.002

0.017 0.03

0.032 0.03

0.028 0.08

Diode

IXYS reserves the right to change limits, conditions and dimensions. 20121026aData according to IEC 60747and per semiconductor unless otherwise specified