Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1002MP
2 Watts, 35 Volts
Pulsed Avionics at 960-1215 MHz
GENERAL DESCRIPTION
The 1002MP is a COMMON BASE transistor capable of providing 2 Watts of
pulsed RF output power in the band 960 to 1215 MHz. This transistor is
specifically designed for pulsed Avionics amplifier application s. It utilizes gold
metallization and low thermal resistance packaging to provide high reliability
and supreme ruggedness.
CASE OUTLINE
55FW-1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipati on @ 25°C 7 W
Maximum Voltage and Current
Collector to Base Voltage (BVces) 50 V
Emitter to Base Voltage (BVebo) 3.5 V
Collector Current (Ic) 250 mA
Maximum Temperatures
Storage Tempera ture -40 to +150 °C
Operating Junction Temperature +200 °C
ELECTRICAL CHARACTERISTICS @ 25°C
SYMBOL CHARACTERISTICS TEST CONDITIONS MIN TYP MAX UNITS
Pout Power Output F = 1150 MHz 2.0 4 W
Pin Power Input 0.3 W
Pg Power Gain Vcc = 35 Volts 8.24 11 dB
ηc Collector Efficiency 45 %
VSWR Load Mismatch Tolerance Pulse widt h = 20 µs
LTDF = 1% 10:1
FUNCTIONAL CHARAC TERISTICS @ 25°C
BVebo Emitter to Base Breakdown Ie = 1 mA 3.5 V
BVces Collecto r to Emitter Breakdown Ic = 5 mA 50 V
hFE DC – Current Gain Vce = 5V, Ic = 100 mA 20
Cob Capacitance Vcb=35V, f=1MHz 2.2 5.0 pF
θjc1 Thermal Resistance 25 °C/W
Rev B: August 2010
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1002MP
Microsemi reserves the right to change, without notice, the specificat i o ns and info rmation contained he rei n. Visit
our web site at www.microsemi.com or contact our factory direct.
1002MP
