ATF-58143
Low Noise Enhancement Mode Pseudomorphic HEMT
in a Surface Mount Plastic Package
Data Sheet
Description
Avago Technologies’ ATF-58143 is a high dynamic
range, low noise E-PHEMT housed in a 4-lead SC-70
(SOT-343) surface mount plastic package.
The combination of high gain, high linearity and low
noise makes the ATF-58143 ideal as low noise ampli-
er for cellular/PCS/WCDMA base stations, wireless lo-
cal loop, and other applications that require low noise
and high linearity performance in the 450 MHz to 6 GHz
frequency range.
Surface Mount Package SOT-343
Features
Low noise and high linearity performance
Enhancement Mode Technology[1]
Excellent uniformity in product speci cations
Low cost surface mount small plastic package SOT-
343 (4 lead SC-70) in Tape-and-Reel packaging option
available
Lead-free option available
Speci cations
2 GHz; 3V, 30 mA (Typ.)
30.5 dBm output 3rd order intercept
19 dBm output power at 1 dB
0.5 dB noise  gure
16.5 dB associated gain
Applications
Q1 LNA for cellular/PCS/WCDMA base stations
Q1, Q2 LNA and Pre-driver ampli er for 3–4 GHz WLL
Other low noise and high linearity applications at 450
MHz to 6 GHz
Note:
1. Enhancement mode technology requires positive Vgs, thereby
eliminating the need for the negative gate voltage associated with
conventional depletion mode devices.
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation and identi cation
“8F” = Device Code
“x” = Date code character
identi es month of manufacture.
SOURCE
DRAIN
GATE
SOURC
E
8Fx
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Technologies Application Note A004R:
Electrostatic Discharge Damage and Control.
2
ATF-58143 Absolute Maximum Ratings[1]
Symbol Parameter Units AbsoluteMaximum
VDS Drain-SourceVoltage[2] V5
VGS Gate-SourceVoltage[2] V -5to1
VGD GateDrainVoltage[2] V -5to1
IDS DrainCurrent[2] mA 100
Pdiss TotalPowerDissipation[3] mW 500
Pinmax. RF InputPower
(Vds=3V , Ids =30mA)
(Vds=0V, Ids=0mA)
(Vds=4V, Ids=30mA)
dBm
dBm
dBm
+20
+20
+20
IGS GateSourceCurrent mA 2[5]
TCH ChannelTemperature °C 150
TSTG StorageTemperature °C -65to150
θjc ThermalResistance[4] °C/W 162
Notes:
1. Operation of this device above any one of these parameters may
cause permanent damage.
2. Assumes DC quiescent conditions.
3. Source lead temperature is 25°C. Derate 6.2 mW/°C for TL > 33°C.
4. Thermal resistance measured using 150°C Liquid Crystal Measure-
ment method.
5. The device can handle +13 dBm RF Input Power provided I
GS
is limited
to 2 mA. I
GS
at P
1dB
drive level is bias circuit dependent. See applications
section for additional information.
Product Consistency Distribution Charts[6, 7]
Figure 1. Typical I-V Curves (V
GS
=0.1V per step)
V
DS
(V)
I
DS
(mA)
071 2 3 4 5 6
120
100
80
60
40
20
0
0.7V
0.6V
0.5V
0.4V
0.3V
-150
-125
-100
-75
-50
-25
0
0.3 0.4 0.5 0.6
NF (dB)
0.7 0.8
Cpk=2.735
Stdev=0.049
Figure 2. NF @ 3V, 30 mA.
USL = 0.9, Nominal = 0.5
GAIN (dB)
15 16 17 18
Cpk=1.953
Stdev=0.2610
Figure 3. Gain @ 3V, 30 mA.
USL = 18.5, LSL = 15, Nominal = 16.5
OIP3 (dBm)
28 29 30 31 32 3433
Cpk=1.036
Stdev=0.509
Figure 4. OIP3 @ 3V, 30 mA.
LSL = 29, Nominal = 30.5
Notes:
6. Distribution data sample size is 500 samples taken from 3 di erent wafers. Future wafers allocated to this product may have nominal values
anywhere between the upper and lower limits.
7. Measurements made on production test board. This circuit represents a trade-o between an optimal noise match and a realizeable match based
on production test equipment. Circuit losses have been de-embedded from actual measurements.
3
ATF-58143 Electrical Speci cations
TA = 25°C, RF parameters measured in a test circuit for a typical device
Symbol Parameter and Test Condition Units Min. Typ.[2] Max.
Vgs Operational Gate Voltage Vds = 3V, Ids = 30 mA V 0.4 0.51 0.75
Vth Threshold Voltage Vds = 3V, Ids = 4 mA V 0.18 0.38 0.52
Idss Saturated Drain Current Vds = 3V, Vgs = 0V μA — 1 5
Gm Transconductance Vds = 3V, mmho 230 410 560
gm = Idss/Vgs;
Vgs = 0.75 – 0.7 = 0.05V
Igss Gate Leakage Current Vgd = Vgs = -3V μA — — 200
NF Noise Figure [1] f = 2 GHz Vds = 3V, Ids = 30 mA dB — 0.5 0.9
f = 900 MHz Vds = 3V, Ids = 30 mA dB — 0.3 —
f = 2 GHz Vds = 4V, Ids = 30 mA dB — 0.5 —
f = 900 MHz Vds = 4V, Ids = 30 mA dB — 0.3 —
Ga Associated Gain[1] f = 2 GHz Vds = 3V, Ids = 30 mA dB 15 16.5 18.5
f = 900 MHz Vds = 3V, Ids = 30 mA dB — 23.1 —
f = 2 GHz Vds = 4V, Ids = 30 mA dB — 17.7 —
f = 900 MHz Vds = 4V, Ids = 30 mA dB — 22.5 —
OIP3 Output 3rd Order f = 2 GHz Vds = 3V, Ids = 30 mA dBm 29 30.5 —
Intercept Point[1] f = 900 MHz Vds = 3V, Ids = 30 mA dBm — 28.6 —
f = 2 GHz Vds = 4V, Ids = 30 mA dBm — 31.5 —
f = 900 MHz Vds = 4V, Ids = 30 mA dBm — 31.0 —
P1dB 1dB Compressed f = 2 GHz Vds = 3V, Ids = 30 mA dBm — 19 —
Output Power[1] f = 900 MHz Vds = 3V, Ids = 30 mA dBm — 18 —
f = 2 GHz Vds = 4V, Ids = 30 mA dBm — 21 —
f = 900 MHz Vds = 4V, Ids = 30 mA dBm — 19 —
Notes:
1. Measurements obtained using production test board described in Figure 5.
2. Typical values determined from a sample size of 500 parts from 3 wafers.
Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB and OIP3 measurements. This circuit represents a
trade-o between an optimal noise match and associated impedance matching circuit losses.
RFin
RFout
output
matching
0.7 dB loss
input
matching
0.6 dB loss
28.2 + j9.4 51 – j3.3
4
ATF-58143 Typical Performance Curves
3V
4V
3V
4V
3V
4V
3V
4V
Figure 7. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Ids (mA)
Fmin (dB)
07010 20 30 40 50 60
0.7
0.6
0.5
0.4
0.3
0.2
Figure 8. Fmin vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Ids (mA)
Fmin (dB)
07010 20 30 40 50 60
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
Figure 9. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Ids (mA)
GAIN (dB)
07010 20 30 40 50 60
19
18
17
16
15
14
13
12
Figure 10. Gain vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Ids (mA)
GAIN (dB)
07010 20 30 40 50 60
25
24
23
22
21
20
19
18
Figure 11. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
Ids (mA)
OIP3 (dBm)
07010 20 30 40 50 60
42
37
32
27
22
17
12
3V
4V
Figure 12. OIP3 vs. Ids and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
Ids (mA)
OIP3 (dBm)
07010 20 30 40 50 60
40
35
30
25
20
15
3V
4V
Figure 6. Close-up of Production Test Board.
C4
J2
C2 L1 C5
ATF-58143
S
AVAGO
TECHNOLOGIES
C3
J1
G
S
C1
R1
C1 : 2.7 pF Cap (0603)
: 1 pF Cap (0603)
: 1200 pF Cap (0603)
: 120 pF Cap (0402)
: 1200 pF Cap (0603)
: 49.9 Ohm (0603)
: 56 nH (0603)
: 0 Ohm, Jumper (0805)
: 0 Ohm, Jumper (0805)
: 0 Ohm, Jumper (0402)
: 0 Ohm, Jumper (0402)
C2
C3
C4
C5
R1
L1
J1
J2
J3
J4
A
5
ATF-58143 Typical Performance Curves, continued
Figure 13. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 2 GHz.
[1]
Idq (mA)
P1dB (dBm)
07010 20 30 40 50 60
24
22
20
18
16
14
12
3V
4V
Figure 14. P1dB vs. Idq and Vds Tuned for
Max OIP3 and Fmin at 900 MHz.
[1]
Idq (mA)
P1dB (dBm)
07010 20 30 40 50 60
23
22
21
20
19
18
17
16
15
3V
4V
Figure 15. Fmin vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
FREQUENCY (GHz)
Fmin (dB)
061 2 3 4 5
1.5
1.0
0.5
0
25°C
-40°C
85°C
25°C
-40°C
85°C
Figure 16. Gain vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
Note:
1. When plotting P1dB, the drain current was
allowed to vary dependent on the RF input power.
FREQUENCY (GHz)
GAIN (dB)
062 3 4 51
30
25
20
15
10
5
Figure 17. OIP3 vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
FREQUENCY (GHz)
OPI3 (dBm)
062 3 4 51
35
30
25
20
15
10
Figure 18. P1dB vs. Frequency and Temp.
Tuned for Max OIP3 and Fmin at 3V, 30 mA.
FREQUENCY (GHz)
P1dB (dBm)
0623451
20.0
19.5
19.0
18.5
18.0
17.5
17.0
16.5
16.0
25°C
-40°C
85°C
25°C
-40°C
85°C
6
ATF-58143 Typical Scattering Parameters, VDS = 3V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.98 -17.1 27.29 23.14 168.7 -40.10 0.010 80.8 0.67 -12.1 33.69
0.5 0.81 -92.0 25.25 18.31 123.7 -28.10 0.039 45.7 0.42 -46.6 26.68
0.9 0.75 -126.4 21.87 12.40 103.4 -26.12 0.049 34.8 0.32 -66.7 23.99
1.0 0.73 -132.2 21.18 11.46 99.8 -25.87 0.051 33.4 0.31 -72.3 23.52
1.5 0.69 -153.2 18.38 8.31 85.1 -24.70 0.058 29.4 0.25 -90.8 21.54
1.9 0.66 -165.9 16.74 6.88 75.4 -23.86 0.064 27.4 0.23 -103.6 20.30
2.0 0.65 -169.3 16.40 6.61 73.1 -23.65 0.066 26.9 0.22 -106.0 20.03
2.5 0.63 176.3 14.83 5.51 61.9 -22.71 0.073 24.4 0.19 -118.1 18.77
3.0 0.61 160.7 13.51 4.74 50.9 -21.87 0.081 21.1 0.17 -133.3 17.69
3.5 0.61 147.4 12.35 4.15 40.4 -21.10 0.088 17.7 0.15 -145.4 16.73
4.0 0.62 133.8 11.28 3.66 30.2 -20.45 0.095 13.5 0.13 -155.7 15.86
4.5 0.64 123.7 10.32 3.28 20.5 -19.86 0.102 9.3 0.13 -175.4 15.09
5.0 0.66 112.5 9.41 2.96 11.1 -19.39 0.107 4.9 0.13 166.2 14.40
5.5 0.68 103.7 8.61 2.70 2.1 -18.87 0.114 0.7 0.14 152.8 13.74
6.0 0.69 93.0 7.84 2.47 -7.3 -18.44 0.120 -4.4 0.14 140.7 13.14
7.0 0.71 77.2 6.47 2.11 -24.8 -17.63 0.131 -14.6 0.17 120.7 12.06
8.0 0.74 58.3 5.14 1.81 -43.1 -17.13 0.139 -26.1 0.19 95.4 11.14
9.0 0.78 39.7 3.77 1.54 -60.7 -16.67 0.147 -37.0 0.24 70.1 10.22
10.0 0.84 25.1 2.55 1.34 -78.8 -16.21 0.155 -50.2 0.34 52.4 9.39
11.0 0.87 10.2 1.25 1.16 -97.1 -16.04 0.158 -64.2 0.41 37.3 8.65
12.0 0.89 -3.9 0.19 1.02 -114.0 -15.72 0.164 -78.3 0.46 21.5 7.96
13.0 0.90 -20.0 -1.09 0.88 -132.2 -15.86 0.161 -93.6 0.52 2.5 7.39
14.0 0.93 -31.4 -2.53 0.75 -148.3 -16.22 0.154 -106.5 0.58 -14.1 6.85
15.0 0.96 -43.9 -4.00 0.63 -162.8 -16.73 0.146 -118.2 0.66 -26.0 6.36
16.0 0.94 -54.2 -5.46 0.53 -176.5 -17.15 0.139 -128.6 0.72 -36.3 5.85
17.0 0.96 -65.1 -7.14 0.44 168.6 -17.68 0.131 -142.4 0.74 -49.0 5.27
18.0 0.93 -79.8 -8.81 0.36 153.8 -18.36 0.121 -155.6 0.77 -64.8 4.77
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.12 0.39 17.775 0.04 25.33
0.9 0.18 0.37 46.9 0.04 22.26
1.0 0.20 0.36 53.525 0.04 21.54
1.5 0.32 0.32 80 0.04 19.16
1.9 0.43 0.30 101 0.04 17.65
2.0 0.45 0.30 107.7 0.04 17.33
2.4 0.51 0.29 125.2 0.04 16.23
3.0 0.58 0.31 154.475 0.05 14.77
3.9 0.75 0.35 -156.95 0.06 13.39
5.0 0.87 0.42 -120.93 0.09 11.92
5.8 1.01 0.50 -100.83 0.15 11.07
6.0 1.04 0.53 -97.15 0.18 10.93
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 3V, IDS = 30 mA
Figure 19. MSG/MAG and S
21
vs. Frequency
at 3V, 30 mA.
FREQUENCY (GHz)
MSG/MAG and S21 (dB)
02010 155
40
35
30
25
20
15
10
5
0
-5
-10
-15
S21
MSG
7
ATF-58143 Typical Scattering Parameters, VDS = 4V, IDS = 30 mA
Freq. S11 S21 S12 S22
MSG/MAG
GHz Mag. Ang. dB Mag. Ang. dB Mag. Ang. Mag. Ang. dB
0.1 0.99 -16.3 28.16 25.6 169.65 -41.08 0.01 81.1 0.65 -10.17 34.62
0.5 0.83 -94.5 25.82 19.5 125.68 -28.95 0.04 46.2 0.45 -54.83 27.39
0.9 0.76 -133.1 22.52 13.4 104.58 -27.00 0.04 33.9 0.33 -76.45 24.76
1 0.75 -139.7 21.83 12.3 100.73 -26.74 0.05 32.0 0.31 -80.28 24.29
1.5 0.72 -162.2 18.94 8.9 85.42 -25.79 0.05 26.9 0.24 -95.17 22.37
1.9 0.71 -172.7 17.18 7.2 75.68 -25.25 0.05 24.8 0.21 -104.27 21.21
2 0.70 -174.9 16.79 6.9 73.47 -25.09 0.06 24.4 0.21 -106.18 20.94
2.5 0.69 173.5 14.67 5.4 59.58 -24.15 0.06 21.7 0.18 -117.35 19.41
3 0.68 161.6 13.05 4.5 46.88 -23.33 0.07 19.0 0.16 -124.85 18.19
4 0.67 141.9 11.00 3.5 28.55 -22.14 0.08 14.1 0.13 -137.33 16.57
5 0.69 123.1 9.29 2.9 10.32 -21.13 0.09 7.3 0.12 -42.65 15.21
6 0.73 108.9 7.73 2.4 -7.48 -20.28 0.10 -1.3 0.13 158.73 14.00
7 0.76 96.3 6.16 2.0 -23.78 -19.80 0.10 -9.7 0.17 125.87 12.98
8 0.79 82.4 4.74 1.7 -39.33 -19.32 0.11 -16.9 0.20 104.88 12.03
9 0.82 71.2 3.63 1.5 -55.93 -18.49 0.12 -26.7 0.25 83.12 11.06
10 0.85 60.1 2.63 1.4 -73.30 -17.74 0.13 -39.3 0.31 61.03 10.19
11 0.87 47.2 1.52 1.2 -90.53 -17.31 0.14 -52.2 0.38 41.33 9.42
12 0.89 36.2 0.38 1.0 -106.67 -17.12 0.14 -64.5 0.44 22.65 8.75
13 0.91 26.6 -0.80 0.9 -121.58 -17.09 0.14 -75.2 0.49 6.28 8.15
14 0.93 17.2 -2.01 0.8 -135.15 -17.15 0.14 -84.2 0.54 -7.48 7.57
15 0.94 9.2 -3.24 0.7 -148.98 -17.22 0.14 -94.3 0.59 -22.78 6.99
16 0.94 1.2 -4.43 0.6 -164.25 -17.36 0.14 -106.1 0.64 -39.22 6.46
17 0.92 -10.5 -5.79 0.5 -59.55 -17.68 0.13 -119.3 0.68 -53.35 5.94
18 0.91 17.6 -6.74 0.5 170.70 -17.94 0.13 -127.5 0.69 -71.73 5.60
Freq Fmin Γopt Γopt Rn/50 Ga
GHz dB Mag. Ang. dB
0.5 0.14 0.38 9.7 0.03 24.85
0.9 0.23 0.36 44.4 0.04 22.21
1.0 0.25 0.35 54.0 0.04 21.51
1.5 0.35 0.32 78.7 0.04 19.21
1.9 0.47 0.3 100.7 0.04 17.71
2.0 0.49 0.3 105.4 0.04 17.39
2.4 0.55 0.28 124.0 0.04 16.25
3.0 0.61 0.3 153.9 0.05 14.86
3.9 0.78 0.35 -157.2 0.07 13.51
5.0 0.91 0.42 -120.8 0.1 12.05
5.8 1.05 0.49 -101.2 0.16 11.14
6.0 1.11 0.53 -97.4 0.19 11.14
Notes:
1. Fmin values at 2 GHz and higher are based on measurements while the Fmins below 2 GHz have been extrapolated. The Fmin values are based on a
set of 16 noise  gure measurements made at 16 di erent impedances using an ATN NP5 test system. From these measurements Fmin is calculated.
Refer to the noise parameter application section for more information.
2. S and noise parameters are measured on a microstrip line made on 0.025 inch thick alumina carrier. The input reference plane is at the end of
the gate lead. The output reference plane is at the end of the drain lead. The parameters include the e ect of four plated through via holes con-
necting source landing pads on top of the test carrier to the microstrip ground plane on the bottom side of the carrier. Two 0.020 inch diameter
via holes are placed within 0.010 inch from each source lead contact point, one via on each side of that point.
Typical Noise Parameters, VDS = 4V, IDS = 30 mA
Figure 20. MSG/MAG and S
21
vs. Frequency
at 4V, 30 mA.
FREQUENCY (GHz)
MSG/MAG and S21 (dB)
02010 155
40
35
30
25
20
15
10
5
0
-5
-10
S21
MSG
8
Package Dimensions Outline 43
(SOT-343/SC70 4 lead)
Ordering Information
Part Number No. of Devices Container
ATF-58143-TR1G 3000 7” Reel
ATF-58143-TR2G 10000 13”Reel
ATF-58143-BLKG 100 antistatic bag
HE
D
A2
A1
b
b1
E
1.30 (.051)
BSC
1.15 (.045) BSC
C
L
A
DIMENSIONS (mm)
MIN.
1.15
1.85
1.80
0.80
0.80
0.00
0.15
0.55
0.10
0.10
MAX.
1.35
2.25
2.40
1.10
1.00
0.10
0.40
0.70
0.20
0.46
SYMBOL
E
D
HE
A
A2
A1
b
b1
c
L
NOTES:
1. All dimensions are in mm.
2. Dimensions are inclusive of plating.
3. Dimensions are exclusive of mold ash & metal burr.
4. All specications comply to EIAJ SC70.
5. Die is facing up for mold and facing down for trim/form,
ie: reverse trim/form.
6. Package surface to be mirror nish.
Recommended PCB Pad Layout for
Avago's SC70 4L/SOT-343 Products
1.30
(0.051)
0.60
(0.024)
0.9
(0.035)
Dimensions in mm
(inches)
1.15
(0.045)
2.00
(0.079)
1.00
(0.039)
Tape Dimensions For Outline 4T
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2012 Avago Technologies. All rights reserved. Obsoletes 5989-3749EN
AV02-0672EN - June 8, 2012
PPoP2
F
W
C
D1
D
E
Ao
10 MAX.
t1 (CARRIER TAPE THICKNESS) Tt (COVER TAPE THICKNESS)
10 MAX.
Bo
Ko
DESCRIPTION SYMBOL SIZE (mm) SIZE (INCHES)
LENGTH
WIDTH
DEPTH
PITCH
BOTTOM HOLE DIAMETER
Ao
Bo
Ko
P
D1
2.40 ± 0.10
2.40 ± 0.10
1.20 ± 0.10
4.00 ± 0.10
1.00 + 0.25
0.094 ± 0.004
0.094 ± 0.004
0.047 ± 0.004
0.157 ± 0.004
0.039 + 0.010
CAVITY
DIAMETER
PITCH
POSITION
D
Po
E
1.55 ± 0.10
4.00 ± 0.10
1.75 ± 0.10
0.061 + 0.002
0.157 ± 0.004
0.069 ± 0.004
PERFORATION
WIDTH
THICKNESS
W
t1
8.00 + 0.30 - 0.10
0.254 0.02
0.315 + 0.012
0.0100 ± 0.0008
CARRIER TAPE
CAVITY TO PERFORATION
(WIDTH DIRECTION)
CAVITY TO PERFORATION
(LENGTH DIRECTION)
F
P2
3.50 ± 0.05
2.00 ± 0.05
0.138 ± 0.002
0.079 ± 0.002
DISTANCE
WIDTH
TAPE THICKNESS
C
Tt
5.40 ± 0.10
0.062 ± 0.001
0.205 + 0.004
0.0025 ± 0.0004
COVER TAPE
Device Orientation
USER
FEED
DIRECTION
COVER TAPE
CARRIER
TAPE
REEL
END VIEW
8 mm
4 mm
TOP VIEW
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