This Common Cathode Silicon Epitaxial Planar Dual Diode is
designed for use in ultra high speed switching applications. This
device is housed in the SC–89 package which is designed for low
power surface mount applications, where board space is at a premium.
•Fast trr
•Low CD
•Available in 8 mm Tape and Reel
MAXIMUM RATINGS (TA = 25°C)
Rating Symbol Value Unit
Reverse Voltage VR80 Vdc
Peak Reverse Voltage VRM 80 Vdc
Forward Current IF100 mAdc
Peak Forward Current IFM 300 mAdc
Peak Forward Surge Current IFSM(1) 2.0 Adc
THERMAL CHARACTERISTICS
Rating Symbol Max Unit
Power Dissipation PD150 mW
Junction Temperature TJ150 °C
Storage Temperature Range Tstg –55 to +150 °C
1. t = 1 µS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic Symbol Condition Min Max Unit
Reverse Voltage Leakage Current IRVR = 70 V — 0.1 µAdc
Forward Voltage VFIF = 100 mA — 1.2 Vdc
Reverse Breakdown Voltage VRIR = 100 µA 80 — Vdc
Diode Capacitance CDVR = 6.0 V, f = 1.0 MHz — 3.5 pF
Reverse Recovery Time trr(2) IF = 5.0 mA, VR = 6.0 V, RL = 100 Ω, Irr = 0.1 IR— 4.0 ns
2. trr Test Circuit on following page.
LDAN222T1=N9
Driver Marking
LDAN222T1-1/3
1
2
3
SC-89
LDAN222T1
3
CATHODE
1
ANODE
2
ANODE
Common Cathode Silicon
Dual Switching Diode
Electrical characteristic curves
Figure 1. Forward Voltage Figure 2. Reverse Current
Figure 3. Diode Capacitance
RECOVERY TIME EQUIVALENT TEST CIRCUIT INPUT PULSE OUTPUT PULSE
LDAN222T1
LDAN222T1-2/3
NOTES:
1.DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2.CONTROLLING DIMENSION: MILLIMETERS
3.MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4.463C-01 OBSOLETE, NEW STANDARD 463C-02.
LDAN222T1
SC-89
LDAN222T1-3/3
