SEMICONDUCTOR NETWORKS STANDARD PRODUCTS - SILICON PLANAR QUAD TRANSISTORS Devices in this range consist of four electrically isolated transistors encapsulated in a single moulded or ceramic dual in-line package. Their applications range from small signal amplification through to medium power switching and coredriving. @ FF3725J Approval British Standards/CECC Specification 50004 019(F) General Description Device type Package Description Applications FF2221E Moulded DIL 4 isolated n-p-n transistors Designed for general purpose FF2221J Ceramic DIL similar to 2N2221 switching applications FF2222E Moulded DIL 4 isolated n-p-n transistors | 4nd d.c. to VHF amplifier FF2222) Ceramic DIL similar to 2N2222 circuits FF2483 Moulded DIL 4 isolated n-p-n transistors Designed for low level, low FF2483J Ceramic DIL similar to 2N2483 noise, high gain amplifier FF2484E Moulded DIL 4 isolated n-p-n transistors circuits FF2484J5 Ceramic DIL similar to 2N2484 FF2906E Moulded DiL 4 isolated p-n-p transistors Designed for general purpose FF2906J Ceramic DIL similar to 2N2906 switching applications FF2907E Moulded DIL 4 isolated p-n-p transistors | and d.c. to VHF amplifier FF2907J Ceramic DIL similar to 2N2907 circuits FF3467J Ceramic DIL 4 isolated p-n-p transistors Designed for high current, similar to 2N3467 high speed switching FF3725E Moulded DIL 4 isolated n-p-n transistors applications such as core or FF3725J Ceramic DIL similar to 2N3725 wire memory driving Ratings and Characteristics at 25C ambient temperature (each transistor) Maximum Ratings hee max min fr Type Vcso VcEO le Pp* | min/max at Ic Vecetsat) at ic MHz at Ic Volts Volts mA mW mA Voits mA mA FF2221E 60 40 500 400 40/ 150 0.4 150 200 20.0 FF2221J 60 40 600 750 40/ 150 0.4 150 200 20.0 FF2222E 60 40 500 400 ) 100/ 150 0.4 150 ) 200 20.0 FF2222J 60 40 600 750 | 100/ 150 0.4 150 | 200 20.0 FF2483E 60 40 100 400 | 150/ 1 0.35 1 175] 0.5 FF2483J 60 40 100 600 | 150/ 1 0.35 1 175} 0.5 FF2484E 60 40 100 400 | 300/ 1 0.35 1 175] 0.5 FF2484J 60 40 100 600 ; 300/ 1 0.35 1 175] 0.5 FF2906E ~60 -40 600 600 40/ 150 ~0.4 160 200 ~ 50.0 FF2906) -60 40 600 750 40/ 150 0.4 150 | 200 ~50.0 FF2907E 60 40 600 600 | 100/ 150 0.4 160 200 50.0 FF2907J 60 -40 600 750 | 100/ 150 0.4 150 | 200 50.0 FF3467J 40 -40 1000 900 20/ 500 0.5 500 190 50.0 FF3725E 60 40 500 600 35/200 100 0.3 100 250 50.0 FF3725J 60 40 1500 760 35/250 100 0.26 100 3257 50.0 *Power dissipation per transistor. Typical Pin configurations overleaf. H19