DATA SHEET MICRONAS Edition Sept. 15, 2004 6251-478-2DS HAL710, HAL730 Hall-Effect Sensors with Direction Detection MICRONAS HAL710, HAL730 DATA SHEET Contents Page Section Title 3 3 3 4 4 4 4 4 4 1. 1.1. 1.2. 1.3. 1.3.1. 1.4. 1.5. 1.6. 1.7. Introduction Features Family Overview Marking Code Special Marking of Prototype Parts Operating Junction Temperature Range Hall Sensor Package Codes Solderability Pin Connections 5 2. Functional Description 8 8 9 9 9 9 10 10 3. 3.1. 3.2. 3.3. 3.4. 3.4.1. 3.5. 3.6. Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Storage and Shelf Life Recommended Operating Conditions Characteristics 14 14 4. 4.1. Type Description HAL710, HAL730 16 16 16 16 16 17 5. 5.1. 5.2. 5.3. 5.4. 5.5. Application Notes Ambient Temperature Extended Operating Conditions Signal Delay Test Mode Activation Start-up Behavior 18 6. Data Sheet History 2 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET Hall-Effect Sensors with Direction Detection Release Note: Revision bars indicate significant changes to the previous edition. 1. Introduction 1.1. Features - generation of Count Signals and Direction Signals - delay of the Count Signals with respect to the Direction Signal of 1 s minimum - switching type: latching The HAL710 and the HAL730 are monolithic integrated Hall-effect sensors manufactured in CMOS technology with two independent Hall plates S1 and S2 spaced 2.35 mm apart. The devices have two open-drain outputs: - The Count Output operates like a single latched Hall switch according to the magnetic field present at Hall plate S1 (see Fig. 4-1). - The Direction Output indicates the direction of a linear or rotating movement of magnetic objects. In combination with an active target providing a sequence of alternating magnetic north and south poles, the sensors generate the signals required to control position, speed, and direction of the target movement. The internal circuitry evaluates the direction of the movement and updates the Direction Output at every edge of the Count Signal (rising and falling). The state of the Direction Output only changes at a rising or falling edge of the Count Output. The design ensures a setup time for the Direction Output with respect to the corresponding Count Signal edge of 1/2 clock periods (1 s minimum). The devices include temperature compensation and active offset compensation. These features provide excellent stability and matching of the switching points in the presence of mechanical stress over the whole temperature and supply voltage range. This is required by systems determining the direction from the comparison of two signals. - switching offset compensation at typically 150 kHz - operation from 3.8 V to 24 V supply voltage - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - robustness of magnetic characteristics against mechanical stress - short-circuit protected open-drain outputs by thermal shut down - constant switching points over a wide supply voltage range - EMC corresponding to ISO 7637 1.2. Family Overview The types differ according to the behavior of the Direction Output. Type Direction Output: Definition of Output State HAL710 Output high, when edge of comparator 1 precedes edge of comparator 2 HAL730 Output high, when edge of comparator 2 precedes edge of comparator 1 The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 125 C. The HAL710 and the HAL730 are available in the SMD-package SOT89B-2. Micronas Sept. 15, 2004; 6251-478-2DS 3 HAL710, HAL730 DATA SHEET 1.3. Marking Code 1.5. Hall Sensor Package Codes All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. HALXXXPA-T Temperature Range: K or E Package: SF for SOT89B-2 Type Type: 710 Temperature Range K E Example: HAL710SF-K HAL710 710K 710E HAL730 730K 730E Type: 710 Package: SOT89B-2 Temperature Range: TJ = -40 C to +140 C 1.3.1. Special Marking of Prototype Parts Prototype parts are coded with an underscore beneath the temperature range letter on each IC. They may be used for lab experiments and design-ins but are not intended to be used for qualification tests or as production parts. Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Hall Sensors: Ordering Codes, Packaging, Handling". 1.6. Solderability all packages: according to IEC68-2-58 1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). K: TJ = -40 C to +140 C During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. 1.7. Pin Connections E: TJ = -40 C to +100 C 1 VDD 3 Count Output Note: Due to power dissipation, there is a difference between the ambient temperature (TA) and junction temperature. Please refer to section 5.1. on page 16 for details. 2 Direction Output 4 GND Fig. 1-1: Pin configuration 4 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET 2. Functional Description The HAL710 and the HAL730 are monolithic integrated circuits with two independent subblocks each consisting of a Hall plate and the corresponding comparator. Each subblock independently switches the comparator output in response to the magnetic field at the location of the corresponding sensitive area. If a magnetic field with flux lines perpendicular to the sensitive area is present, the biased Hall plate generates a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The output of comparator 1 (connected to S1) directly controls the Count Output. The outputs of both comparators enter the Direction Detection Block controlling the state of the Direction Output. The Direction Output is updated at every edge of comparator 1 (rising and falling). The previous state of the Direction Output is maintained between two edges of the Count Output and in case the edges at comparator 1 and comparator 2 occur in the same clock period. The subblocks are designed to have closely matched switching points. The temperature-dependent bias - common to both subblocks - increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the comparator switches to the appropriate state. The built-in hysteresis prevents oscillations of the outputs. In order to achieve good matching of the switching points of both subblocks, the magnetic offset caused by mechanical stress is compensated for by use of switching offset compensation techniques. Therefore, an internal oscillator provides a two-phase clock to both subblocks. For each subblock, the Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Shunt protection devices clamp voltage peaks at the output pins and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V. Micronas Clock t BS1 BS1on t BS2 BS2on Count Output VOH VOL t Direction Output VOH VOL t Idd 1/fosc tf t Fig. 2-1: HAL710 timing diagram with respect to the clock phase Fig. 2-2 and Fig. 2-3 on page 6 show how the output signals are generated by the HAL710 and the HAL730. The magnetic flux density at the locations of the two Hall plates is shown by the two sinusodial curves at the top of each diagram. The magnetic switching points are depicted as dashed lines for each Hall plate separately. At the time t = 0, the signal S2 precedes the signal S1. The Direction Output is in the correct state according to the definition of the sensor type. When the phase of the magnetic signal changes its sign, the Direction-Output switches its state with the next signal edge of the Count Output. Sept. 15, 2004; 6251-478-2DS 5 HAL710, HAL730 DATA SHEET HAL710 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2 Direction Output Pin 2 0 time Fig. 2-2: HAL710 timing diagram HAL730 Bon,S1 Boff,S1 Bon,S2 Boff,S2 S1 Count Output Pin 3 S2 Direction Output Pin 2 0 time Fig. 2-3: HAL730 timing diagram 6 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET 1 VDD Reverse Voltage and Overvoltage Protection Temperature Dependent Bias Hysteresis Control Test-Mode Control Short Circuit and Overvoltage Protection Hall Plate 1 Comparator 3 Switch Output Count Output S1 Hall Plate 2 Comparator Direction Detection Switch Clock 2 Output S2 Direction Output 4 GND Fig. 2-4: HAL710 and HAL730 block diagram Micronas Sept. 15, 2004; 6251-478-2DS 7 HAL710, HAL730 DATA SHEET 3. Specifications 3.1. Outline Dimensions Fig. 3-1: SOT89B-2: Plastic Small Outline Transistor package, 4 leads, with two sensitive areas Weight approximately 0.039 g 8 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET 3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT89B-2 x1+x2 (2.350.001) mm x1=x2 1.175 mm nominal y 0.975 mm nominal 3.4. Absolute Maximum Ratings Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute maximum rating conditions for extended periods will affect device reliability. This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than absolute maximum-rated voltages to this high-impedance circuit. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Max. Unit VDD Supply Voltage 1 -15 281) V VO Output Voltage 2, 3 -0.3 281) V IO Continuous Output Current 2, 3 - 201) mA TJ Junction Temperature Range -40 170 C 1) as long as TJmax is not exceeded 3.4.1. Storage and Shelf Life The permissible storage time (shelf life) of the sensors is unlimited, provided the sensors are stored at a maximum of 30 C and a maximum of 85% relative humidity. At these conditions, no Dry Pack is required. Solderability is guaranteed for one year from the date code on the package. Solderability has been tested after storing the devices for 16 hours at 155 C. The wettability was more than 95%. Micronas Sept. 15, 2004; 6251-478-2DS 9 HAL710, HAL730 DATA SHEET 3.5. Recommended Operating Conditions Functional operation of the device beyond those indicated in the "Recommended Operating Conditions" of this specification is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime. All voltages listed are referenced to ground (GND). Symbol Parameter Pin No. Min. Typ. Max. Unit VDD Supply Voltage 1 3.8 - 24 V IO Continuous Output Current 3 0 - 10 mA VO Output Voltage (output switch off) 3 0 - 24 V 3.6. Characteristics at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, GND = 0 V at Recommended Operation Conditions if not otherwise specified in the column "Conditions". Typical Characteristics for TJ = 25 C and VDD = 5 V. Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions IDD Supply Current 1 3 5.5 9 mA TJ = 25 C IDD Supply Current over Temperature Range 1 2 7 10 mA VDDZ Overvoltage Protection at Supply 1 - 28.5 32 V IDD = 25 mA, TJ = 25 C, t = 2 ms VOZ Overvoltage Protection at Output 2,3 - 28 32 V IOL = 20 mA, TJ = 25 C, t = 15 ms VOL Output Voltage 2,3 - 130 280 mV IOL = 10 mA, TJ = 25 C VOL Output Voltage over Temperature Range 2,3 - 130 400 mV IOL = 10 mA, IOH Output Leakage Current 2,3 - 0.06 0.1 A Output switched off, TJ = 25 C, VOH = 3.8 V to 24 V IOH Output Leakage Current over Temperature Range 2,3 - - 10 A Output switched off, TJ 140 C, VOH = 3.8 V to 24 V fosc Internal Sampling Frequency over Temperature Range - 100 150 - kHz ten(O) Enable Time of Output after Setting of VDD 1 - 50 - s VDD = 12 V, B>Bon + 2 mT or B<Boff - 2 mT tr Output Rise Time 2,3 - 0.2 - s VDD = 12 V, RL = 2.4 k, CL = 20 pF tf Output FallTime 2,3 - 0.2 - s VDD = 12 V, RL = 2.4 k, CL = 20 pF RthSB case SOT89B-2 Thermal Resistance Junction to Substrate Backside - - 150 200 K/W Fiberglass Substrate 30 mm x 10mm x 1.5mm, pad size 10 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET mA 25 mA 6 HAL 7xx HAL 7xx 20 IDD IDD TA = -40 C 15 5 TA = 25 C VDD = 24 V VDD = 12 V TA=140 C 10 5 4 0 VDD = 3.8 V -5 3 -10 -15 -15-10 -5 0 2 -50 5 10 15 20 25 30 35 V 0 50 VDD TA Fig. 3-2: Typical supply current versus supply voltage mA 6.0 IDD Fig. 3-4: Typical supply current versus ambient temperature kHz 190 HAL 7xx 5.5 150 C 100 HAL 7xx TA = -40 C 5.0 fosc 180 TA = 25 C 4.5 4.0 TA = 100 C 170 3.5 TA = 140 C 3.0 2.5 160 VDD = 3.8 V 2.0 1.5 150 1.0 VDD = 4.5 V...24 V 0.5 0 1 2 3 4 5 6 7 140 -50 8 V VDD Fig. 3-3: Typical supply current versus supply voltage Micronas 0 50 100 150 200 C TA Fig. 3-5: Typ. internal chopper frequency versus ambient temperature Sept. 15, 2004; 6251-478-2DS 11 HAL710, HAL730 DATA SHEET kHz 240 mV 400 HAL 7xx HAL 7xx IO = 10 mA 350 fosc 220 VOL 300 200 250 180 TA = 140 C 200 TA = 100 C TA = 25 C 160 150 TA = 25 C TA = -40 C TA = 140 C TA = -40 C 100 140 50 120 0 5 10 15 20 25 0 30 V 0 5 10 15 20 25 VDD VDD Fig. 3-6: Typ. internal chopper frequency versus supply voltage kHz 240 fosc 30 V Fig. 3-8: Typical output low voltage versus supply voltage mV 400 HAL 7xx 220 HAL 7xx IO = 10 mA VOL 300 200 180 TA = 140 C 200 TA =100 C TA = 25 C 160 TA = 25 C TA = -40 C 3 3.5 4.0 4.5 5.0 5.5 0 6.0 V VDD 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 3-7: Typ. internal chopper frequency versus supply voltage 12 TA = -40 C TA = 140 C 140 120 100 Fig. 3-9: Typical output low voltage versus supply voltage Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET mV 300 HAL 7xx A HAL 7xx 102 IO = 10 mA VDD = 3.8 V 101 250 VOL VDD = 4.5 V VDD = 24 V 200 IOH 100 10-1 150 10-2 100 VOH = 3.8 V 10-3 50 10-4 VOH = 24 V 0 -50 0 50 100 150 C 10-5 -50 TA 50 100 150 200 C TA Fig. 3-10: Typ. output low voltage versus ambient temperature A 0 Fig. 3-12: Typical output leakage current versus ambient temperature HAL 7xx 102 101 IOH 100 TA = 140 C 10-1 10-2 TA = 100 C 10-3 10-4 TA = 25 C 10-5 10-6 15 20 25 30 35 V VOH Fig. 3-11: Typical output leakage current versus output voltage Micronas Sept. 15, 2004; 6251-478-2DS 13 HAL710, HAL730 DATA SHEET Magnetic Thresholds (quasistationary: dB/dt<0.5 mT/ms) 4. Type Description 4.1. HAL710, HAL730 The types differ according to the behavior of the Direction Output (see Section 1.2. on page 3). at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V Magnetic Features Parameter - typical BON: 14.9 mT at room temperature On-Point BS1on, BS2on Off-Point BS1off,, BS2off Unit Tj Min. Typ. Max. Min. Typ. Max. - temperature coefficient of -2000 ppm/K in all magnetic characteristics -40 C 12.5 16.3 20 -20 -16.3 -12.5 mT 25 C 10.7 14.9 19.1 -19.1 -14.9 -10.7 mT - operation with static magnetic fields and dynamic magnetic fields up to 10 kHz 100 C 7.7 12.5 17.3 -17.3 -12.5 -7.7 mT 140 C 6.0 10.9 16.0 -16.0 -10.9 -6.0 mT - typical BOFF: -14.9 mT at room temperature Output Voltage VO Matching BS1 and BS2 (quasistationary: dB/dt<0.5 mT/ms) BHYS at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified VOL BOFF 0 B BON Fig. 4-1: Definition of magnetic switching points for the HAL710 Positive flux density values refer to magnetic south pole at the branded side of the package. Applications Typical characteristics for TJ = 25 C and VDD = 5 V BS1on - BS2on Parameter BS1off - BS2off Unit Tj Min. Typ Max. Min. Typ Max. -40 C -7.5 0 7.5 -7.5 0 7.5 mT 25 C -7.5 0 7.5 -7.5 0 7.5 mT 100 C -7.5 0 7.5 -7.5 0 7.5 mT 140 C -7.5 0 7.5 -7.5 0 7.5 mT The HAL710 and the HAL730 are the optimal sensors for position-control applications with direction detection and alternating magnetic signals such as: - multipole magnet applications, - rotating speed and direction measurement, position tracking (active targets), and - window lifters. Hysteresis Matching (quasistationary: dB/dt<0.5 mT/ms) at TJ = -40 C to +140 C, VDD = 3.8 V to 24 V, as not otherwise specified Typical characteristics for TJ = 25 C and VDD = 5 V Parameter 14 (BS1on - BS1off) / (BS2on - BS2off) Unit Tj Min. Typ. Max. -40 C 0.85 1.0 1.2 - 25 C 0.85 1.0 1.2 - 100 C 0.85 1.0 1.2 - 140 C 0.85 1.0 1.2 - Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET mT 20 mT 25 HAL 710, HAL730 BON 15 BOFF HAL 710, HAL730 20 BON BOFF 15 BON BONmax 10 5 TA = -40 C TA = 25 C 0 BONtyp 5 BONmin VDD = 3.8 V 0 TA = 100 C VDD = 4.5 V... 24 V TA = 140 C -5 10 -5 BOFFmax -10 -10 BOFFtyp -15 -20 -20 0 5 10 15 20 25 -25 -50 30 V VDD mT 20 0 50 100 150 C TA, TJ Fig. 4-2: Magnetic switching points versus supply voltage BON BOFF BOFFmin BOFF -15 Fig. 4-4: Magnetic switching points versus ambient temperature HAL 710, HAL 730 15 BON 10 5 TA = -40 C TA = 25 C 0 TA = 100 C TA = 140 C -5 -10 -15 -20 BOFF 3 3.5 4.0 4.5 5.0 5.5 6.0 V VDD Fig. 4-3: Magnetic switching points versus supply voltage Micronas Sept. 15, 2004; 6251-478-2DS 15 HAL710, HAL730 DATA SHEET 5. Application Notes 5.3. Signal Delay 5.1. Ambient Temperature The extra circuitry required for the direction detection increases the latency of the Count and Direction Signal compared to a simple switch (e.g. HAL 525). This extra delay corresponds to 0.5 and 1 clock period for the Direction Signal and Count Signal respectively. Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T 5.4. Test Mode Activation At static conditions and continuous operation, the following equation applies: In order to obtain the normal operation as described above, two external pull-up resistors with appropriate values are required to connect each output to an external supply, such that the potential at the open-drain output rises to at least 3 V in less than 10 s after having turned off the corresponding pull-down transistor or after having applied VDD. T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: If the Direction Output is pulled low externally (the potential does not rise after the internal pull-down transistor has been turned off), the device enters Manufacturer Test Mode. Direction detection is not functional in Manufacturer Test Mode. The device returns to normal operation as soon as the Count Output goes high. TAmax = TJmax - T 5.2. Extended Operating Conditions All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see Section 3.5. on page 10). Note: The presence of a Manufacturer Test Mode requires appropriate measures to prevent accidental activation (e.g. in response to EMC events). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas. 16 Sept. 15, 2004; 6251-478-2DS Micronas HAL710, HAL730 DATA SHEET 5.5. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the "Characteristics" (see Section 3.6. on page 10). During the initialization time, the output states are not defined and the outputs can toggle. After ten(O), both outputs will be either high or low for a stable magnetic field (no toggling) and the Count Output will be low if the applied magnetic field B exceeds BON. The Count Output will be high if B drops below BOFF. The Direction Output will have the correct state after the second edge (rising or falling) in the same direction. The device contains a Power-On Reset circuit (POR) generating a reset when VDD rises. This signal is used to disable Test Mode. The generation of this reset signal is guaranteed when VDD at the chip rises to a minimum 3.8 V in less than 4 s monotonically. If this condition is violated, the internal reset signal might be missing. Under these circumstances, the chip will still operate according to the specification, but the risk of toggling outputs during ten(O) increases; and for magnetic fields between BOFF and BON, the output states of the Hall sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field then must exceed BONmax, respectively, drop below BOFFmin. WARNING: DO NOT USE THESE SENSORS IN LIFESUPPORTING SYSTEMS, AVIATION, AND AEROSPACE APPLICATIONS. Micronas Sept. 15, 2004; 6251-478-2DS 17 HAL710, HAL730 DATA SHEET 6. Data Sheet History 1. Data sheet: "HAL710, HAL730 Hall-Effect Sensors with Direction Detection", May 13, 2002, 6251-478-1DS. First release of the data sheet. 2. Data Sheet: "HAL710, HAL730 Hall-Effect Sensors with Direction Detection", Sept. 15, 2004, 6251-478-2DS. Second release of the data sheet. Major changes: - new package diagram for SOT89B-2 Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-478-2DS 18 All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH. Sept. 15, 2004; 6251-478-2DS Micronas