20V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXM61P02F
SUMMARY
V(BR)DSS=-20V; RDS(ON)=0.60V; ID=-0.9A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
FEATURES
•Low on-resistance
•Fast switching speed
•Low threshold
•Low gate drive
•SOT23 package
APPLICATIONS
•DC - DC Converters
•Power Management Functions
•Disconnect switches
•Motor control
ORDERING INFORMATION
DEVICE REEL SIZE
(inches) TAPE WIDTH (mm) QUANTITY
PER REEL
ZXM61P02FTA 7 8mm embossed 3000 units
ZXM61P02FTC 13 8mm embossed 10000 units
DEVICE MARKING
•P02
Top View
SOT23
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PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
THERMAL RESISTANCE
PARAMETER SYMBOL VALUE UNIT
Junction to Ambient (a) RθJA 200 °C/W
Junction to Ambient (b) RθJA 155 °C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t<5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
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ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage VDSS -20 V
Gate- Source Voltage VGS ± 12 V
Continuous Drain Current (VGS=4.5V; TA=25°C)(b)
(V
GS=4.5V; TA=70°C)(b) ID-0.9
-0.7 A
Pulsed Drain Current (c) IDM -4.9 A
Continuous Source Current (Body Diode)(b) IS-0.9 A
Pulsed Source Current (Body Diode)(c) ISM -4.9 A
Power Dissipation at TA=25°C (a)
Linear Derating Factor PD625
5mW
mW/°C
Power Dissipation at TA=25°C (b)
Linear Derating Factor PD806
6.4 mW
mW/°C
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
0.0001 0.1 10
080160
-VDS - Drain-Source Voltage (V)
Safe Operating Area
10m
100m
-I
D
- Drain Current (A)
D=0.2
D=0.1
Thermal Resistance (°C/W)
180
80 D=0.5
0
Pulse Width (s)
Transient Thermal Impedance
Max Power Dissipation (Watts)
1.0
0.6
0
T - Temperature (°C)
Derating Curve
Refer Note (a)
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Transient Thermal Impedance
0.0001
0
Pulse Width (s)10 1000
120
240
Single Pulse
D=0.5
D=0.05
D=0.2
D=0.1
0.8
0.4
0.2
20 40 60 100 120 140
Refer Note (b)
Refer Note (b) Refer Note (b)
20
40
60
100
120
140
160
0.001 0.01 1
200
160
40
80
0.001 0.01 0.1 1 100
CHARACTERISTICS
0.1 100
10
1
101
DC
1s
100ms
10ms
1ms
Refer Note (a)
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PROVISIONAL ISSUE A - JULY 1999
76
ZXM61P02F
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
STATIC
Drain-Source Breakdown Voltage V(BR)DSS -20 V ID=-250µA, VGS=0V
Zero Gate Voltage Drain Current IDSS -1 µAVDS
=-20V, VGS=0V
Gate-Body Leakage IGSS ±100 nA VGS=± 12V, VDS=0V
Gate-Source Threshold Voltage VGS(th) -0.7 V ID=-250µA, VDS
= VGS
Static Drain-Source On-State Resistance
(1) RDS(on) 0.6
0.9 Ω
ΩVGS=-4.5V, ID=-0.61A
VGS=-2.7V, ID=-0.31A
Forward Transconductance (3) gfs 0.56 S VDS
=-10V,ID=-0.31A
DYNAMIC (3)
Input Capacitance Ciss 150 pF VDS
=-15 V, VGS=0V,
f=1MHz
Output Capacitance Coss 70 pF
Reverse Transfer Capacitance Crss 30 pF
SWITCHING(2) (3)
Turn-On Delay Time td(on) 2.9 ns
VDD
=-10V, ID=-0.93A
RG=6.2Ω, RD=11Ω
(Refer to test circuit)
Rise Time tr6.7 ns
Turn-Off Delay Time td(off) 11.2 ns
Fall Time tf10.1 ns
Total Gate Charge Qg3.5 nC VDS
=-16V,VGS=-4.5V,
ID=-0.61A
(Refer to test circuit)
Gate-Source Charge Qgs 0.5 nC
Gate Drain Charge Qgd 1.5 nC
SOURCE-DRAIN DIODE
Diode Forward Voltage (1) VSD -0.95 V Tj=25°C, IS=-0.61A,
VGS=0V
Reverse Recovery Time (3) trr 14.9 ns Tj=25°C, IF=-0.61A,
di/dt= 100A/µs
Reverse Recovery Charge(3) Qrr 5.6 nC
(1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - JULY 1999
ZXM61P02F
77
0.1 1 100
1.5 2.5
0.1 1 10 0.2 0.8 1.4
+200+100-100
0.1 10 100
-VDS - Drain-Source Voltage (V)
Output Characteristics
100m
1
10
-I
D
- Drain Current (A)
-VGS
3V
VDS=-10V
-ID - Drain Current (A)
10
1
10m
-VGS - Gate-Source Voltage (V)
Typical Transfer Characteristics
R
DS(on)
- Drain-Source On-Resistance (Ω)
10
1
100m
-ID- Drain Current (A)
On-Resistance v Drain Current
-I
D
- Drain Current (A)
10
1
100m
-VDS - Drain-Source Voltage (V)
Output Characteristics
Normalised R
DS(on)
and V
GS(th)
1.7
1.1
0.5
Tj- Junction Temperature (°C)
Normalised RDS(on) and VGS(th)
v Temperature
-I
SD
- Reverse Drain Current (A)
10
1
10m
-VSD - Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
T=+150°C
T=+25°C
T=+150°C
VGS=-4.5V
T=+25°C
RDS(on)
ID=-0.61A
VGS=VDS
ID=-250uA
VGS(th)
0.4 0.6 1.0 1.2
100m
Vg=-2.5V
Vg=-4.5V
1.5
1.3
0.9
0.7
0
3.5 4.5
100m
10
3.5V
2.5V
2V
5V 4.5V 4V
2V
2.5V
3V
3.5V
-VGS
4V
4.5V
5V
+150°C+25°C
TYPICAL CHARACTERISTICS
PROVISIONAL ISSUE A - JULY 1999
0.1 10 100 0 3
-VDS - Drain Source Voltage (V)
Capacitance v Drain-Source Voltage
0
200
350
C - Capacitance (pF)
ID=-0.61A
-V
GS
- Gate-Source Voltage (V)
5
0
Q -Charge (nC)
Gate-Source Voltage v Gate Charge
VDS=-16V
Coss
Crss
Vgs=0V
f=1MHz
1
Ciss
300
250
150
100
50
0.5 1 1.5 2 2.5
1
2
3
4
TYPICAL CHARACTERISTICS
Basic Gate Charge Waveform Gate Charge Test Circuit
Switching Time Waveforms Switching Time Test Circuit
ZXM61P02F
78
PROVISIONAL ISSUE A - JULY 1999
N
PACKAGE DIMENSIONS PAD LAYOUT DETAILS
DIM Millimetres Inches
Min Max Min Max
A 2.67 3.05 0.105 0.120
B 1.20 1.40 0.047 0.055
C– 1.10 – 0.043
D 0.37 0.53 0.0145 0.021
F 0.085 0.15 0.0033 0.0059
G NOM 1.9 NOM 0.075
K 0.01 0.10 0.0004 0.004
L 2.10 2.50 0.0825 0.0985
N NOM 0.95 NOM 0.037
ZXM61P02F
80
Zetex plc.
Fields New Road, Chadde rt on, Oldha m, OL9 -8NP, Unit ed Kingdom .
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
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This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
PROVISIONAL ISSUE A - JULY 1999
