DATA SH EET
Product specification
Supersedes data of 1997 Sep 04 1999 Apr 08
DISCRETE SEMICONDUCTORS
BCV27; BCV47
NPN Darlington transistors
o
k, halfpage
M3D088
1999 Apr 08 2
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
FEATURES
•Medium current (max. 500 mA)
•Low voltage (max. 60 V)
•High DC current gain (min. 20000).
APPLICATIONS
•Preamplifier input applications.
DESCRIPTION
NPN Darlington transistor in a SOT23 plastic package.
PNP complements: BCV26 and BCV46.
MARKING
Note
1. ∗= p : Made in Hong Kong.
∗= t : Made in Malaysia.
TYPE NUMBER MARKING CODE(1)
BCV27 FF∗
BCV47 FG∗
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
MAM298
13
2
1
3
2
TR2
TR1
Top view
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter
BCV27 −40 V
BCV47 −80 V
VCES collector-emitter voltage open base
BCV27 −30 V
BCV47 −60 V
VEBO emitter-base voltage open collector −10 V
ICcollector current (DC) −500 mA
ICM peak collector current −800 mA
IBbase current −100 mA
Ptot total power dissipation Tamb ≤25 °C; note 1 −250 mW
Tstg storage temperature −65 +150 °C
Tjjunction temperature −150 °C
Tamb operating ambient temperature −65 +150 °C
1999 Apr 08 3
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb =25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current
BCV27 IE= 0; VCBO =30V −−100 nA
BCV47 IE= 0; VCBO =60V −−100 nA
IEBO emitter cut-off current IE= 0; VEB =10V −−100 nA
hFE DC current gain VCE = 5 V; (see Fig.2)
BCV27 IC= 1 mA 4000 −−
I
C
= 10 mA 10000 −−
I
C
= 100 mA 20000 −−
DC current gain VCE = 5 V; (see Fig.2)
BCV47 IC= 1 mA 2000 −−
I
C
= 10 mA 4000 −−
I
C
= 100 mA 10000 −−
V
CEsat collector-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1V
V
BEsat base-emitter saturation voltage IC= 100 mA; IB= 0.1 mA −−1.5 V
VBEon base-emitter on-state voltage IC= 10 mA; VCE =5V −−1.4 V
fTtransition frequency IC= 30 mA; VCE = 5 V; f = 100 MHz −220 −MHz
1999 Apr 08 4
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
Fig.2 DC current gain; typical values.
handbook, full pagewidth
0
60000
80000
20000
40000
MGD837
10−11IC (mA)
hFE
10 102 103
VCE =2V.
1999 Apr 08 5
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 Apr 08 6
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
1999 Apr 08 7
Philips Semiconductors Product specification
NPN Darlington transistors BCV27; BCV47
NOTES
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Printed in The Netherlands 115002/00/04/pp8 Date of release: 1999 Apr 08 Document order number: 9397 750 05551
