MMBTA42LT1 - ON Semiconductor

October, 2016 − Rev. 13

1Publication Order Number:

MMBTA42LT1/D

MMBTA42L, SMMBTA42L,

MMBTA43L

High Voltage Transistors

NPN Silicon

Features

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS

Characteristic Symbol Value Unit

Collector−Emitter Voltage

MMBTA42, SMMBTA42

MMBTA43

VCEO 300

200

Vdc

Collector−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

VCBO 300

200

Vdc

Emitter−Base Voltage

MMBTA42, SMMBTA42

MMBTA43

VEBO 6.0

6.0

Vdc

Collector Current − Continuous IC500 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 556 °C/W

Total Device Dissipation Alumina

Substrate (Note 2) TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RqJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

SOT−23 (TO−236)

CASE 318

STYLE 6

www.onsemi.com

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

1D M G

1D = MMBTA42LT, SMMBTA42L

M1E = MMBTA43LT

M = Date Code*

G= Pb−Free Package

(Note: Microdot may be in either location)

MARKING DIAGRAMS

M1E M G

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 3)

(IC = 1.0 mAdc, IB = 0) MMBTA42, SMMBTA42

MMBTA43

V(BR)CEO 300

200

−

Vdc

Collector−Base Breakdown Voltage

(IC = 100 mAdc, IE = 0) MMBTA42, SMMBTA42

MMBTA43

V(BR)CBO 300

200

−

Vdc

Emitter−Base Breakdown Voltage

(IE = 100 mAdc, IC = 0)

V(BR)EBO 6.0 −Vdc

Collector Cutoff Current

(VCB = 200 Vdc, IE = 0) MMBTA42, SMMBTA42

(VCB = 160 Vdc, IE = 0) MMBTA43

ICBO

−

0.1

mAdc

Emitter Cutoff Current

(VEB = 6.0 Vdc, IC = 0) MMBTA42, SMMBTA42

(VEB = 4.0 Vdc, IC = 0) MMBTA43

IEBO

−

0.1

mAdc

ON CHARACTERISTICS (Note 3)

DC Current Gain

(IC = 1.0 mAdc, VCE = 10 Vdc) Both Types

(IC = 10 mAdc, VCE = 10 Vdc) Both Types

(IC = 30 mAdc, VCE = 10 Vdc) MMBTA42, SMMBTA42

MMBTA43

hFE 25

−

Collector−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc) MMBTA42, SMMBTA42

MMBTA43

VCE(sat)

−

0.5

Vdc

Base−Emitter Saturation Voltage

(IC = 20 mAdc, IB = 2.0 mAdc)

VBE(sat) −0.9 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)

fT50 −MHz

Collector−Base Capacitance

(VCB = 20 Vdc, IE = 0, f = 1.0 MHz) MMBTA42, SMMBTA42

MMBTA43

Ccb

−

3.0

4.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

10010.1

100

hFE, DC CURRENT GAIN

1000

Figure 2. Collector−Emitter Saturation Voltage

vs. Collector Current

IC, COLLECTOR CURRENT (mA)

101

0.0

0.4

0.8

1.2

100

Figure 3. Base−Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

10010.1

0.2

0.8

1.0

Figure 4. Base−Emitter On Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (mA)

Figure 5. Base−Emitter Temperature

Coefficient

IC, COLLECTOR CURRENT (mA)

Figure 6. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

100

100.1

0.1

C, CAPACITANCE (pF)

100

TJ = 150°C

VCE = 10 V

25°C

−55°C

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.1

0.6

1.0

0.2

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

25°C

−55°C

0.6

0.4

0.1

0.7

0.9

0.5

0.3

VBE(on), BASE−EMITTER VOLTAGE (V)

10010.1

0.2

0.8

1.0

IC/IB = 10

150°C

25°C

−55°C

0.6

0.4

0.1

0.7

0.9

0.5

0.3

10010.1

−2.8

−2.0

qVB, TEMPERATURE COEFFICIENT (mV/°C)

VCE = 10 V

−55°C to 150°C

−0.4

−1.2

−2.4

−0.8

−1.6

qVB, for VBE

TJ = 25°C

f = 1 MHz

Cibo

Cobo

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

TYPICAL CHARACTERISTICS

Figure 7. Current−Gain — Bandwidth Product

IC, COLLECTOR CURRENT (mA)

101

fTau, CURRENT−GAIN BANDWIDTH (MHz)

100

VCE = 20 V

TJ = 25°C

Figure 8. Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (V)

101

0.001

IC, COLLECTOR CURRENT (A)

1000

10 ms

100

0.1

0.01

1.0 s

ORDERING INFORMATION

Device Order Number Package Type Shipping†

MMBTA42LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

SMMBTA42LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

MMBTA42LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

SMMBTA42LT3G SOT−23

(Pb−Free)

10,000 / Tape & Reel

MMBTA43LT1G SOT−23

(Pb−Free)

3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MMBTA42L, SMMBTA42L, MMBTA43L

www.onsemi.com

PACKAGE DIMENSIONS

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

SOT−23 (TO−236)

CASE 318−08

ISSUE AR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.

2. CONTROLLING DIMENSION: MILLIMETERS.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.

MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF

THE BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

SOLDERING FOOTPRINT*

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.000

b0.37 0.44 0.50 0.015

c0.08 0.14 0.20 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.30 0.43 0.55 0.012

0.039 0.044

0.002 0.004

0.017 0.020

0.006 0.008

0.114 0.120

0.051 0.055

0.075 0.080

0.017 0.022

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.027

0−−− 10 0 −−− 10

T____

TOP VIEW

SIDE VIEW

END VIEW

2.90

0.80

DIMENSIONS: MILLIMETERS

0.90

PITCH

3X 0.95

RECOMMENDED

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

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PUBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

MMBTA42LT1/D

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