ZXM61P02F 20V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=-20V; RDS(ON)=0.60V; ID=-0.9A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23 FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * SOT23 package APPLICATIONS * DC - DC Converters * Power Management Functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE REEL SIZE (inches) TAPE WIDTH (mm) QUANTITY PER REEL Top View ZXM61P02FTA 7 8mm embossed 3000 units ZXM61P02FTC 13 8mm embossed 10000 units DEVICE MARKING * P02 PROVISIONAL ISSUE A - JULY 1999 73 ZXM61P02F ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage V DSS -20 V Gate- Source Voltage V GS 12 V Continuous Drain Current (V GS=4.5V; T A=25C)(b) (V GS=4.5V; T A=70C)(b) ID -0.9 -0.7 A Pulsed Drain Current (c) I DM -4.9 A Continuous Source Current (Body Diode)(b) IS -0.9 A I SM -4.9 A Power Dissipation at T A=25C (a) Linear Derating Factor PD 625 5 mW mW/C Power Dissipation at T A=25C (b) Linear Derating Factor PD 806 6.4 mW mW/C Operating and Storage Temperature Range T j:T stg -55 to +150 C VALUE UNIT Pulsed Source Current (Body Diode)(c) LIMIT UNIT THERMAL RESISTANCE PARAMETER SYMBOL Junction to Ambient (a) R JA 200 C/W Junction to Ambient (b) R JA 155 C/W NOTES (a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions (b) For a device surface mounted on FR4 PCB measured at t<5 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal Impedance graph. PROVISIONAL ISSUE A - JULY 1999 74 ZXM61P02F Max Power Dissipation (Watts) CHARACTERISTICS 10 1 10m Thermal Resistance (C/W) DC 1s 100ms 10ms 1ms 100m 0.1 1 100 10 Refer Note (b) Refer Note (a) 0.6 0.4 0.2 0 0 20 40 60 100 80 120 Safe Operating Area Derating Curve Refer Note (b) 160 140 120 100 D=0.5 60 40 D=0.2 20 D=0.1 Single Pulse D=0.05 0 0.0001 0.8 T - Temperature (C) 180 80 1.0 -VDS - Drain-Source Voltage (V) Thermal Resistance (C/W) -ID - Drain Current (A) Refer Note (a) 0.001 0.01 0.1 1 160 240 Refer Note (b) 200 160 120 D=0.5 80 40 D=0.2 D=0.1 Single Pulse D=0.05 0 0.0001 0.001 10 140 0.01 0.1 1 10 100 1000 Pulse Width (s) Pulse Width (s) Transient Thermal Impedance Transient Thermal Impedance PROVISIONAL ISSUE A - JULY 1999 75 ZXM61P02F ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. STATIC Drain-Source Breakdown Voltage V (BR)DSS Zero Gate Voltage Drain Current I DSS Gate-Body Leakage I GSS Gate-Source Threshold Voltage V GS(th) Static Drain-Source On-State Resistance (1) R DS(on) Forward Transconductance (3) g fs -20 V I D=-250A, V GS=0V -1 A V DS=-20V, V GS=0V 100 nA V GS= 12V, V DS=0V V I D =-250A, V DS= V GS V GS=-4.5V, I D=-0.61A V GS=-2.7V, I D=-0.31A S V DS=-10V,I D=-0.31A -0.7 0.6 0.9 0.56 DYNAMIC (3) Input Capacitance C iss 150 pF Output Capacitance C oss 70 pF Reverse Transfer Capacitance C rss 30 pF Turn-On Delay Time t d(on) 2.9 ns Rise Time tr 6.7 ns Turn-Off Delay Time t d(off) 11.2 ns Fall Time tf 10.1 Total Gate Charge Qg 3.5 nC Gate-Source Charge Q gs 0.5 nC Gate Drain Charge Q gd 1.5 nC Diode Forward Voltage (1) V SD -0.95 V T j=25C, I S=-0.61A, V GS=0V Reverse Recovery Time (3) t rr 14.9 ns T j=25C, I F=-0.61A, di/dt= 100A/s Reverse Recovery Charge(3) Q rr 5.6 nC V DS=-15 V, V GS=0V, f=1MHz SWITCHING(2) (3) V DD =-10V, I D=-0.93A R G=6.2, R D=11 (Refer to test circuit) ns V DS=-16V,V GS=-4.5V, I D =-0.61A (Refer to test circuit) SOURCE-DRAIN DIODE (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. PROVISIONAL ISSUE A - JULY 1999 76 ZXM61P02F TYPICAL CHARACTERISTICS 10 10 +150C -VGS 4V 4.5V 5V -ID - Drain Current (A) -ID - Drain Current (A) +25C 3.5V 3V 2.5V 1 2V 100m 0.1 1 2.5V 1 2V 100 Output Characteristics 1.7 T=+25C 1 100m VDS=-10V 1.5 2.5 3.5 4.5 -VGS - Gate-Source Voltage (V) VGS=-4.5V -ISD - Reverse Drain Current (A) Vg=-2.5V Vg=-4.5V 1 1 ID=-0.61A 1.3 1.1 0.9 VGS=VDS ID=-250uA 0.7 VGS(th) 0.5 -100 +100 0 +200 Tj - Junction Temperature (C) Normalised RDS(on) and VGS(th) v Temperature 10 0.1 RDS(on) 1.5 Typical Transfer Characteristics RDS(on) - Drain-Source On-Resistance () 10 Output Characteristics T=+150C 100m 0.1 -VDS - Drain-Source Voltage (V) Normalised RDS(on) and VGS(th) -ID - Drain Current (A) 3.5V -VDS - Drain-Source Voltage (V) 10 10m -VGS 4.5V 4V 3V 100m 100 10 5V 10 10 1 100m T=+150C T=+25C 10m 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -ID - Drain Current (A) -VSD - Source-Drain Voltage (V) On-Resistance v Drain Current Source-Drain Diode Forward Voltage PROVISIONAL ISSUE A - JULY 1999 77 ZXM61P02F C - Capacitance (pF) 350 -VGS - Gate-Source Voltage (V) TYPICAL CHARACTERISTICS Vgs=0V f=1MHz 300 250 Ciss 200 Coss Crss 150 100 50 0 0.1 1 10 100 5 ID=-0.61A 4 VDS=-16V 3 2 1 0 0 0.5 1 1.5 2 2.5 3 -VDS - Drain Source Voltage (V) Q -Charge (nC) Capacitance v Drain-Source Voltage Gate-Source Voltage v Gate Charge Basic Gate Charge Waveform Gate Charge Test Circuit Switching Time Test Circuit Switching Time Waveforms PROVISIONAL ISSUE A - JULY 1999 78 ZXM61P02F PAD LAYOUT DETAILS N PACKAGE DIMENSIONS DIM Millimetres Inches Min Max Min Max A 2.67 3.05 0.105 0.120 B 1.20 1.40 0.047 0.055 C - 1.10 - 0.043 D 0.37 0.53 0.0145 0.021 F 0.085 0.15 0.0033 0.0059 G NOM 1.9 K 0.01 0.10 0.0004 0.004 L 2.10 2.50 0.0825 0.0985 N NOM 0.95 NOM 0.075 NOM 0.037 Zetex plc. Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom. Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) Fax: (44)161 622 4420 Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 Zetex Inc. 47 Mall Drive, Unit 4 Commack NY 11725 USA Telephone: (516) 543-7100 Fax: (516) 864-7630 Zetex (Asia) Ltd. 3510 Metroplaza, Tower 2 Hing Fong Road, Kwai Fong, Hong Kong Telephone:(852) 26100 611 Fax: (852) 24250 494 These are supported by agents and distributors in major countries world-wide Zetex plc 1999 Internet:http://www.zetex.com This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. PROVISIONAL ISSUE A - JULY 1999 80