To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.) Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand names are mentioned in the document, these names have in fact all been changed to Renesas Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. Renesas Technology Home Page: http://www.renesas.com Renesas Technology Corp. Customer Support Dept. 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Please contact Renesas Technology Corporation for further details on these materials or the products contained therein. 2SJ527(L), 2SJ527(S) Silicon P Channel MOS FET High Speed Power Switching ADE-208-640A (Z) 2nd. Edition Jul. 1998 Features * Low on-resistance R DS(on) = 0.3 typ. * Low drive current * 4 V gete drive devices * High speed switching Outline DPAK-1 4 4 D 1 2 3 G S 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SJ527(L),2SJ527(S) Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS -60 V Gate to source voltage VGSS 20 V Drain current ID -5 A -20 A -5 A -5 A 2.1 mJ 20 W Drain peak current I D(pulse) Body-drain diode reverse drain current I DR Avalenche current Avalenche energy I AP Note1 Note3 EAR Note3 Note2 Channel dissipation Pch Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Note: 2 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2SJ527(L),2SJ527(S) Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS -60 -- -- V I D = -10mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V I G = 100A, VDS = 0 Zero gate voltege drain current I DSS -- -- -10 A VDS = -60 V, VGS = 0 Gate to source leak current I GSS -- -- 10 A VGS = 16V, VDS = 0 Gate to source cutoff voltage VGS(off) -1.0 -- -2.0 V I D = -1mA, VDS = -10V Static drain to source on state RDS(on) -- 0.3 0.4 I D = -3A, VGS = -10V Note4 resistance RDS(on) -- 0.5 0.8 I D = -3A, VGS = -4V Note4 Forward transfer admittance |yfs| 1.8 3 -- S I D = -3A, VDS = -10V Input capacitance Ciss -- 220 -- pF VDS = -10V Output capacitance Coss -- 110 -- pF VGS = 0 Reverse transfer capacitance Crss -- 35 -- pF f = 1MHz Turn-on delay time t d(on) -- 10 -- ns VGS = -10V, ID = -3A Rise time tr -- 30 -- ns RL = 10 Turn-off delay time t d(off) -- 45 -- ns Fall time tf -- 35 -- ns Body-drain diode forward voltage VDF -- -1.35 -- V I F = -5A, VGS = 0 Body-drain diode reverse recovery time t rr -- 55 -- ns I F = -5A, VGS = 0 diF/ dt = 50A/s Note: Note4 4. Pulse test 3 2SJ527(L),2SJ527(S) Main Characteristics Power vs. Temperature Derating -100 I D (A) -50 20 10 50 100 Case Temperature -3 Tc (C) PW -5 D C -2 -1 -0.5 0 = O 10 s s m pe s (1 ra sh (T tion ot) c= Operation in 25 this area is C limited by R DS(on) ) -0.2 Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -30 -100 Drain to Source Voltage V DS (V) Typical Output Characteristics Typical Transfer Characteristics -5 -4 V Pulse Test (A) -5 V -6 V 10 -10 -3.5 V ID -4 200 -20 -3 V Drain Current I D (A) -10 V -5 -8 V 150 10 s m Drain Current 30 0 Drain Current Maximum Safe Operation Area 1 Channel Dissipation Pch (W) 40 -2 -1 VGS = -2.5 V -4 V DS = -10 V Pulse Test -3 -2 -25C -1 Tc = 75C 25C 0 4 -2 -4 -6 Drain to Source Voltage -8 -10 V DS (V) 0 -1 -2 -3 Gate to Source Voltage -4 -5 V GS (V) 2SJ527(L),2SJ527(S) -4 -3 -2 -1 0 Static Drain to Source on State Resistance R DS(on) ( ) Pulse Test I D = -5 A -1 A -2 A -8 -4 -12 Gate to Source Voltage -16 -20 V GS (V) Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 1.2 I D = -4 A -2 A 0.8 VGS = -4 V -5 A -1 A 0.4 -1, -2 A 0 -40 -10 V 0 40 80 120 160 Case Temperature Tc (C) Static Drain to Source on State Resistance vs. Drain Current 10 Pulse Test 3 1 -4 V 0.3 VGS = -10 V 0.1 -0.1 -0.3 -1 -3 Drain Current -10 -30 I D (A) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |y fs | (S) Drain to Source Saturation Voltage V DS(on) (V) -5 Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 5 Tc = -25 C 2 75 C 1 0.5 0.2 0.1 -0.1 -0.2 25 C V DS = -10 V Pulse Test -0.5 -1 -2 -5 Drain Current I D (A) -10 5 2SJ527(L),2SJ527(S) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1000 500 Capacitance C (pF) Reverse Recovery Time trr (ns) 100 50 20 100 20 5 di / dt = 50 A / s V GS = 0, Ta = 25 C 2 1 0 V DS -4 I D = -5 A -40 -60 V GS -80 V DD = -50 V -25 V -10 V -100 0 4 8 12 16 Gate Charge Qg (nc) -8 -12 -16 -20 20 -10 -20 -30 -40 -50 Switching Characteristics t d(off) 50 Switching Time t (ns) -20 V DD = -10 V -25 V -50 V 100 0 V GS (V) 0 VGS = 0 f = 1 MHz Drain to Source Voltage V DS (V) Gate to Source Voltage V DS (V) Crss 10 Dynamic Input Characteristics Drain to Source Voltage Coss 50 10 -0.1 -0.2 -0.5 -1 -2 -5 -10 Reverse Drain Current I DR (A) 6 Ciss 200 tf 20 10 5 t d(on) tr 2 1 -0.1 -0.2 V GS = -10 V, VDD = 30 V duty < 1 % -0.5 -1 -2 -5 Drain Current I D (A) -10 2SJ527(L),2SJ527(S) Maximum Avalanche Energy vs. Channel Temperature Derating Repetitive Avalanche Energy EAR (mJ) Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) -5 -4 -3 -10 V -5 V -2 V GS = 0 V -1 Pulse Test 0 -0.4 -0.8 -1.2 Source to Drain Voltage -1.6 -2.0 2.5 I AP = -5 A V DD = -25 V duty < 0.1 % Rg > 50 2.0 1.5 1.0 0.5 0 25 V SD (V) 50 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit V DS Monitor 75 Avalanche Waveform EAR = L 1 2 * L * I AP * 2 I AP Monitor VDSS VDSS - V DD V (BR)DSS I AP Rg D. U. T V DS VDD ID Vin -15 V 50 0 VDD 7 2SJ527(L),2SJ527(S) Normalized Transient Thermal Impedance vs. Pulse Width Normalized Transient Thermal Impedance s (t) 3 Tc = 25C 1 D=1 0.5 0.3 0.1 0.2 0.1 0.05 ch - c(t) = s (t) * ch - c ch - c = 6.25 C/W, Tc = 25 C 0.02 e uls 1 0.03 0.0 PDM P ot D= h 1s PW T PW T 0.01 10 100 1m 10 m 100 m Pulse Width 10 PW (S) Switching Time Test Circuit Waveform Vout Monitor Vin Monitor 1 Vin 10% D.U.T. RL 90% Vin -10 V 50 V DD = -30 V Vout td(on) 8 90% 90% 10% 10% tr td(off) tf 2SJ527(L),2SJ527(S) Package Dimensions As of January, 2001 1.7 0.5 Unit: mm 2.3 0.2 0.55 0.1 5.5 0.5 6.5 0.5 5.4 0.5 2.29 0.5 16.2 0.5 1.15 0.1 0.8 0.1 3.1 0.5 1.2 0.3 2.29 0.5 0.55 0.1 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (L)-(1) -- Conforms 0.42 g 9 2SJ527(L),2SJ527(S) As of January, 2001 2.3 0.2 0.55 0.1 (4.9) (5.3) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.7 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) 10 DPAK (S)-(1),(2) -- Conforms 0.28 g 2SJ527(L),2SJ527(S) As of January, 2001 (0.1) 2.3 0.2 0.55 0.1 (5.1) (5.1) (0.1) 6.5 0.5 5.4 0.5 1.2 Max 5.5 0.5 1.5 0.5 Unit: mm 0 - 0.25 2.5 0.5 1.15 0.1 0.8 0.1 2.29 0.5 0.55 0.1 2.29 0.5 Hitachi Code JEDEC EIAJ Mass (reference value) DPAK (S)-(3) -- Conforms 0.28 g 11 2SJ527(L),2SJ527(S) Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica Europe Asia Japan : : : : http://semiconductor.hitachi.com/ http://www.hitachi-eu.com/hel/ecg http://sicapac.hitachi-asia.com http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Asia Ltd. Hitachi Tower 16 Collyer Quay #20-00, Singapore 049318 Tel : <65>-538-6533/538-8577 Fax : <65>-538-6933/538-3877 URL : http://www.hitachi.com.sg Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160 Hitachi Asia Ltd. (Taipei Branch Office) 4/F, No. 167, Tun Hwa North Road, Hung-Kuo Building, Taipei (105), Taiwan Tel : <886>-(2)-2718-3666 Fax : <886>-(2)-2718-8180 Telex : 23222 HAS-TP URL : http://www.hitachi.com.tw Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon, Hong Kong Tel : <852>-(2)-735-9218 Fax : <852>-(2)-730-0281 URL : http://www.hitachi.com.hk Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan. Colophon 2.0 12