TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
1
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
D
Wide Range of Supply Voltages
1.4-V to 16-V
D
True Single-Supply Operation
D
Common-Mode Input Voltage Range
Includes the Negative Rail
D
Low Noise . . . 30 nV/√Hz Typ at 1-kHz
(High Bias)
D
ESD Protection Exceeds 2000 V Per
MIL-STD-833C, Method 3015.1
description
The TLC251C, TLC251AC, and TLC251BC are
low-cost, low-power programmable operational
amplifiers designed to operate with single or dual
supplies. Unlike traditional metal-gate CMOS
operational amplifiers, these devices utilize T exas
Instruments silicon-gate LinCMOS process,
giving them stable input offset voltages without
sacrificing the advantages of metal-gate CMOS.
This series of parts is available in selected grades of input offset voltage and can be nulled with one external
potentiometer. Because the input common-mode range extends to the negative rail and the power consumption
is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A
bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the
application. The series features operation down to a 1.4-V supply and is stable at unity gain.
These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures
at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However , care should be exercised
in handling these devices as exposure to ESD may result in a degradation of the device parametric
performance.
Because of the extremely high input impedance and low input bias and offset currents, applications for the
TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any
circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective
use of these devices. Many features associated with bipolar technology are available with LinCMOS
operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible
equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.
In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers
can have software-controlled performance and power consumption. The TLC251C series is well suited to solve
the difficult problems associated with single battery and solar cell-powered applications.
The TLC251C series is characterized for operation from 0°C to 70°C.
AVAILABLE OPTIONS
VIOmax
PACKAGED DEVICES
CHIP FORM
TA
V
IO
max
AT 25°CSMALL OUTLINE
(D) PLASTIC DIP
(P)
CHIP
FORM
(Y)
10 mV TLC251CD TLC251CP TLC251Y
0°C to 70°C5 mV TLC251ACD TLC251ACP —
2 mV TLC251BCD TLC251BCP —
The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are
tested at 25°C.
Copyright 2001, Texas Instruments Incorporated
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
LinCMOS is a trademark of Texas Instruments.
1
2
3
4
8
7
6
5
OFFSET N1
IN–
IN+
VDD–/GND
BIAS SELECT
VDD
OUT
OFFSET N2
D OR P PACKAGE
(TOP VIEW)
symbol
+
–OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
2POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
schematic
Current
Control
ESD-
Protective
Network
ESD-
Protective
Network
ESD-
Protective
Network
VDD
IN+
IN–
OFFSET
N1
OFFSET
N2
VDD–/GND
OUT
BIAS
SELECT
7
3
2
1
5
4
6
8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
3
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TLC251Y chip information
These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or
ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive
epoxy or a gold-silicon preform.
BONDING PAD ASSIGNMENTS
CHIP THICKNESS: 15 TYPICAL
BONDING PADS: 4 × 4 MINIMUM
TJMAX = 150°C
TOLERANCES ARE ±10%.
ALL DIMENSIONS ARE IN MILS.
PIN (4) IS INTERNALLY CONNECTED
TO BACKSIDE OF CHIP.
+
–OUT
BIAS SELECT
IN+
IN–
OFFSET N1
OFFSET N2
VDD
VDD–/GND
(7)
(6)
(8)
(3)
(2)
(1)
(5) (4)
48
55
(2) (1) (8) (7)
(6)(5)(3) (4)
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
4POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)†
Supply voltage, VDD (see Note 1) 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Differential input voltage, VID (see Note 2) ±18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Input voltage range, VI (any input) –0.3 V to 18 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Duration of short circuit at (or below) 25°C free-air temperature (see Note 3) unlimited. . . . . . . . . . . . . . . . . .
Continuous total dissipation See Dissipation Rating Table. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA 0°C to 70°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range –65°C to 150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
†Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only , and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may af fect device reliability.
NOTES: 1. All voltage values, except differential voltages, are with respect to VDD–/GND.
2. Differential voltages are at IN+ with respect to IN–.
3. The output may be shorted to either supply . T emperature and/or supply voltages must be limited to ensure the maximum dissipation
rating is not exceeded.
DISSIPATION RATING TABLE
PACKAGE TA ≤ 25°C
POWER RATING DERATING FACTOR
ABOVE TA = 25°CTA = 70°C
POWER RATING
D725 mW 5.8 mW/°C464 mW
P1000 mW 8.0 mW/°C640 mW
recommended operating conditions
MIN MAX UNIT
Supply voltage, VDD 1.4 16 V
VDD = 1.4 V 0 0.2
Common mode in
p
ut voltage VIC
VDD = 5 V –0.2 4
V
Common
-
mode
input
voltage
,
V
IC VDD = 10 V –0.2 9
V
VDD = 16 V –0.2 14
Operating free-air temperature, TA0 70 °C
Bias-select voltage See Application
Information
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
5
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
electrical characteristics at specified free-air temperature
TEST
†
TLC251C, TLC251AC, TLC251BC
PARAMETER TEST
CONDITIONS
TA
†
VDD = 5 V VDD = 10 V UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
TLC251C
25°C 1.1 10 1.1 10
TLC251C
VO=14V
Full range 12 12
VIO
p
TLC251AC
VO
=
1
.
4
V
,
V
IC
= 0 V, 25°C 0.9 5 0.9 5
mV
V
IO
TLC251AC
IC ,
RS = 50 Ω,
R10kΩ
Full range 6.5 6.5
mV
TLC251BC
RL = 10 kΩ25°C 0.34 2 0.39 2
TLC251BC
Full range 3 3
αVIO Average temperature coef ficient of
input offset voltage 25°C to
70°C1.8 2 µV/°C
IIO
In
p
ut offset current (see Note 4)
V
O
= V
DD
/2, 25°C 0.1 60 0.1 60 p
A
I
IO
Input
offset
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 7 300 7 300
pA
IIB
In
p
ut bias current (see Note 4)
V
O
= V
DD
/2, 25°C 0.6 60 0.7 60 p
A
I
IB
Input
bias
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 40 600 50 600
pA
VICR
Common-mode input volta
g
e25°C–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2 V
V
ICR
g
range (see Note 5) Full range –0.2
to
3.5
–0.2
to
8.5 V
V 100 V
25°C 3.2 3.8 8 8.5
VOH High-level output voltage VID = 100 mV,
RL=10kΩ
0°C 3 3.8 7.8 8.5 V
RL
=
10
kΩ
70°C 3 3.8 7.8 8.4
V 100 V
25°C 0 50 0 50
VOL Low-level output voltage VID = –100 mV,
IOL =0
0°C 0 50 0 50 mV
IOL
=
0
70°C 0 50 0 50
L i l diff ti l lt
R10kΩ
25°C 5 23 10 36
AVD Large-signal differential voltage
am
p
lification
RL = 10 kΩ,
See Note 6
0°C 4 27 7.5 42 V/mV
am lification
See
Note
6
70°C 4 20 7.5 32
25°C 65 80 65 85
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 84 60 88 dB
70°C 60 85 60 88
S l lt j ti ti
V 5Vt 10V
25°C 65 95 65 95
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V,
VO=14V
0°C 60 94 60 94 dB
(∆VDD/∆VIO)
VO
=
1
.
4
V
70°C 60 96 60 96
II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25°C–1.4 –1.9 µA
V
O
= V
DD
/2
,
25°C 675 1600 950 2000
IDD Supply current
VO
VDD/2,
VIC = VDD/2,
Nl d
0°C 775 1800 1125 2200 µA
No load 70°C 575 1300 750 1700
†Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
6POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
HIGH-BIAS MODE
operating characteristics, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 3.6
VI
(
PP
)
= 1 V 0°C 4
SR
Slew rate at unity gain
RL=10kΩ
CL=20
p
F
()
70°C 3
V/µs
SR
Slew
rate
at
unity
gain
R
L =
10
kΩ
,
C
L =
20
pF
25°C 2.9
V/
µ
s
VI
(
PP
)
= 2.5 V 0°C 3.1
()
70°C 2.5
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 25 nV/√Hz
25°C 320
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ0°C340 kHz
70°C 260
25°C 1.7
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C2MHz
70°C 1.3
25°C 46°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C47°
70°C 44°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 5.3
VI
(
PP
)
= 1 V 0°C 5.9
SR
Slew rate at unity gain
RL=10kΩ
CL=20
p
F
()
70°C 4.3
V/µs
SR
Slew
rate
at
unity
gain
R
L =
10
kΩ
,
C
L =
20
pF
25°C 4.6
V/
µ
s
VI(PP) = 5.5 V 0°C 5.1
()
70°C 3.8
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 25 nV/√Hz
25°C 200
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 10 kΩ0°C220 kHz
70°C 140
25°C 2.2
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C2.5 MHz
70°C 1.8
25°C 49°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C 50°
70°C 46°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
7
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
electrical characteristics at specified free-air temperature
TEST
†
TLC251C, TLC251AC, TLC251BC
PARAMETER TEST
CONDITIONS
TA
†
VDD = 5 V VDD = 10 V UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
TLC251C
25°C 1.1 10 1.1 10
TLC251C
VO=14V
Full range 12 12
VIO
p
TLC251AC
VO
=
1
.
4
V
,
V
IC
= 0 V, 25°C 0.9 5 0.9 5
mV
V
IO
TLC251AC
IC ,
RS = 50 Ω,
R10kΩ
Full range 6.5 6.5
mV
TLC251BC
RL = 10 kΩ25°C 0.34 2 0.39 2
TLC251BC
Full range 3 3
αVIO Average temperature coef ficient of
input offset voltage 25°C to
70°C1.7 2.1 µV/°C
IIO
In
p
ut offset current (see Note 4)
V
O
= V
DD
/2, 25°C 0.1 60 0.1 60 p
A
I
IO
Input
offset
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 7 300 7 300
pA
IIB
In
p
ut bias current (see Note 4)
V
O
= V
DD
/2, 25°C 0.6 60 0.7 60 p
A
I
IB
Input
bias
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 40 600 50 600
pA
VICR
Common-mode input volta
g
e25°C–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2 V
V
ICR
g
range (see Note 5) Full range –0.2
to
3.5
–0.2
to
8.5 V
V 100 V
25°C 3.2 3.9 8 8.7
VOH High-level output voltage VID = 100 mV,
RL=10kΩ
0°C 3 3.9 7.8 8.7 V
RL
=
10
kΩ
70°C 3 4 7.8 8.7
V 100 V
25°C 0 50 0 50
VOL Low-level output voltage VID = –100 mV,
IOL =0
0°C 0 50 0 50 mV
IOL
=
0
70°C 0 50 0 50
L i l diff ti l lt
R10kΩ
25°C 25 170 25 275
AVD Large-signal differential voltage
am
p
lification
RL = 10 kΩ,
See Note 6
0°C 15 200 15 320 V/mV
am lification
See
Note
6
70°C 15 140 15 230
25°C 65 91 65 94
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 91 60 94 dB
70°C 60 92 60 94
S l lt j ti ti
V 5Vt 10V
25°C 70 93 70 93
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V,
VO=14V
0°C 60 92 60 92 dB
(∆VDD/∆VIO)
VO
=
1
.
4
V
70°C 60 94 60 94
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25°C–130 –160 nA
V
O
= V
DD
/2
,
25°C 105 280 143 300
IDD Supply current
VO
VDD/2,
VIC = VDD/2,
Nl d
0°C 125 320 173 400 µA
No load 70°C 85 220 110 280
†Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
8POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
MEDIUM-BIAS MODE
operating characteristics, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 0.43
VI
(
PP
)
= 1 V 0°C 0.46
SR
Slew rate at unity gain
RL= 100 kΩ
CL=20
p
F
()
70°C 0.36
V/µs
SR
Slew
rate
at
unity
gain
R
L =
100
kΩ
,
C
L =
20
pF
25°C 0.40
V/
µ
s
VI
(
PP
)
= 2.5 V 0°C 0.43
()
70°C 0.34
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 32 nV/√Hz
25°C 55
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 100 kΩ0°C60 kHz
70°C 50
25°C 525
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C600 kHz
70°C 400
25°C 40°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C41°
70°C 39°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 0.62
VI
(
PP
)
= 1 V 0°C 0.67
SR
Slew rate at unity gain
RL= 100 kΩ
CL=20
p
F
()
70°C 0.51
V/µs
SR
Slew
rate
at
unity
gain
R
L =
100
kΩ
,
C
L =
20
pF
25°C 0.56
V/
µ
s
VI(PP) = 5.5 V 0°C 0.61
()
70°C 0.46
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 32 nV/√Hz
25°C 35
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 100 kΩ0°C40 kHz
70°C 30
25°C 635
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C710 kHz
70°C 510
25°C 43°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C 44°
70°C 42°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
9
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
electrical characteristics at specified free-air temperature
TEST
†
TLC251C, TLC251AC, TLC251BC
PARAMETER TEST
CONDITIONS
TA
†
VDD = 5 V VDD = 10 V UNIT
CONDITIONS
A
MIN TYP MAX MIN TYP MAX
TLC251C
25°C 1.1 10 1.1 10
TLC251C
VO=14V
Full range 12 12
VIO
p
TLC251AC
VO
=
1
.
4
V
,
V
IC
= 0 V, 25°C 0.9 5 0.9 5
mV
V
IO
TLC251AC
IC ,
RS = 50 Ω,
R10MΩ
Full range 6.5 6.5
mV
TLC251BC
RL = 10 MΩ25°C 0.24 2 0.26 2
TLC251BC
Full range 3 3
αVIO Average temperature coef ficient of
input offset voltage 25°C to
70°C1.1 1 µV/°C
IIO
In
p
ut offset current (see Note 4)
V
O
= V
DD
/2, 25°C 0.1 60 0.1 60 p
A
I
IO
Input
offset
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 7 300 7 300
pA
IIB
In
p
ut bias current (see Note 4)
V
O
= V
DD
/2, 25°C 0.6 60 0.7 60 p
A
I
IB
Input
bias
current
(see
Note
4)
ODD
,
VIC = VDD/2 70°C 40 600 50 600
pA
VICR
Common-mode input volta
g
e25°C–0.2
to
4
–0.3
to
4.2
–0.2
to
9
–0.3
to
9.2 V
V
ICR
g
range (see Note 5) Full range –0.2
to
3.5
–0.2
to
8.5 V
V 100 V
25°C 3.2 4.1 8 8.9
VOH High-level output voltage VID = 100 mV,
RL=1MΩ
0°C 3 4.1 7.8 8.9 V
RL
=
1
MΩ
70°C 3 4.2 7.8 8.9
V 100 V
25°C 0 50 0 50
VOL Low-level output voltage VID = –100 mV,
IOL =0
0°C 0 50 0 50 mV
IOL
=
0
70°C 0 50 0 50
L i l diff ti l lt
R1MΩ
25°C 50 520 50 870
AVD Large-signal differential voltage
am
p
lification
RL = 1 MΩ,
See Note 6
0°C 50 700 50 1030 V/mV
am lification
See
Note
6
70°C 50 380 50 660
25°C 65 94 65 97
CMRR Common-mode rejection ratio VIC = VICRmin 0°C 60 95 60 97 dB
70°C 60 95 60 97
S l lt j ti ti
V 5Vt 10V
25°C 70 97 70 97
kSVR Supply-voltage rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V,
VO=14V
0°C 60 97 60 97 dB
(∆VDD/∆VIO)
VO
=
1
.
4
V
70°C 60 98 60 98
II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD 25°C 65 95 nA
V
O
= V
DD
/2
,
25°C 10 17 14 23
IDD Supply current
VO
VDD/2,
VIC = VDD/2,
Nl d
0°C 12 21 18 33 µA
No load 70°C 8 14 11 20
†Full range is 0°C to 70°C.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
LOW-BIAS MODE
operating characteristics, VDD = 5 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 0.03
VI
(
PP
)
= 1 V 0°C 0.04
SR
Slew rate at unity gain
RL=1MΩ
CL=20
p
F
()
70°C 0.03
V/µs
SR
Slew
rate
at
unity
gain
R
L =
1
MΩ
,
C
L =
20
pF
25°C 0.03
V/
µ
s
VI
(
PP
)
= 2.5 V 0°C 0.03
()
70°C 0.02
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 68 nV/√Hz
25°C 5
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 1 MΩ0°C6kHz
70°C 4.5
25°C 85
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C100 kHz
70°C 65
25°C 34°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C36°
70°C 30°
operating characteristics, VDD = 10 V
PARAMETER TEST CONDITIONS T
A
TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
25°C 0.05
VI
(
PP
)
= 1 V 0°C 0.05
SR
Slew rate at unity gain
RL=1MΩ
CL=20
p
F
()
70°C 0.04
V/µs
SR
Slew
rate
at
unity
gain
R
L =
1
MΩ
,
C
L =
20
pF
25°C 0.04
V/
µ
s
VI(PP) = 5.5 V 0°C 0.05
()
70°C 0.04
VnEquivalent input noise voltage f = 1 kHz, RS = 20 Ω25°C 68 nV/√Hz
25°C 1
BOM Maximum output-swing bandwidth VO = VOH, CL = 20 pF, RL = 1 MΩ0°C1.3 kHz
70°C 0.9
25°C110
B1Unity-gain bandwidth VI = 10 mV, CL = 20 pF 0°C125 kHz
70°C 90
25°C 38°
φmPhase margin VI = 10 mV, f = B1,C
L = 20 pF 0°C 40°
70°C 34°
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
11
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics at specified free-air temperature, VDD = 1.4 V
PARAMETER TEST CONDITIONS
†
T
A‡
BIAS TLC251C, TLC251AC,
TLC251BC UNIT
A
MIN TYP MAX
TLC251C
25°C
Any
10
TLC251C
Full range
Any
12
VIO
Input offset
TLC251AC
VO=02V
RS=50Ω
25°C
Any
5
mV
V
IO voltage
TLC251AC
V
O =
0
.
2
V
,
R
S =
50
Ω
Full range
Any
6.5
mV
TLC251BC
25°C
Any
2
TLC251BC
Full range
Any
3
αVIO Average temperature
coefficient of input offset
voltage 25°C to 70°C Any 1 µV/°C
IIO
In
p
ut offset current
VO=02V
25°C
Any
1 60 p
A
I
IO
Input
offset
current
V
O =
0
.
2
V
Full range
Any
300
pA
IIB
In
p
ut bias current
VO=02V
25°C
Any
1 60 p
A
I
IB
Input
bias
current
V
O =
0
.
2
V
Full range
Any
600
pA
VICR Common-mode input
voltage range 25°C Any 0
to
0.2 V
VOM Peak output voltage
swing§VID = 100 mV 25°C Any 450 700 mV
AVD
Lar
g
e-si
g
nal differential
VO= 100 to 300 mV
RS=50Ω
25
°
C
Low 20
A
VD
gg
voltage amplification
V
O =
100
to
300
mV
,
R
S =
50
Ω
25°C
High 10
CMRR Common-mode rejection
ratio RS = 50 Ω,
VIC = VICRmin VO = 0.2 V, 25°C Any 60 77 dB
IDD
Su
pp
ly current
VO=02V
No load
25
°
C
Low 5 17
µA
I
DD
Supply
current
V
O =
0
.
2
V
,
No
load
25°C
High 150 190 µ
A
†All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise
noted, an output load resistor is connected from the output to ground and has the following values: for low bias, RL = 1 MΩ, for medium bias,
RL = 100 kΩ, and for high bias, RL = 10 kΩ.
‡Full range is 0°C to 70°C.
§The output swings to the potential of VDD–/GND.
operating characteristics, VDD = 1.4 V, TA = 25°C
PARAMETER TEST CONDITIONS BIAS TLC251C, TLC251AC,
TLC251BC UNIT
MIN TYP MAX
B1
Unity gain bandwidth
CL= 100
p
F
Low 12
kHz
B
1
Unity
-
gain
bandwidth
C
L =
100
pF
High 12
kHz
SR
Slew rate at unity gain
See Figure 1
Low 0.001
V/µs
SR
Slew
rate
at
unity
gain
See
Figure
1
High 0.1
V/
µ
s
Overshoot factor
See Figure 1
Low 35%
Overshoot
factor
See
Figure
1
High 30%
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
12 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
electrical characteristics, VDD = 5 V, TA = 25°C
TLC251Y
PARAMETER TEST CONDITIONS HIGH-BIAS
MODE MEDIUM-BIAS
MODE LOW-BIAS
MODE UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
VIO Input offset voltage VO = 1.4 V,
VIC = 0 V,
RS = 50 Ω,RL†1.1 10 1.1 10 1.1 10 mV
αVIO Average temperature
coefficient of input
offset voltage 1.8 1.7 1.1 µV/°C
IIO Input offset current
(see Note 4) VO = VDD/2,
VIC = VDD/2 0.1 60 0.1 60 0.1 60 pA
IIB Input bias current
(see Note 4) VO = VDD/2,
VIC = VDD/2 0.6 60 0.6 60 0.6 60 pA
VICR Common-mode input
voltage range
(see Note 5)
–0.2
to
4
–0.3
to
4.2
–0.2
to
4
–0.3
to
4.2
–0.2
to
4
–0.3
to
4.2 V
VOH High-level output
voltage VID = 100 mV,
RL†3.2 3.8 3.2 3.9 3.2 4.1 V
VOL Low-level output
voltage VID = –100 mV,
IOL = 0 0 50 0 50 0 50 mV
AVD Large-signal
differential voltage
amplification
VO = 0.25 V,
RL†5 23 25 170 50 480 V/mV
CMRR Common-mode
rejection ratio VIC = VICRmin 65 80 65 91 65 94 dB
kSVR Supply-voltage
rejection ratio
(∆VDD/∆VIO)
VDD = 5 V to 10 V,
VO = 1.4 V 65 95 70 93 70 97 dB
II(SEL) Input current
(BIAS SELECT) VI(SEL) = VDD/2 –1.4 –0.13 0.065 µA
IDD Supply current VO = VDD/2,
VIC = VDD/2,
No load 675 1600 105 280 10 17 µA
†For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ.
NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.
5. This range also applies to each input individually.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
13
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
operating characteristics, VDD = 5 V, TA = 25°C
TLC251Y
PARAMETER TEST CONDITIONS HIGH-BIAS
MODE MEDIUM-BIAS
MODE LOW-BIAS
MODE UNIT
MIN TYP MAX MIN TYP MAX MIN TYP MAX
SR
Slew rate at R
L†
,VI(PP) = 1 V 3.6 0.43 0.03
V/µs
SR
unity gain
L,
CL = 20 pF VI(PP) = 2.5 V 2.9 0.40 0.03
V/
µ
s
VnEquivalent input
noise voltage f = 1 kHz, RS = 20 Ω25 32 68 nV/√Hz
BOM Maximum output
swing bandwidth VO = VOH,
RL = 10 kΩCL = 20 pF, 320 55 4.5 kHz
B1Unity-gain
bandwidth VI = 10 mV, CL = 20 pF 1700 525 65 kHz
φmPhase margin f = B1,
CL = 20 pF VI = 10 mV, 46°40°34°
†For high-bias mode, RL = 10 kΩ; for medium-bias mode, RL = 100 kΩ; and for low-bias mode, RL = 1 MΩ.
PARAMETER MEASUREMENT INFORMATION
Figure 1. Unity-Gain Amplifier
–
+Output
Input
CL = 100 pF RL
BIAS RL
Low 1 MΩ
Medium 100 kΩ
High 10 kΩ
Figure 2. Input Offset Voltage Null Circuit
–
+
25 kΩ
N1
N2
IN–
IN+ Output
GND
TYPICAL CHARACTERISTICS
Table of Graphs
FIGURE
IDD
Su
pp
ly current
vs Bias-select voltage
vs Su
pp
ly voltage
3
4
I
DD
Supply
current
vs
S
upp
l
y vo
lt
age
vs Free-air temperature
4
5
Low bias vs Frequency 6
AVD Large-signal differential voltage amplification Medium bias vs Frequency 7
High bias vs Frequency 8
Low bias vs Frequency 6
Phase shift Medium bias vs Frequency 7
High bias vs Frequency 8
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
14 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
Figure 3
100
10
10.1 1
– Supply Current –
1000
SUPPLY CURRENT
vs
BIAS-SELECT VOLTAGE
10000
10 100
IDD Aµ
VDD = 16 V
VDD = 4 V
VDD = 1.4 V
VB – Bias-Select Voltage – V
VO = VIC = 0.2 VDD
No Load
TA = 25°C
Figure 4
10
0024681012
100
1000
SUPPLY CURRENT
vs
SUPPLY VOLTAGE
10000
14 16 18 20
– Supply Current –IDD Aµ
VDD – Supply Voltage – V
Medium-Bias Versions
Low-Bias Versions
VO = VIC = 0.2 VDD
No Load
TA = 25°CHigh-Bias Versions
10
00102030405060
100
1000
10000
70 80
– Supply Current –IDD Aµ
TA – Free-Air Temperature – °C
SUPPLY CURRENT
vs
FREE-AIR TEMPERATURE
VDD = 10 V
VIC = 0 V
VO = 2 V
No Load
Medium-Bias Versions
Low-Bias Versions
High-Bias Versions
Figure 5
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
15
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
0.1 1 10 100 1 k 10 k 100 k
LOW-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
Frequency – Hz
107
106
105
104
103
102
101
1
0.1
Phase Shift
(right scale)
AVD (left scale)
VDD = 10 V
RL = 1 MΩ
TA = 25°C
Phase Shift
0°
30°
60°
90°
120°
150°
180°
– Differential Voltage AmplificationAVD
Figure 6
1 10 100 1 k 10 k 100 k 1 M
MEDIUM-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
– Differential Voltage AmplificationAVD
Frequency – Hz
107
106
105
104
103
102
101
1
0.1
Phase Shift
(right scale)
AVD (left scale)
VDD = 10 V
RL = 100 kΩ
TA = 25°C
Phase Shift
0°
30°
60°
90°
120°
150°
180°
Figure 7
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
16 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
TYPICAL CHARACTERISTICS
10 100 1 k 10 k 100 k 1 M 10 M
– Differential Voltage AmplificationAVD
Phase Shift
HIGH-BIAS LARGE-SIGNAL
DIFFERENTIAL VOLTAGE AMPLIFICATION
AND PHASE SHIFT
vs
FREQUENCY
Frequency – Hz
107
106
105
104
103
102
101
1
0.1
Phase Shift (right scale)
AVD (left scale)
VDD = 10 V
RL = 10 kΩ
TA = 25°C0°
30°
60°
90°
120°
150°
180°
Figure 8
APPLICATION INFORMATION
latch-up avoidance
Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under
certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.
To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.
In general, the operational amplifier supplies should be applied simultaneously with, or before, application of
any input signals.
TLC251, TLC251A, TLC251B, TLC251Y
LinCMOS PROGRAMMABLE
LOW-POWER OPERATIONAL AMPLIFIERS
SLOS001F – JULY 1983 – REVISED MARCH 2001
17
POST OFFICE BOX 655303 • DALLAS, TEXAS 75265
APPLICATION INFORMATION
using BIAS SELECT
The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three IDD conditions (10,
150, and 1000 µA typical). This allows the user to trade-off power and ac performance. As shown in the typical
supply current (IDD) versus supply voltage (VDD) curves (Figure 4), the IDD varies only slightly from 4 V to 16 V .
Below 4 V, the IDD varies more significantly. Note that the IDD values in the medium- and low-bias modes at
VDD = 1.4 V are typically 2 µA, and in the high mode are typically 12 µA. The following table shows the
recommended BIAS SELECT connections at VDD = 10 V.
BIAS MODE AC PERFORMANCE BIAS SELECT
CONNECTION†TYPICAL IDD‡
Low
Medium
High
Low
Medium
High
VDD
0.8 V to 9.2 V
Ground pin
10 µA
150 µA
1000 µA
†Bias selection may also be controlled by external circuitry to conserve power , etc.
For information regarding BIAS SELECT, see Figure 3 in the typical
characteristics curves.
‡For IDD characteristics at voltages other than 10 V, see Figure 4 in the typical
characteristics curves.
output stage considerations
The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain
pulldown transistor. The high-level output voltage (VOH) is virtually independent of the IDD selection and
increases with higher values of VDD and reduced output loading. The low-level output voltage (VOL) decreases
with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to
the potential of VDD–/GND.
input offset nulling
The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-kΩ
potentiometer connected between the offset null terminals with the wiper connected to the device VDD–/GND
pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an IDD setting of 1000 µA
(high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or medium bias
or when the amplifier is used below 4 V, total nulling may not be possible for all units.
supply configurations
Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a
split-supply configuration when the input common-mode voltage (VICR), output swing (VOL and VOH), and
supply voltage limits are not exceeded.
circuit layout precautions
The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in
layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive
dc leakages.
PACKAGE OPTION ADDENDUM
www.ti.com 30-Jul-2011
Addendum-Page 1
PACKAGING INFORMATION
Orderable Device Status (1) Package Type Package
Drawing Pins Package Qty Eco Plan (2) Lead/
Ball Finish MSL Peak Temp (3) Samples
(Requires Login)
TLC251ACD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251ACDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
TLC251ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
TLC251BCP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
TLC251BCPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
TLC251CD ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251CDG4 ACTIVE SOIC D 8 75 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251CDR ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS
& no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
TLC251CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
TLC251CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
PACKAGE OPTION ADDENDUM
www.ti.com 30-Jul-2011
Addendum-Page 2
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
TLC251CDR SOIC D 8 2500 340.5 338.1 20.6
TLC251CDR SOIC D 8 2500 367.0 367.0 35.0
PACKAGE MATERIALS INFORMATION
www.ti.com 14-Jul-2012
Pack Materials-Page 2
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