1N4148 1N4150 1N4448 Diode, switching, leaded 1N914 1N4153 1N4606 1N916 These diodes are in a glass sealed Dimensions (Units : mm) envelope and are suitable for lead mounting on printed circuit boards. CATHODE AND Features eee * available in DO-35 package aot a (4) * part marking, see following table rl | Applications 2g | | 3.8+0,2 29+ oreo? * general rectification Cathode band color and marking Part no. Color Marking 1N4148 Black 1N4148R 1N4150 Black 1N4150R 1N4153 Black 1N4153R 1N4448 Black 1N4448R 1N4606 Black 1N4606R 1N914 Black 1N914R 1N916 Black 1N916R Absolute maximum ratings (T, = 25C) Peak DC Peak Mean Peak Power | Junction reverse | reverse | forward | rectifying} Forward | forward | dissip- | temper- Operating Storage Part no. | voltage | voltage | current current | current } tus ation ature temperature | temperature Vam() | Va() |trw(mA)| to (mA) | te(ma) | CA) | Pam) | T)CC) | Top (C) | Tatg (C) 1N4148 100 75 450 150 200 2 500 200 | -65 ~ +200 | -65 ~ +200 1N4150 50 50 600 200 250 4 500 200 | -65 ~ +200 | -65 ~ +200 1N4153 | 75 50 450 150 200 2 500 200 | -65 ~ +200 | -65 ~ +200 1N4448 100 75 450 150 200 2 500 200 65 ~ +200 | -65 ~ +200 1N4606 85 70 600 200 250 4 500 200 65 ~ +200 | 65 ~ +200 1N914 100 75 450 150 200 2 500 200 | -65 ~ +200 | -65 ~ +200 1N916 100 75 450 150 200 2 500 200 | -65 ~ +200 | -65 ~ +200 58 ROM Diodes Switching diodes 1N4148, 1N914, 1N916, 1N4150, 1N4153, 1N4448, 1N4606 Electrical characteristics (unless otherwise noted, T, = 25C) Forward voltage Vr (V) hd Reena wap Rev rec rare 8 Tebel ecletaetel 88/8] [ol Soleo] pel petremltes ma | ma | 1 MA|ZMA/S MA) a | ma | mA | ma | ma | ma | SHA] HA yj a eee F-10020 1N4148 a 75 | 100 |9225] 28 |s0.0] 20] 4 | 4 1N4150 058 oaal legelossicne 50 | 0.1 | 50 }100] 50] 25 | 4 1N4153 |O22}053) 0.59 hee 9008 75 0.05| 50 |s0.0] so} 2 | 2 1N4448 oe 0 100 | 2222 2 50.0] 20} 4 4 inasos [222/03 oS) eb os| rool TT a5 | S40 | 3 25.0] 39] 25 | 4 1N914 - 75 | 100 }9925| 22 |s0.0] 20 | 4 | 4 1N916 no 100 |2225} 22 soo] 20] 2 | 4 1. The upper value for Ve refers to Ve min and the lower to Vp max. Electrical characteristic curves 1N4148, 1N4446, 1N4448, 1N914 400 50 <q a f = 20 < & = . | L 2 2 uy ig ne c g iva 2 5 oO 5 4 Ww a a = ra z W o Wi aL 0 oc 02 04 06 08 10 12 14 16 FORWARD VOLTAGE : Vr (V} REVERSE VOLTAGE : Va (V) Figure 1 Figure 2 Diodes Ronm 59 1N4148, 1N914, 1N916, 1N4150, 1N4153, 1N4448, 1N4606 Switching diodes i 30 - 1 1 MHz Va=6V 2 25h-- + - |---+ @ n Aber 4d = g we = 20--- soe +4 w = 2 ti Fp 4 > x z 15 PS _ tT Oo & td > uu | 2 "| = [cece oO L f 1.0 op w TT o lu 3 & . Le jd Z 05} pe ep ee uw a > E WJ g Cc 0 < 6 5 10 15 20 25 30 0 4 12 16 20 REVERSE VOLTAGE : Va (V) FORWARD CURRENT : lr (mA) Figure 3 Figure 4 @ 3 - Zz uu c co 2 oO w Qo a ~ n 0.1 10 100 1000 10000 PULSE WIDTH : Tw (ms) Figure 5 60 ROHM Diodes Switching diodes 1N4148, 1N914, 1N916, 1N4150, 1N4153, 1N4448, 1N4606 Electrical characteristic curves 1N4150 100 100 4 50 125C _ Jpn q = 10 ub <= 4 E 29 < a) 100C & = nent z 2 | ape + -75 C4 po Ys __|+- c x _ 5 53 50C 100n op 2 Ww [ene = 5 || pL re z a4 + o # On a 05 a 0.2 in ! 2 04 06 O08 10 12 14 16 9 20 40 60 0 TOO FORWARD VOLTAGE : Vr (V) REVERSE VOLTAGE : Va iV; Figure 6 Figure 7 ~ 12 12 : 1 e f- 1 MHz, i | 5 OSC = 0.05 V @ ig] Va 6V 10k _. _ =~ Ta 25C a I = rr 1 10dR a este, oan a Ww Z 0.8F- 2 8 2 e H g > 06 Wi 6 W \ Q W tw z 0.4F 4 4b a i ra oc ut 2 | Wl . Z 0.2 > 2 KE x Zo oL__| | a 0 5 10 15 20 25 30 36 0 20 42440 #2460 #80 100 120 REVERSE VOLTAGE : Va (V} FORWARD CURRENT : Ir nA; Figure 8 Figure 9 LSE TL ae SURGE CURRENT Isuge (A) 10? 107 10! 0 PULSE WIDTH : Tw (ms) Figure 10 Diodes ROM 61 1N4148, 1N914, 1N916, 1N4150, 1N4153, 1N4448, 1N4606 Switching diodes Electrical characteristic curves 1N4153, 1N916 200 100 < 50 - E < Cc uw T 20}-- = kK 7 2 | &b io Zz x w a 5 xc 2D _ ac oO 2 ao Rot ot ttifo ts 3 Cc lu co 8 2 a z 1 wi in a 0.5 oc 0.2 0 . 1. 5 38 FORWARD VOLTAGE : Vr (Vv) REVERSE VOLTAGE : Ve (V) Figure 11 Figure 12 me 6 T 100 = f 1 MHz Va 6V 5 _ yoo f } t+ 1 10IR / 75 - Y - REVERSE RECOVERY TIME : tr- (ns) n -t _ Zz - . . = a. ud - z 3p 4 - se a WW = Lo Ba fo 25L- Y few. fd ui QO Zz iP--y oF at F g oO 0 4 0 5 1G 715 25-30 o 5 #10 #2168 4 25 30 REVERSE VOLTAGE : Va (V) FORWARD CURRENT : ir (mA) Figure 13 Figure 14 14 iT T TT Ty | II Ta 25C raft LL | Single pulse 0.01 pF Diode under test . ! || | | to TL |} -b e | ONU YT Tm 7 oe | 1 4 WN | S 7 Ha | Pulse generator 5kQ Sampling Z ar \ Output: 50 W 50 2 | oscilloscope el .j Nt UIE UTM a i hy r 2 NA if. ial 4b + 1+ 4h % att. 3 4{ rh Test circuit for measurin ij reverse recovery time (9 | orm Im 10m oom 1 10 PULSE WIDTH ; Tw (ms) Figure 15 Figure 16 62 RonNmM Diodes