May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
Rating
Unit
Drain-Source Voltage
VDSS
V
Gate-Source Voltage
VGSS
V
Continuous Drain Current (1)
TC=25oC (Silicon limited)
ID
A
TC=25oC (Package limited)
TC=70oC
TA=25oC
TA=70oC
Pulsed Drain Current
IDM
A
Power Dissipation
TC=25oC
PD
23.1
W
TC=70oC
14.8
TA=25oC
3.4(3)
TA=70oC
2.2(3)
Single Pulse Avalanche Energy (2)
EAS
20
mJ
Junction and Storage Temperature Range
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
Rating
Unit
Thermal Resistance, Junction-to-Ambient (1)
RθJA
36
oC/W
Thermal Resistance, Junction-to-Case
RθJC
5.4
MDV1528
Single N-channel Trench MOSFET 30V, 16A, 18.8mΩ
Features
VDS = 30V
ID = 16A @VGS = 10V
RDS(ON)
< 18.8mΩ @VGS = 10V
< 27.8mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
General Description
The MDV1528 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDV1528 is suitable for DC/DC converter and
general purpose applications.
D
G
S
PDFN33
S
S
S
G
G
S
S
S
D
D
D
D
D
D
D
D
May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
Ordering Information
Part Number
Temp. Range
Package
Packing
Quantity
Rohs Status
MDV1528URH
-55~150oC
PowerDFN33
Tape & Reel
5000 units
Halogen Free
Electrical Characteristics (TJ = 25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
BVDSS
ID = 250μA, VGS = 0V
30
-
-
V
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250μA
1.3
1.9
2.7
Drain Cut-Off Current
IDSS
VDS = 30V, VGS = 0V
-
-
1
μA
TJ=55oC
-
-
5
Gate Leakage Current
IGSS
VGS = ±20V, VDS = 0V
-
-
±0.1
Drain-Source ON Resistance
RDS(ON)
VGS = 10V, ID = 8A
-
16.3
18.8
mΩ
TJ=125oC
-
23.6
27.3
VGS = 4.5V, ID = 6A
-
23.2
27.8
Forward Transconductance
gfs
VDS = 5V, ID = 8A
-
12.3
-
S
Dynamic Characteristics
Total Gate Charge
Qg(10V)
VDS = 15.0V, ID = 8A,
VGS = 10V
5.1
7.3
9.5
nC
Total Gate Charge
Qg(4.5V)
2.4
3.5
4.5
Gate-Source Charge
Qgs
-
1.5
-
Gate-Drain Charge
Qgd
-
1.3
-
Input Capacitance
Ciss
VDS = 15.0V, VGS = 0V,
f = 1.0MHz
319
456
593
pF
Reverse Transfer Capacitance
Crss
30
42
56
Output Capacitance
Coss
61
88
114
Turn-On Delay Time
td(on)
VGS = 10V, VDS = 15.0V,
ID = 8A, RG = 3.0Ω
-
5.5
-
ns
Rise Time
tr
-
3.2
-
Turn-Off Delay Time
td(off)
-
13.8
-
Fall Time
tf
-
2.9
-
Gate Resistance
Rg
f=1 MHz
1.0
3.0
4.0
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
VSD
IS = 8A, VGS = 0V
-
0.85
1.1
V
Body Diode Reverse Recovery Time
trr
IF = 8A, dl/dt = 100A/μs
-
16.1
24.2
ns
Body Diode Reverse Recovery Charge
Qrr
-
8.3
12.4
nC
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7)
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 10.8A, VDD = 27V, VGS = 10V..
3. T < 10sec.
May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
Fig.5 Transfer Characteristics
Fig.1 On-Region Characteristics
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
-50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
VGS=10V
ID=8A
RDS(ON), (Normalized)
Drain-Source On-Resistance
TJ, Junction Temperature [oC]
2 4 6 8 10
0
10
20
30
40
※ Notes :
ID = 8A
TA = 25℃
RDS(ON) [mΩ ],
Drain-Source On-Resistance
VGS, Gate to Source Volatge [V]
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
10-1
100
101
TA=25℃
※ Notes :
VGS = 0V
IDR, Reverse Drain Current [A]
VSD, Source-Drain voltage [V]
0 1 2 3 4 5
0
4
8
12
16
VGS, Gate-Source Voltage [V]
TA=25℃
※ Notes :
VDS = 5V
ID, Drain Current [A]
510 15 20
0
5
10
15
20
25
30
VGS = 10V
VGS = 4.5V
Drain-Source On-Resistance [mΩ]
ID, Drain Current [A]
0.0 0.5 1.0 1.5 2.0
0
5
10
15
20
8.0V
4.5V 3.5V
VGS = 10V
5.0V
4.0V
3.0V
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
Fig.9 Maximum Safe Operating Area
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.11 Transient Thermal Response
Curve
0 2 4 6 8
0
2
4
6
8
10
※ Note : ID = 8A
VGS, Gate-Source Voltage [V]
QG, Total Gate Charge [nC]
25 50 75 100 125 150
0
10
20
30
ID, Drain Current [A]
TC, Case Temperature [℃]
10-4 10-3 10-2 10-1 100101102103
10-3
10-2
10-1
100
101
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC
* Rθ JC
(t) + TC
single pulse
D=0.5
0.02
0.2
0.05
0.1
0.01
Zθ JC
, Thermal Response
t1, Rectangular Pulse Duration [sec]
10-1 100101102
10-1
100
101
102
1s 100 ms
DC
10 ms
10s
Operation in This Area
is Limited by R DS(on)
Single Pulse
TJ=Max rated
TC=25℃
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
0 5 10 15 20 25 30
0
100
200
300
400
500
600 Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
Coss
Ciss
Capacitance [pF]
VDS, Drain-Source Voltage [V]
May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
Package Dimension
PowerDFN33 (3.3x3.3mm)
Dimensions are in millimeters, unless otherwise specified
May. 2011. Version1.3 MagnaChip Semiconductor Ltd.
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MDV1528 – Single N-Channel Trench MOSFET 30V
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.