DMC1018UPD COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET POWERDI Product Summary Device V(BR)DSS Q1 12V Q2 -20V Features and Benefits RDS(ON) ID TA = +25C 17m @ VGS = 4.5V 9.5A 25m @ VGS = 2.5V 7.8A 32m @ VGS = -4.5V -6.9A 53m @ VGS = -2.5V -5.4A Thermally Efficient Package-Cooler Running Applications High Conversion Efficiency Low RDS(ON) - Minimizes On State Losses Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This new generation Complementary Pair Enhancement Mode MOSFET has been designed to minimize RDS(ON) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Loadswitch. Notebook Battery Power Management DC-DC Converters Loadswitch Case: PowerDI5060-8 (Type C) Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - 100% Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) D1 D2 G1 S1 Pin1 Top View G2 Bottom View S1 D1 G1 D1 S2 D2 G2 D2 S2 Q1 N-Channel MOSFET Q2 P-Channel MOSFET Top View Pin Configuration Ordering Information (Note 4) Part Number DMC1018UPD-13 Notes: Case PowerDI5060-8 (Type C) Packaging 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information D1 D1 D2 D2 = Manufacturer's Marking C1018UD = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) C1018UD YY WW S1 G1 S2 G2 POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 1 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD Maximum Ratings (@TA = +25C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS VGSS Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25C TA = +70C t<10s TA = +25C TA = +70C Maximum Body Diode Forward Current (Note 5) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 6) L = 0.1mH Avalanche Energy (Note 6) L = 0.1mH Q1 Value 12 Q2 Value -20 Units V 8 12 V ID 9.5 7.6 -6.9 -5.5 A ID 13.0 10.4 -9.4 -7.5 A IS 2.5 IDM 60 20 25 IAS EAS A A A mJ -17 14 Thermal Characteristics Characteristic Symbol TA = +25C Total Power Dissipation (Note 5) PD TA = +70C Steady State t<10s Thermal Resistance, Junction to Ambient (Note 5) RJC 1.5 54 29 6.5 TJ, TSTG -55 to +150 RJA Thermal Resistance, Junction to Case Operating and Storage Temperature Range Value 2.3 Units W C/W C Electrical Characteristics Q1 N-Channel (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Symbol Min Typ Max Unit BVDSS IDSS 12 1 A VGS = 0V, ID = 250A VDS = 12V, VGS = 0V IGSS 100 nA VGS = 8V, VDS = 0V VGS(TH) 0.6 0.8 1.5 V VDS = VGS, ID = 250A 8 17 11 25 RDS(ON) Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD 0.7 1.2 Ciss 1525 Output Capacitance Reverse Transfer Capacitance Coss Crss RG 329 303 1.6 Total Gate Charge (VGS = 4.5V) Qg Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Qg 30.4 Qgs Turn-On Delay Time Qgd tD(ON) 2.6 4.3 6.6 Turn-On Rise Time tR 10.8 Turn-Off Delay Time tD(OFF) -- -- 21.9 Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge tF tRR QRR 17.1 41.5 14.3 2.3 m VGS = 4.5V, ID = 11.8A VGS = 2.5V, ID = 9.8A V VGS = 0V, IS = 2.9A pF VDS = 6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 6V, ID = 11.8A ns VDD = 6V, RL = 6 VGS = 4.5V, RG = 6, ID = 1A Gate Resistance V Test Condition -- -- ns nC IF = 11.8A, di/dt = 100A/s IF = 11.8A, di/dt = 100A/s POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 2 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD Electrical Characteristics Q2 P-Channel (@TA = +25C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Symbol Min Typ Max Unit BVDSS -20 IDSS IGSS -1 V A 100 nA VGS(TH) -0.6 -0.8 -1.5 V RDS(ON) 22 32 31 53 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD -0.7 -1.2 Ciss Output Capacitance Coss Reverse Transfer Capacitance Gate Resistance Crss Total Gate Charge (VGS = -4.5V) RG Qg Total Gate Charge (VGS = -8V) Gate-Source Charge Qg Qgs Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Qgd Turn-On Rise Time tD(ON) tR Turn-Off Delay Time tD(OFF) -- -- Gate-Drain Charge Turn-On Delay Time Body Diode Reverse Recovery Time tRR -- Body Diode Reverse Recovery Charge QRR -- Turn-Off Fall Time Notes: tF m Test Condition VGS = 0V, ID = -250A VDS = -16V, VGS = 0V VGS = 12V, VDS = 0V VDS = VGS, ID = -250A VGS = -4.5V, ID = -8.9A VGS = -2.5V, ID = -6.9A V VGS = 0V, IS = -2.9A pF VDS = -6V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = -6V, ID = -8.9A ns VDD = -6V, RL = 6 VGS = -4.5V, RG = 6, ID = -1A ns IF = -8.9A, di/dt = -100A/s nC IF = -8.9A, di/dt = -100A/s 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 3 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD Typical Characteristics - N-CHANNEL 30 30.0 VDS=5V VGS=4.5V 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 VGS=4.0V VGS=3.5V 20.0 VGS=3.0V 15.0 VGS=2.5V VGS=2.0V 10.0 TA=150 10 TA=125 5 TA=85 VGS=1.2V VGS=1.3V TA=25 TA=-55 0 0.0 0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0 3 0.5 1 1.5 2 VGS, GATE-SOURCE VOLTAGE (V) Figure 2. Typical Transfer Characteristic 2.5 20 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 15 VGS=1.5V 5.0 13 12 VGS=2.5V 11 10 9 8 VGS=4.5V 7 6 5 18 16 14 12 10 ID=11.8A 8 ID=9.8A 6 4 0 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 16 2 4 6 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 8 2 VGS=4.5V 14 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (m) 20 TA=150 12 10 TA=125 TA=85 8 TA=25 6 TA=-55 4 2 VGS=2.5V, ID=9.8A 1.5 1 VGS=4.5V, ID=11.8A 0.5 0 0 0 5 10 15 20 25 30 ID, DRAIN CURRENT(A) Figure 5. Typical On-Resistance vs Drain Current and Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 6. On-Resistance Variation with Junction Temperature POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 4 of 10 www.diodes.com March 2016 (c) Diodes Incorporated 0.02 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMC1018UPD 0.018 0.016 0.014 VGS=2.5V, ID=9.8A 0.012 0.01 0.008 VGS=4.5V, ID=11.8A 0.006 0.004 0.002 1 ID=1mA 0.8 0.6 ID=250A 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 7. On-Resistance Variation with Junction Temperature -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 8. Gate Threshold Variation vs Junction Temperature 10000 30 VGS=0V CT, JUNCTION CAPACITANCE (pF) f=1MHz IS, SOURCE CURRENT (A) 25 20 15 10 TA=150 TA=85 TA=125 5 TA=25 Ciss 1000 Coss Crss 100 TA=-55 0 0 10 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs Current 1.5 0 8 2 4 6 8 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 100 RDS(ON) Limited ID, DRAIN CURRENT (A) 6 VGS (V) 12 4 VDS=6V, ID=11.8A 2 0 10 PW =10s PW =100s PW =1ms PW =10ms PW =100ms 1 PW =1s TJ(Max)=150 TC=25 Single Pulse DUT on Infinite Heatsink VGS=4.5V 0.1 0 5 10 15 20 25 30 35 Qg (nC) Figure 11. Gate Charge 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 5 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD Typical Characteristics - P-CHANNEL 30.0 10 VDS=-5V VGS=-3.0V 8 VGS=-2.5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25.0 20.0 VGS=-3.5V VGS=-4.0V 15.0 VGS=-4.5V VGS=-2.0V 10.0 4 VGS=-1.5V VGS=-1.3V TA=85 TA=25 TA=125 TA=-55 0 0.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE(V) Figure 13. Typical Output Characteristic 0 5 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 14. Typical Transfer Characteristic 3 0.2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 0.05 VGS=-2.5V 0.04 0.03 0.02 VGS=-4.5V 0.01 0.18 0.16 0.14 0.12 0.1 0.08 ID=-8.9A 0.06 0.04 0.02 0 ID=-6.9A 0 0 4 6 8 10 12 14 16 18 20 ID, DRAIN-SOURCE CURRENT (A) Figure 15. Typical On-Resistance vs Drain Current and Gate Voltage 2 0 0.05 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 16. Typical Transfer Characteristic 8 2.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () TA=150 2 5.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 6 VGS=-4.5V 0.04 TA=150 0.03 TA=125 TA=85 TA=25 0.02 TA=-55 0.01 0 0 2 4 6 8 10 12 14 16 18 20 ID, DRAIN CURRENT(A) Figure 17. Typical On-Resistance vs Drain Current and Temperature 2 VGS=-4.5V, ID=-8.9A 1.5 1 VGS=-2.5V, ID=-6.9A 0.5 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 18. On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 6 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD 1.5 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.06 0.05 VGS=-2.5V, ID=-6.9A 0.04 0.03 0.02 VGS=-4.5V, ID=-8.9A 0.01 1.2 0.9 0.6 ID=-250A 0.3 0 0 -50 -50 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 19. On-Resistance Variation with Temperature -25 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE () Figure 20. Gate Threshold Variation vs Junction Temperature 10000 20 f=1MHz CT, JUNCTION CAPACITANCE (pF) VGS=0V 18 16 IS, SOURCE CURRENT (A) ID=-1mA 14 12 10 TA=150 8 6 TA=125 4 TA=25 TA=85 2 TA=-55 Ciss 1000 Coss 100 0 Crss 10 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 21. Diode Forward Voltage vs Current 1.5 0 2 4 6 8 10 12 VDS, DRAIN-SOURCE VOLTAGE(V) Figure 22. Typical Junction Capacitance 10 100 PW =10s RDS(ON) Limited ID, DRAIN CURRENT (A) 8 VDS=-6V, ID=-8.9A VGS (V) 6 4 10 PW =100s PW =1ms PW =10ms PW =100ms PW =1s 1 TJ(Max)=150 TC=25 Single Pulse DUT on Infinite Heatsink VGS=-4.5V 2 0.1 0 0 2 4 6 8 10 12 14 16 Qg (nC) Figure 23. Gate Charge 18 20 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 24. SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 7 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD r(t), TRANSIENT THERMAL RESISTANCE 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RJC (t)=r(t) * RJC RJC=6.5/W Duty Cycle, D=t1/t2 D=0.005 D=Single Pulse 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 t1, PULSE DURATION TIME (sec) 1 10 Figure 25. Transient Thermal Resistance POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 8 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) D D1 0(4x) c x E1 A1 E y Seating Plane e 1 01(4x) O 1.000 Depth 0.07 0.030 b1(8x) DETAIL A e/2 b(8x) 1 b2(2x) D3 L k A k1 E2 L4 D2 M D2 La DETAIL A L1 PowerDI5060-8 (Type C) Dim Min Max Typ A 0.90 1.10 1.00 A1 0 0.05 0.02 b 0.33 0.51 0.41 b1 0.300 0.366 0.333 b2 0.20 0.35 0.25 c 0.23 0.33 0.277 D 5.15 BSC D1 4.85 4.95 4.90 D2 1.40 1.60 1.50 D3 3.98 E 6.15 BSC E1 5.75 5.85 5.80 E2 3.56 3.76 3.66 e 1.27BSC k 1.27 k1 0.56 L 0.51 0.71 0.61 La 0.51 0.71 0.61 L1 0.05 0.20 0.175 L4 0.125 M 3.50 3.71 3.605 x 1.400 y 1.900 10 12 11 1 6 8 7 All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. PowerDI5060-8 (Type C) X4 8 Dimensions X3 C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y1 X2 Y2 Y3 G1 X1 Y(4x) 1 X C Value (in mm) 1.270 0.660 0.820 0.610 3.910 1.650 1.650 4.420 1.270 1.020 3.810 6.610 G POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 9 of 10 www.diodes.com March 2016 (c) Diodes Incorporated DMC1018UPD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright (c) 2016, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMC1018UPD Document number: DS38533 Rev. 2 - 2 10 of 10 www.diodes.com March 2016 (c) Diodes Incorporated