Datasheet
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© 2015 ROHM Co., Ltd. All rights reserved.
RGTH00TS65
650V 50A Field Stop Trench IGBT
*1 Pulse width limited by T
jmax.
Operating Junction Temperature T
j
40 to +175 °C
Storage Temperature T
stg
55 to +175 °C
Power Dissipation
T
C
= 25°C P
D
277 W
T
C
= 100°C P
D
138 W
200 APulsed Collector Current I
CP
*1
Outline
V
CES
650V
TO-247N
I
C(100°C)
50A
V
CE(sat) (Typ.)
1.6V
P
D
277W
Features Inner Circui t
1) Low Collector - Emitter Saturation Voltage
2) High Speed Switching
3) Low Switching Loss & Soft Switching
4) Pb - free Lead Plating ; RoHS Compliant
Packaging Specifi cationsApplications
Type
Packaging TubePFC
Reel Size (mm) -UPS
Tape Width (mm) -Power Conditioner
Basic Ordering Unit (pcs) 450IH
Packing code C11
Marking
RGTH00TS65
Absolute Maxi mum Rat i ngs (at T
C
= 25°C unless otherwise specified)
Parameter Symbol Value Unit
Collector - Emitter Voltage V
CES
650 V
Gate - Emitter Voltage V
GES
30 V
Collector Current
T
C
= 25°C I
C
85 A
T
C
= 100°C I
C
50 A
(1)(2)(3)
(1) Gate
(2) Collector
(3) Emitter
(1)
(2)
(3)
1/9 2015.10 - Rev.C
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Data Sheet
RGTH00TS65
Thermal Resistance
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
V
Tj = 25°C - 1.6 2.1
Tj = 175°C - 2.1 -
VCE(sat)
IC = 50A, VGE = 15V
-200 nA
Gate - Emitter Threshold
Voltage VGE(th) VCE = 5V, IC = 34.7mA 4.5 5.5 6.5 V
Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V -
--V
Collector Cut - off Current ICES VCE = 650V, VGE = 0V --10μA
Collector - Emitter Breakdown
Voltage BVCES IC = 10μA, VGE = 0V 650
Conditions
Values
Unit
Min. Typ. Max.
Collector - Emitter Saturation
Voltage
Unit
Min. Typ. Max.
Thermal Resistance IGBT Junction - Case Rθ(j-c) - - 0.54 °C/W
Parameter Symbol
Values
Parameter Symbol
2/9 2015.10 - Rev.C
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RGTH00TS65
IGBT Electrical Characteristics (at Tj = 25°C unless otherwise specified)
Reverse Bias Safe Operating Area RBSOA
IC = 200A, VCC = 520V
FULL SQUARE -
VP = 650V, VGE = 15V
RG = 60Ω, Tj = 175°C
- 159 -
Fall Time tfInductive Load - 62 -
ns
Rise Time trVGE = 15V, RG = 10Ω-63-
Turn - off Delay Time td(off) Tj = 175°C
Turn - on Delay Time td(on) IC = 50A, VCC = 400V -39-
- 143 -
Fall Time tfInductive Load - 50 -
Turn - on Delay Time td(on) IC = 50A, VCC = 400V -39-
ns
Rise Time trVGE = 15V, RG = 10Ω-63-
Turn - off Delay Time td(off) Tj = 25°C
nCGate - Emitter Charge Qge IC = 50A -22-
Gate - Collector Charge Qgc VGE = 15V -31-
-43-
Total Gate Charge QgVCE = 300V -94-
Parameter Symbol Conditions
Values
Unit
Min. Typ. Max.
pFOutput Capacitance Coes VGE = 0V - 106 -
Reverse Transfer Capacitance Cres f = 1MHz
Input Capacitance Cies VCE = 30V - 2740 -
3/9 2015.10 - Rev.C
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Data Sheet
RGTH00TS65
Electrical Charact eri st i c Curves
Fig.2 Collector Current vs. Case Temperature
Collector Current : IC[A]
Case Temperature : Tc [ºC]
Fig.3 Forward Bias Safe Operating Area
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.4 Reverse Bias Safe Operating Area
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.1 Power Dissipation vs. Case Temperature
Power Dissipation : PD[W]
Case Temperature : Tc [ºC]
0
20
40
60
80
100
120
140
160
180
200
220
240
260
280
300
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
140
160
180
200
220
240
0 200 400 600 800
Tj≦175ºC
VGE=15V
0
10
20
30
40
50
60
70
80
90
0 25 50 75 100 125 150 175
Tj≦175ºC
VGE≧15V
0.01
0.1
1
10
100
1000
1 10 100 1000
TC= 25ºC
Single Pulse
10µs
100µs
4/9 2015.10 - Rev.C
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Data Sheet
RGTH00TS65
Electrical Charact eri st i c Curves
Fig.5 Typical Output Characteristics
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.6 Typical Output Characteristics
Collector Current : IC[A]
Collector To Emitter Voltage : VCE[V]
Fig.7 Typical Transfer Characteristics
Collector Current : IC[A]
Gate To Emitter Voltage : VGE [V]
Fig.8 Typical Collector To Emitter Saturation Voltage
vs. Junction Temperature
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Junction Temperature : Tj[ºC]
0
20
40
60
80
100
120
140
160
180
200
012345
Tj= 175ºC
VGE= 20V
VGE= 15V
VGE= 12V
VGE= 10V
VGE= 8V
0
20
40
60
80
100
120
140
160
180
200
012345
Tj= 25ºC
VGE= 20V
VGE= 15V
VGE= 12V VGE= 10V
VGE= 8V
0
10
20
30
40
50
60
024681012
VCE= 10V
Tj= 25ºC
Tj= 175ºC
0
1
2
3
4
25 50 75 100 125 150 175
IC= 100A
IC= 25A
IC= 50A
VGE= 15V
5/9 2015.10 - Rev.C
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RGTH00TS65
Electrical Charact eri st i c Curves
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Gate To Emitter Voltage : VGE [V]
Collector To Emitter Saturation Voltage
: VCE(sat) [V]
Gate To Emitter Voltage : VGE [V]
Switching Time [ns]
Collector Current : IC[A]
Fig.12 Typical Switching Time
vs. Gate Resistance
Switching Time [ns]
Gate Resistance : RG [Ω]
0
5
10
15
20
5101520
Tj= 25ºC
IC= 100A
IC= 25A
IC= 50A
0
5
10
15
20
5 101520
Tj= 175ºC
IC= 100A
IC= 25A
IC= 50A
10
100
1000
0 102030405060708090100
tf
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
td(off)
td(on)
tr
10
100
1000
0 1020304050
tf
td(off)
td(on)
tr
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive ｌoad
Fig.9 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Fig.10 Typical Collector To Emitter Saturation Voltage
vs. Gate To Emitter Voltage
Fig.11 Typical Switching Time
vs. Collector Current
6/9 2015.10 - Rev.C
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RGTH00TS65
Electrical Charact eri st i c Curves
0.01
0.1
1
10
0 102030405060708090100
Eoff
VCC=400V, VGE=15V
RG=10Ω, Tj=175ºC
Inductive ｌoad
Eon
0.01
0.1
1
10
0 1020304050
Eoff
Eon
VCC=400V, IC=50A
VGE=15V, Tj=175ºC
Inductive ｌoad
Fig.13 Typical Switching Energy Losses
vs. Collector Current
Switching Energy Losses [mJ]
Collector Current : IC[A]
Fig.14 Typical Switching Energy Losses
vs. Gate Resistance
Switching Energy Losses [mJ]
Gate Resistance : RG [Ω]
Fig.15 Typical Capacitance
vs. Collector To Emitter Voltage
Capacitance [pF]
Collector To Emitter Voltage : VCE[V]
Fig.16 Typical Gate Charge
Gate To Emitter Voltage : VGE [V]
Gate Charge : Qg [nC]
1
10
100
1000
10000
0.01 0.1 1 10 100
Cies
f=1MHz
VGE=0V
Tj=25ºC
Coes
Cres
0
5
10
15
0 102030405060708090100
VCC=300V
IC=50A
Tj=25ºC
7/9 2015.10 - Rev.C
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© 2015 ROHM Co., Ltd. All rights reserved.
Data Sheet
RGTH00TS65
Electrical Charact eri st i c Curves
0.01
0.1
1
10
0.0001 0.001 0.01 0.1 1
D= 0.5
0.2
0.1
0.01
0.02
0.05
Single Pulse
Fig.17 IGBT Transient Thermal Impedance
Transient Thermal Impedance
: ZthJC [ºC/W]
Pulse Width : t1[s]
t1
t2
PDM
Duty=t1/t2
Peak Tj=PDM×ZthJCTC
8/9 2015.10 - Rev.C
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Data Sheet
RGTH00TS65
Inductive Load Switching Ci rcuit and Waveform
VG
D.U.T.
Fig.18 Inductive Load Circuit
Gate Drive Time
toff
tf
td(off)
td(on) tr
10%
90%
VCE(sat)
10%
90%
ton
VGE
IC
VCE
Fig.19 Inductive Load Waveform
9/9 2015.10 - Rev.C
R1102
B
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and verify the latest specifica-
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