DISCRETE SEMICONDUCTORS DATA SHEET ok, halfpage M3D088 BCV27; BCV47 NPN Darlington transistors Product specification Supersedes data of 1997 Sep 04 1999 Apr 08 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 FEATURES PINNING * Medium current (max. 500 mA) PIN DESCRIPTION * Low voltage (max. 60 V) 1 base * High DC current gain (min. 20000). 2 emitter 3 collector APPLICATIONS * Preamplifier input applications. DESCRIPTION handbook, halfpage 3 NPN Darlington transistor in a SOT23 plastic package. PNP complements: BCV26 and BCV46. 1 3 TR1 TR2 MARKING 1 2 2 MARKING CODE(1) TYPE NUMBER BCV27 FF BCV47 FG MAM298 Top view Note 1. = p : Made in Hong Kong. = t : Made in Malaysia. Fig.1 Simplified outline (SOT23) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCES PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BCV27 - 40 V BCV47 - 80 V BCV27 - 30 V BCV47 - 60 V collector-emitter voltage open base VEBO emitter-base voltage - 10 V IC collector current (DC) - 500 mA ICM peak collector current - 800 mA IB base current Ptot total power dissipation Tstg open collector - 100 mA - 250 mW storage temperature -65 +150 C Tj junction temperature - 150 C Tamb operating ambient temperature -65 +150 C Tamb 25 C; note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1999 Apr 08 2 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 C unless otherwise specified. SYMBOL ICBO PARAMETER CONDITIONS MIN. TYP. MAX. UNIT collector cut-off current BCV27 IE = 0; VCBO = 30 V - - 100 nA BCV47 IE = 0; VCBO = 60 V - - 100 nA - - 100 nA IC = 1 mA 4 000 - - IC = 10 mA 10000 - - IC = 100 mA 20000 - - IEBO emitter cut-off current IE = 0; VEB = 10 V hFE DC current gain VCE = 5 V; (see Fig.2) BCV27 DC current gain BCV47 VCE = 5 V; (see Fig.2) IC = 1 mA 2 000 - - IC = 10 mA 4 000 - - IC = 100 mA 10000 - - VCEsat collector-emitter saturation voltage IC = 100 mA; IB = 0.1 mA - - 1 V VBEsat base-emitter saturation voltage IC = 100 mA; IB = 0.1 mA - - 1.5 V VBEon base-emitter on-state voltage IC = 10 mA; VCE = 5 V - - 1.4 V fT transition frequency IC = 30 mA; VCE = 5 V; f = 100 MHz - 220 - MHz 1999 Apr 08 3 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 MGD837 80000 handbook, full pagewidth hFE 60000 40000 20000 0 10-1 1 10 VCE = 2 V. Fig.2 DC current gain; typical values. 1999 Apr 08 4 102 IC (mA) 103 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-02-28 SOT23 1999 Apr 08 EUROPEAN PROJECTION 5 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1999 Apr 08 6 Philips Semiconductors Product specification NPN Darlington transistors BCV27; BCV47 NOTES 1999 Apr 08 7 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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