AON6160 60V N-Channel AlphaSGT TM General Description Product Summary * Trench Power AlphaSGTTM technology * Low RDS(ON) * Low Gate Charge * Optimized for fast-switching applications * RoHS and Halogen-Free Compliant VDS Applications ID (at VGS=10V) 60V 100A RDS(ON) (at VGS=10V) < 1.58m 100% UIS Tested 100% Rg Tested * Synchronous Rectification in DC/DC and AC/DC Converters * Industrial and Motor Drive applications D DFN5x6 Top View Top View Bottom View 1 8 2 7 3 6 4 5 G PIN1 S PIN1 Orderable Part Number Package Type Form Minimum Order Quantity AON6160 DFN 5x6 Tape & Reel 3000 Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25C Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.3mH VDS Spike 10s TC=25C Power Dissipation B C Junction and Storage Temperature Range Rev.3.0: August 2016 53 A EAS 421 mJ 72 V 215 Steady-State Steady-State W 86 7.3 W 4.7 TJ, TSTG Symbol t 10s A IAS PDSM TA=70C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 49 PD TA=25C Power Dissipation A A 39 VSPIKE TC=100C V 400 IDSM TA=70C 20 100 IDM TA=25C Units V 100 ID TC=100C Maximum 60 RJA RJC -55 to 150 Typ 14 40 0.43 www.aosmd.com C Max 17 50 0.58 Units C/W C/W C/W Page 1 of 6 AON6160 Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions ID=250A, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=20V Gate Threshold Voltage VDS=VGS, ID=250A Static Drain-Source On-Resistance Typ TJ=55C VGS=10V, ID=20A TJ=125C 100 nA 2.55 3.4 V 1.3 1.58 2.2 2.7 gFS Forward Transconductance VDS=5V, ID=20A 90 Diode Forward Voltage IS=1A, VGS=0V 0.66 IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=30V, f=1MHz f=1MHz Gate Source Charge Qgd m S 1 V 100 A pF 5180 6485 7790 730 1050 1370 pF 5 30 55 pF 0.5 1.1 1.7 85 120 nC SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A 5 2.1 Units V 1 VSD Coss Max 60 VDS=60V, VGS=0V IDSS RDS(ON) Min VGS=10V, VDS=30V, ID=20A 24.5 nC Gate Drain Charge 13 nC tD(on) Turn-On DelayTime 19 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=20A, di/dt=500A/s 15 33 50 Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/s 110 176 250 Body Diode Reverse Recovery Time VGS=10V, VDS=30V, RL=1.5, RGEN=3 10.5 ns 51 ns 12 ns ns nC A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The Power dissipation PDSM is based on R JA t 10s and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=150C. D. The RJA is the sum of the thermal impedance from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.3.0: August 2016 www.aosmd.com Page 2 of 6 AON6160 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 4.5V VDS=5V 80 80 6V 10V ID (A) 60 ID (A) 60 4V 40 125C 40 25C 20 20 VGS=3.5V 0 0 0 1 2 3 4 1 5 3 4 5 VGS (Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 4 Normalized On-Resistance 2 3 RDS(ON) (m) 2 2 VGS=10V 1 1.8 VGS=10V ID=20A 1.6 1.4 1.2 1 0.8 0 0 5 10 15 20 25 0 30 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 4 1.0E+01 ID=20A 1.0E+00 125C 125C 1.0E-01 IS (A) RDS(ON) (m) 3 2 1.0E-02 25C 1.0E-03 1 25C 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.3.0: August 2016 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AON6160 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8000 VDS=30V ID=20A Ciss 7000 8 Capacitance (pF) VGS (Volts) 6000 6 4 2 5000 4000 3000 2000 Coss Crss 1000 0 0 0 20 40 60 80 100 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 500 10s 10.0 DC TJ(Max)=150C TC=25C 400 10s 100s 1ms 10ms TJ(Max)=150C TC=25C Power (W) RDS(ON) limited 100.0 ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 1000.0 1.0 10 300 200 100 0.1 0.0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 10V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 100 0 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZJC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZJC.RJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RJC=0.58C/W 1 0.1 PDM Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.3.0: August 2016 www.aosmd.com Page 4 of 6 AON6160 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 250 120 100 Current rating ID (A) Power Dissipation (W) 200 150 100 50 80 60 40 20 0 0 0 25 50 75 100 125 150 0 25 TCASE (C) Figure 12: Power De-rating (Note F) 50 75 100 125 150 TCASE (C) Figure 13: Current De-rating (Note F) 10000 TA=25C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 ZJA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 PDM Single Pulse Ton 0.001 0.0001 0.001 0.01 0.1 1 10 T 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.3.0: August 2016 www.aosmd.com Page 5 of 6 AON6160 Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.3.0: August 2016 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6