2N3675 -2N3765 Numerical Index =| MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS a ~ ~ - EE] | REPLACE | PAGE Po |S} Ti | Vee | Voce |-2 tre @ Ie Versan @ Ie #/ tole TRE JE (S| ment | numaer | USE = 8 2 elm |B) 2/2 =| @25C | S| C | (volts) | (volts) | | (min) (max) S} (volts) s 3 5|s 2N3675 |S|]N PMS 8.8W | C |} 200 90 55 ]0 12 60 1.0A 0.8 1L.0A L.OM | T 2N3676 |S|N PMS | 8.8W]C | 200 90 90 {GO} 12) 60} 1.0A 0.8} L.0A 1L.OM4T 2N3677 | S| P CHP | 0.4w | A | 200 30 20 |o 5.0M | T 2N3678 | SIN HSS 0.8W | A | 200 75 55 | 0 40 | 120 | 0.15A 0.4} 0.154 250M |] T 2N3679 | Unijunction Transistor, see Table on Page 1-174 2N3680 | S|N DFA 0.3W | A {| 200 60 50 | O | 150 | 600 1Lo* 0.7 10M 300 /E 60M | T 2N3681 |S |N RFA 0.2W ] A | 200 10 7.0 ]0 20 | 220 2.0M 0.37 4.0M 20 ]E 1.06 |T 2N3682 | S|N RFA | 0.36W | A | 200 40 15 | 0 40] 120 10M 45 ]E 600M | T 2N3683 | S|N RFA Q.2W | A | 200 30 12/0 20 | 150 8.0M 30 ]E 1.06 }T 2N3684 thru Field Effect Transistors, see Table on Page 1-166 2N3687 2N3688 |S |N REC O.2wWw } A 1125 40 40 ]0 30 4.0M 400M | T 2N3689 |S] N RFC | 0.2w | A | 125 40 40,0] 30 4.0M 400M | T 2N3690 |} S|N RFC 0.2W | A] 125 40 40 ]0 30 4.0M 400M | T 2N3691 |S} N | MPS6512 5-109] AFC 0.2W | A | 125 35 20 ]0 40 | 160 10M 0.7 LOM 40 ]/E 200M | T 2N3692 |S} N | MPS6513 5-109} AFC 0.2W | A] 125 35 20 | O | 100 | 400 10M 0.7 10M 100 FE 200M 4 T 2N3693 )}S}N REC O.2W } A) 125 45 45 10 40 | 160 10M 200M ) T 2N3694 |S |N RFC O.2W | A] 125 45 45 | 0 4100 j 400 LOM 200M | T 2N3695 ghra 3 Field Effect Transistors, see Table on Page 1-166 N369. 2N3700 |S | N RFA O.5w | A | 200 140 80 | 0 | 100 | 300 1 0.154 0.2 | O.15A 80 |E 100M | T 2n3701 | 8 | N RFA | 0.5w]A|200| 140 | 80/0 | 40|120]0.15a | 0.2|0.15a | 30/8 | 8om|T 2N3702 |S | P AFC 0.3w | A | 150 40 25 |0 60 | 300 50M 0.25 50M 100M | T 2N3703 | Sj P AFC | 0.3W 7A | 150 50 30 |O | 30] 150 50M { 0.25 50M 100M | 2N3704 |S |N AFC | 0.36W {A | 150 50 30 | 0 | 100 | 300 50M 0.6 O.1A 100M | T 2N3705 |S |N AFC | 0,36W | A {150 50 30 | 0 50 | 150 50M 0.8 O.1A 100M | T 2N3706 |S |N AFC { 0.36W | A 1150 40 20 | 0 30 | 600 50M 1.0 O.1A 100M {[ T 2N3707 |S |N AFC | 0,25W | A | 150 30 30 | 0 | 100 j 400 O.1M 1.0 LOM 100 | E 2N3708 |S] N AFC | 0.25W | A | 150 30 30 10 45 | 660 1.0M 1.0 10M 45 /E 2N3709 |S]N AFC | 0.25W | A | 150 30 30 ]0 45 | 165 1.0M 1.0 10M 45 /E 2N3710 |S} N AFC | 0.25W | A | 150 30 30 10 90 | 330 1.0M 1.0 10M S0/E aNn3711 )S)N AFC ] 0.25W |} A ] 150 30 30 | O 1180 | 660 1.0M 1.0 10M 180 )E 2N3712 |S | N RFC 0.8W 1A | 200 150 150 | 0 30 | 150 30M 2.0 50M 25 |/E 40M] T 2N3713 |S |N 7-125 | HPA 150w | C | 200 80 60 | 0 25 75 1.04 1.0 5.0A 25 |E 30K | E 2N3714 |S |N 7-125 | HPA 150W | C } 200 100 80 | 0 25 75 1.0A 1.0 5.0A 25 /E 30K | E 2N3715 |S | N 7-125 | HPA 150W | C } 200 80 60 | 0 50 | 150 1,0A 0.8 5,04 25 /E 30K { E 2N3716 |S |N 7-125] HPA L50W | C } 200 100 80 | 0 50 | 150 1.04 0.8 5.0A 25 |[E 30K | E 2N3717 | S| N HPA 7.5W | C | 200 60 60 |S |2.0 | 100 O.5A 1.0 O.5A 250M | T 2N3718 |S |N HPA 10W | Cc | 200 60 60 7S | 2.0 | 100 O.5A 1.0 O.5A 250M | T 2N3719 |S7]P 7-129 PHS 6.0W | C | 200 40 40 10 25 | 180 1.0A LS O.3A 60M | T 2N3720 | S| P 7-129] PHA 6.0W | C | 200 60 60 | 0 25 | 180 1.0A L.5 3.0A 60M | T 2N3721 |S|N AFC O.2w }A |}125 18 18/0 60 | E 2N3722 |S |N MSS 0.8W | A | 200 80 60 | 0 40 | 150 O.1A 0,22 O.1A 300M [T 2N3723 |S] N HSS 0.8W | A | 200 100 80 | 0 40 | 150 O.1A 0.25 10M 300M | T 2N3724 | S/N HSS | 0.8W | A | 200 50 30 ]0 ; 607150] O.1A 0.2] O.1A 300M | T 2N3724A} S| N 8-257 | HSS lw jA 50 30 | 0 60 | 150 100M 0.2 100M 2N3725 |S|N HSS 0.8W ] A | 200 80 50 | 0 60 | 150 Q.1A 0.26 O.1A 300M) T 2N3725A) S | N 8-257] HSS W fA 80 50] 0 60 | 150 100M 0.26 100M 3/E 2N3726 |S] P DFA 0.4w | A | 200 45 45 | 0 |135 | 350 1.0M 0.25 50M 135 ]E 200M | T 2N3727 |S | P DFA 0.4w | A { 200 45 45 | 0 1135 | 350 L.0M 0.25 50M 135 }E 200M | T 2N3728 |S|N DFA | 0.45wW | A | 200 60 30 | 0 80 | 280 | 0.154 0.221) 0.154 50 |E 250M | T 2N3729 | S|N DFA | 0.45w | A | 200 60 30 | 0 80 | 280 | 0.154 0.22 10.154 SO TE 250M | T 2N3730 |G] P 8-259] LPA 10w | A | 100 200 200 |S 2N3731 |G] P 8-259] LPA 5.0W | A | 100 320 320 15 15 6.0A 2N3732 | G| P 8-259 , LPA 3,0W | A | 100 100 100 {$s 35 | 500 O.7A 1.0M | T 2N3733 |S | N 9-82 HPA 23wW | Cc } 200 65 40 |0 LO | 150 | 0.254 1.0 1.0A 250M | T 2N3734 |S |N 8-259] HSS 1,0W | A | 200 50 30 | O 30 | 120 1.04 0.2 10M 300M | T 2N3734A] S | N 8-259| HSS] 1.OW]A 50 30 | 0} 30]120] 1.0A 0.9} 1.0A | 2.5]E 2N3735 | S| N 8-259] HSS 1.0Ww | A | 200 75 50] 0 20 80 1.0A 0.2 LOM 250M | T 2N3735A| S | N 8-259] HSS LOW sA 75 50/0 20 80 1.04 0.9 1.0A 2.5/E 2N3736 {S| N 8-259] HSS O.5wW | A | 200 50 30 1)0 30 | 120 1,04 0.2 10M 300M | T 2N3736A) S| N 8-259] HSS O.SW TA 50 30] 0 30 | 120 L.OA 0.9 LOA 2.5) 2N3737 }SIN 8-259 | HSS O.5W ) A | 200 75 50 790 20 80 L.OA 0.2 10M 250M | T 2N3737A) S| N 8-259] HSS O.SW IA 75 50 | 0 20 80 1.04 0.9 1.04 2.575 2N3738 |S] N 7-133 | LPA 20W | Cc | 175 250 225/10 40 | 200 O.1A 2.5] 0.25A 35 ]E 15M{T 2N3739 | S|N 7-133 | LPA 20W | C | 175 325 300 | 0 40 | 200 O.1A 2.510.254 35) E LSM] T 2N3740 | S| P 7-137 | LPA 25w ;C | 200 60 60/0 30 | 100 | 0.25Aa 0.6 1.04 25/E 4.0M} T 2N3741 |S] P 7-137 | LPA 25W }C | 200 80 80 40 30 | 100 | 0.25A 0.6 1.0A 25]E 4.0M|T 2N3742 | S| N 8-265] VID 1.0W | A [200 | 300 | 300 | 0 | 20 | 200 30M 1.0 10M 20]; E 30M | T 2N3743 |S | P 8-269] vin] 1.ow}A}200} 300 | 300]0] 25 } 250 30M 5.0 10M 30] E 30M | T 2N3744 |S) N HPA 30W | C } 200 60 40] 0 20 60 1.04 0.25 1.0A 20/5 30M | T 2N3745 | S| N HPA 30W | C | 200 80 60/0} 20] 60}; 1.0A] 0.25] 1.04 20], E 30M | T 2N3746 1 S[N HPA 30W | C | 200 100 80) 0 20 60 L.OA 0,25 1L.OA 20} E 30M] T 2N3747 | S| N HPA 30W | C | 200 60 4010 40 | 120 1.0A 0.25 1.0A 40]/E 40M | T 2N3748 |S |N HPA 30w | C | 200 80 60 | 0 40 | 120 L.0A 0.25 1.04 40] E 40M | T 2N3749 | S| N HPA 30W | Cc | 200 100 80 | 0 40 | 120 1.0A 0.25 1L.0A 40/E 40M | T 2N3750 1S | N HPA 30W | C 1 200 60 40 ]0 ]100 | 300} 1.0A } 0.25] 1.0A |] 100] E 50M | T 2N3751 |S] N HPA 30W | C | 200 80 60 |O f100] 300] 1.0A] 0.25] 1.0A] 100] E 50M | T Onaga Sy N HPA 30w } C | 200 100 80 | 0] 100 |) 300 1.0A 0.25 1.0A 100) E 50M | T N thru Thyristors, see Table on Page 1-154 2N3761 2N3762 | S| P 8-273] HSS 1.0W | A | 200 40 40] 0 30 | 120 1.04 o.1 10M 180M {| T 2N3763 | S| P 8-273] HSS 1.0W | A | 200 60 60 | 0 20 80 1.0A 0.1 10M 150M} T 2N3764 |S] P 8-273] HSS O.5W | A | 200 40 4010 30 | 120 1.0A O.1 10M 180M | T 2N3765 |S | P 8-273 | HSS O.5wW fA | 200 60 60 | 0 20 80 1.0A O.1 10M 150M | T 1-142KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765Switching and General Purpose Transistors 2N3724, 2N3725 2N4013, 2N4014 (continued) ELECTRICAL CHARACTERISTICS (1, = 25C unless otherwise noted) Characteristic Symbol | Min | Max | Unit ON CHARACTERISTICS (continued) Collector-Emitter Saturation Voltage* Vor(sat)* Vdc a, = 10 mAdc, Ig = 1.0 mAdc) - 0, 25 I. = mAdc, I, = mAdc N 2N - . Cc 100 B 10 mA 2N3724, 2N4013 0.20 2N3725, 2N4014 - 0.26 Mp = 300 mAdc, I3e 30 mAdc) 2N3724, 2N4013 - 0.32 2N3725, 2N4014 - 0.40 (lg = 500 mAdc, I, = 50 mAdc) 2N3724, 2N4013 - 0. 42 2N3725, 2N4014 - 0. 52 de = 800 mAdc, I, = 80 mAdc) 2N3724, 2N4013 - 0. 65 2N3725, 2N4014 - 0. 80 (I, = 1.0 Ade, I,, = 100 mAde) 2N3724, 2N4013 - 0.75 2N3725, 2N4014 - 0.95 Base-Emitter Saturation Voltage* Vv * Vdc (I, = 10 mAde, Tg = 1.0 mAde) BE(sat) - 0.76 (a mAdc, I, = mAdc - . c 100 B 10 mA 0. 86 Co = 300 mAdc, I, = 30 mAdc) - 11 Gy = 500 mAdc, Ip 50 mAdc) 0.9 1.2 dg = 800 mAdc, Int 80 mAdc) - 1.5 My = 1,0 Ade, 1, = 100 mAdc) - 1.7 SMALL-SIGNAL CHARACTERISTICS Current-GainBandwidth Product fp MHz a, = 50 mAdc, Vor = 10 Vdc, f = 100 MHz) 300 - Output Capacitance Cob pF (Vop = 10 Vdc, Ip = 0, f = 140 kHz) 2N3724, 2N4013 - 12 2N3725, 2N4014 - 10 Input Capacitance Ciy pF (Var = 0.5 Vdc, Ine 0, f = 140 kHz) - 55 SWITCHING CHARACTERISTICS Turn-On Time ton - 35 ns (Vaan = 30 Vde, Vip = 3,8 Vdc 5 cc > "BE (aff) ; _ Delay Time Ig = 500 mAde, I; = 50 mAdc) a *0 ns Rise Time (See Figure 1) t. - 30 ns Turn-Off Time tote - 60 ns (Vog = 30 Vde, I, = 500 mAdc, Storage Time ~ . t - 50 ns 31 =lp2 = 50 mAdc) s Fall Time (See Figure 1) 2N3724, 2N4013 te - 25 ns 2N3725, 2N4014 - 30 * Pulse Test: Pulse Width = 300 us, Duty Cycle = 1.0%. FIGURE 1 SWITCHING TIMES TEST CIRCUIT +30Vv < > 15 -3.8V > 1.0 PF ( (o TO SAMPLING OSCILLOSCOPE 1.0k e 4 7 | Zin & 100 k22 TL t< 1.0 ns Vin = 19-7 1.0 BF 100 PULSE GENERATOR . t,. tp < 1.0ns 62 PW. ~ 1.0 ps Zin = 80.Q + == D.C. < 2.0% - ~ 8-258 Switching and General Purpose Transistors 2Na/ 34 (SILICON) Vero = 30-50 V 2n3/735 C. = 9 pF(max) 2N3736 anol a7 Medium current NPN silicon annular transistor, de- signed for high-speed switching and driver applications. Collector connected to case CASE 26 CASE 31 (TO-46) (10-5) MAXIMUM RATINGS (Ta= 25C unless otherwise noted) . 2N3734 | 2N3735 : Rating Symbol 2N3736 | 2N3737 Unit Collector-Base Voltage Vos 50 75 Vdc Collector-Emitter Voltage Vero 30 50 Vde Emitter-Base Voltage VEB 5 Vde Collector Current Ic 1.5 Adc TO-5 T0-46 2N3734 | 2N3736 2N3735 | 2N3737 Total Device Dissipation @ Ta = 25C | Pp 1.0 0.5 watt Derating Factor Above 25C 5.71 2.86 | mw/C Total Device Dissipation@ Tg = 25C| Pp 4.0 2.0 Watts Derating Factor Above 25C 22.8 11.4 mW/C Thermal Resistance C/mw Junction to Air OJA 0.175 0.35 Junction to Case 9 3c 0.044 0.088 Junction Temperature, Operating Ty +200 oC Storage Temperature Range Tstg -65 to +200 ae 8-259 Switching and General Purpose Transistors 2N3734, 2N3735, 2N3736, 2N3737 (continued) ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic | Symbol [Min|Max| Unit] OFF CHARACTERISTICS Collector-Base Breakdown Voltage BVoBO Vde (Ig = 10 pAde, Ip = 0) 2N3734, 2N3736 50, 2N3735, 2N3737 mB) Collector-Emitter Breakdown Voltage* BVcEo* Vde (Ic = 10 mAde, Tp = 0) 2N3734, 2N3'736 30; 2N3735, 2N3737 50; Emitter-Base Breakdown Voltage BVEBO Vde (Ig = 10 pAde, Ig = 0) 5 _- Collector Cutoff Current Iorx pAdc 25 Vdc, VER = 2 Vdc) 2N3734, 2N3736 ~| 0.20 25 Vdc, Vp = 2 Vde, Ta = 100C) ! 20 40 Vdc, Vep = 2 Vde) 2N3735, 2N3737 /| 0.20 40 Vdc, Vpp = 2 Vdc, Ta = 100C) | 20 a Qa Bi Wt a Qa 1c} ud Base Cutoff Current Ipi pAdc (Vogp = 25 Vde, Vpp = 2 Vdc) 2N3734, 2N3'736 _ (VoR = 40 Vde, Vp, = 2 Vdc) 2N3735, 2N3737 _ ON CHARACTERISTICS DC Current Gain* hpp* _ 10 mAdc, Vor = 1 Vdc) 35 _ 150 mAdc, Vor = 1 Vdc) 40 _ 500 mAdc, Vo = 1 Vde) 35 _ 1 Ade, Vogp cA 5 Vdc) 2N3734, 2N3736 30 | 120 2N3735, 2N3737 20 = 1.5 Ade, Vogp = 5 Vdc) 2N3734, 2N3736 30 2N3735, 2N3737 20 aa tou ow a a a H 11 8 Collector Saturation Voltage* VcE(sat)* vde (Ic = 10 mAde, Ip = 1 mAdc) _ (Ic = 150 made, ip = 15 mAdc) _ (I = 500 mAdc, Ip = 50 mAdc) _ (i = 1 Adc, Ip = 100 mAdc) Seoos on wiv Base-Emitter Saturation Voltage* VeE(sat)* Vde (Io 10 mAdc, Ip = 1 mAdc) (Ig 150 mAdc, Ip = 15 mAdc) (Ig = 500 mAdc, I, = 50 mAde) (Ig = 1 Adc, Ip = 100 mAdc) DYNAMIC CHARACTERISTICS tt Qo old | yee OO BY Oa non ot Output Capacitance Cop pF (Von = 10 Vde, Ip = 0, f = 100 kHz) | 9 Input Capacitance Cip pF (Vir = 0.5 Vde, Iq = 0,f = 100 kHz) t{ 80 High-Frequency Current Gain hee _ (Ig = 50 mAdc, Veg = 10 Vdc, f = 100 MHz) 2.5 _ Delay Time (Voc = 30 V,VaR(ott) =2V, ty | 8] ns I = 1 Amp, Ipy = 100 mA) t Rise Time Storage Time Voc = 30V,I = 1 Amp, Ipi = -Igg = 100 mA) Fall Time Total Control Charge Qy nc (Ig = 1 Amp, Ip = 100 mA, Vag = 30 V) | 10 *Pulse Test: PW < 300 1s, Duty Cycle = 2% 8-260 Swifching and General Purpose Transistors 2N3734, 2N3735, 2N3736, 2N3737 (continued) ON CONDITION CHARACTERISTICS OC CURRENT GAIN Voe=1V ~ Vee =10 ~e fee, CURRENT GAIN 1.0 2.0 5.0 10 20 50 100 200 500 1000 te, COLLECTOR CURRENT imA) COLLECTOR SATURATION REGION This graph shows the effect of base current on collector current. Bo (cur- Tent gain at the edge of saturation) is the current gain of the transistor at 1 volt, and Mr (forced gain) is the ratio of I/Ipe in a circuit. EXAMPLE: For type 2N3734, estimate a base current (Ipp) to insure saturation at a temperature of 25C and a collector current of 500 mA. Observe that at lc = 500 mA an overdrive factor of at teast 2.0 is required to drive the transistor well into the saturation region. From Figure 1, it is seen that hee @ 1 volt is typically 54 (guaranteed limits from the Table of Char- acteristics can be used for worst-case design). .. Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) Bo _ hre@1Valt _ 54 _ Br Icllae f= TomAlIgp (ar ~~ 18S mAtyp 1 2 3 4 5 Bo/Bs, OVERDRIVE FACTOR ON VOLTAGES TEMPERATURE COEFFICIENTS +20 +8 100C TO 175C TO 100C i= _ Vecjeat) lo/lp = 10 +10 g.. For Veetust g 405 85C TO 25C 8 Ver@Vcg=1 & = = 0 3 2 x & -05 - 25C TO 175C -10 85C TO 25C -15 Veeiun bc/le = 10 ~20 10 2 30 50 100 200 300 500 1000 0 100 200 300 400 500 600 700 800 900 100 lc, COLLECTOR CURRENT (mA) lc, COLLECTOR CURRENT (mA) 8-261 Switching and General Purpose Transistors 2N3734, 2N3735, 2N3736, 2N3737 (continued) LARGE SIGNAL CHARACTERISTICS TRANSCONDUCTANCE INPUT ADMITTANCE 1000 700 es 300 200 Ty = 175 25C 70 Ig, BASE CURRENT (mA) Ic, COLLECTOR CURRENT (mA) 3 50 30 20 10 0 02 04 06 08 10 12 0 0.2 0.4 0.6 08 10 12 Vee, BASE-EMITTER VOLTAGE (VOLTS) Vee, BASE-EMITTER VOLTAGE (VOLTS) OFF CONDITION CHARACTERISTICS TRANSCONDUCTANCE EFFECT OF BASE-EMITTER RESISTANCE 103 Vee = 30V Vee = 30V Ty = 175C 102 5 Pa 10 = Ty = 100C = 3 S 5 s y y 3 3 : oO LO ad 9 19-' FORWARD 10-2 02 ol 0 0.1 02 03 o4 605 103 10 10 106 107 Vee, BASE-EMITTER VOLTAGE (VOLTS) Rae, EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 8-262 Switching and General Purpose Transistors 2N3734, 2N3735, 2N3736, 2N3737 (continued) SWITCHING CHARACTERISTICS T,=25C == T,=150C TURN-ON TIME RISE AND FALL TIMES lef = 10 2 2 z = = - td Vos = =2V 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 te, COLLECTOR CURRENT (mA) le, COLLECTOR CURRENT (mA) STORAGE TIME FALL TIME bas = Ip2 ti~t ht lefty = 20 3 2 = z = lolly = 10 3 le/la= 10 5 z 2 oF 10 20 50 100 200 500 1000 10 20 50 100 200 500 1000 lc, COLLECTOR CURRENT (mA) Je, COLLECTOR CURRENT (mA? SWITCHING TIME EQUIVALENT TEST CIRCUITS TURN-ON TIME TURN-OFF TIME P. W. = 200 ns ov Onn oo RISE TIME =<2n5 300 +30V 40 DUTY CYCLE=2% +1L1V bo 1002 SCOPE 10 < t, < 500 us te < Sns Gy te 2 > lus DUTY CYCLE = 2% ~4V o SCOPE Vin owwf Vin 1002 8-263 Switching and General Purpose Transistors 2N3734, 2N3735, 2N3736, 2N3737 (continued) Q, CHARGE in} Ic, COLLECTOR CURRENT {AMPS} CHARGE DATA CAPACITANCE Veo = 30 lo/ly = 10 Ty = 25C a= Th = 150C CAPACITANCE (pF) 20 50 100 200 500 1000. OL 0.2 05 10 2.0 5.0 10 20 50 Ic, COLLECTOR CURRENT (mA) REVERSE BIAS (VOLTS) ACTIVE REGION SAFE OPERATING AREAS The Safe Operating Area Curves indicate Ic-Vce limits below which the devices will not go inte secondary break- down. As the safe operating areas shown are independent of temperature and duty cycle, these curves can be used as Jong as thermat resistance (Max rating table) is also taken 2N3734-2N3736 into consideration to insure operation below the maximum 2N3735, 2N3737 junction temperature. 10 20 30 40 50 Vee, COLLECTOR-EMITTER VOLTAGE (VOLTS) 8-264