TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 D D D D D Wide Range of Supply Voltages 1.4-V to 16-V True Single-Supply Operation Common-Mode Input Voltage Range Includes the Negative Rail Low Noise . . . 30 nV/Hz Typ at 1-kHz (High Bias) ESD Protection Exceeds 2000 V Per MIL-STD-833C, Method 3015.1 D OR P PACKAGE (TOP VIEW) OFFSET N1 IN - IN + VDD - /GND 1 8 2 7 3 6 4 5 BIAS SELECT VDD OUT OFFSET N2 symbol description BIAS SELECT The TLC251C, TLC251AC, and TLC251BC are low-cost, low-power programmable operational + IN + amplifiers designed to operate with single or dual OUT IN - supplies. Unlike traditional metal-gate CMOS - operational amplifiers, these devices utilize Texas Instruments silicon-gate LinCMOS process, OFFSET N1 giving them stable input offset voltages without OFFSET N2 sacrificing the advantages of metal-gate CMOS. This series of parts is available in selected grades of input offset voltage and can be nulled with one external potentiometer. Because the input common-mode range extends to the negative rail and the power consumption is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the application. The series features operation down to a 1.4-V supply and is stable at unity gain. These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised in handling these devices as exposure to ESD may result in a degradation of the device parametric performance. Because of the extremely high input impedance and low input bias and offset currents, applications for the TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective use of these devices. Many features associated with bipolar technology are available with LinCMOS operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series. In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers can have software-controlled performance and power consumption. The TLC251C series is well suited to solve the difficult problems associated with single battery and solar cell-powered applications. The TLC251C series is characterized for operation from 0C to 70C. AVAILABLE OPTIONS TA VIOmax AT 25C 0C to 70C 10 mV 5 mV 2 mV PACKAGED DEVICES SMALL OUTLINE (D) TLC251CD TLC251ACD TLC251BCD PLASTIC DIP (P) TLC251CP TLC251ACP TLC251BCP CHIP FORM (Y) TLC251Y -- -- The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are tested at 25C. LinCMOS is a trademark of Texas Instruments. Copyright 2001, Texas Instruments Incorporated PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 1 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 schematic VDD 7 Current Control IN + IN - 3 ESDProtective Network 2 ESDProtective Network ESDProtective Network 8 BIAS SELECT 6 OFFSET N1 1 OFFSET N2 5 VDD - /GND 2 4 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 OUT TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 TLC251Y chip information These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive epoxy or a gold-silicon preform. BONDING PAD ASSIGNMENTS (2) VDD (1) (8) (7) BIAS SELECT IN + (8) (3) (2) IN - OFFSET N1 OFFSET N2 48 (7) + (6) OUT - (1) (5) (4) VDD - /GND CHIP THICKNESS: 15 TYPICAL BONDING PADS: 4 x 4 MINIMUM TJMAX = 150C (3) (4) (5) (6) TOLERANCES ARE 10%. ALL DIMENSIONS ARE IN MILS. 55 PIN (4) IS INTERNALLY CONNECTED TO BACKSIDE OF CHIP. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 3 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) Supply voltage, VDD (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Differential input voltage, VID (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 V Input voltage range, VI (any input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 0.3 V to 18 V Duration of short circuit at (or below) 25C free-air temperature (see Note 3) . . . . . . . . . . . . . . . . . . unlimited Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating free-air temperature range, TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0C to 70C Storage temperature range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 65C to 150C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260C Stresses beyond those listed under "absolute maximum ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values, except differential voltages, are with respect to VDD - /GND. 2. Differential voltages are at IN+ with respect to IN -. 3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation rating is not exceeded. DISSIPATION RATING TABLE TA 25C POWER RATING DERATING FACTOR ABOVE TA = 25C TA = 70C POWER RATING D 725 mW 5.8 mW/C 464 mW P 1000 mW 8.0 mW/C 640 mW PACKAGE recommended operating conditions MIN Supply voltage, VDD Common mode input voltage, Common-mode voltage VIC VDD = 1.4 V VDD = 5 V VDD = 10 V VDD = 16 V Operating free-air temperature, TA 1.4 16 0 0.2 - 0.2 4 - 0.2 9 - 0.2 14 0 70 UNIT V V C See Application Information Bias-select voltage 4 MAX POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 HIGH-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA VDD = 5 V TYP MAX MIN 25C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 , RL = 10 k TLC251BC VIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25C 0.9 Full range 25C 0.34 0.9 10 5 6.5 2 0.39 3 3 1.8 VO = VDD/2,, VIC = VDD/2 25C 0.1 60 0.1 60 70C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25C 0.6 60 0.7 60 70C 40 600 50 600 - 0.2 to 4 Full range - 0.2 to 3.5 VID = 100 mV, V RL = 10 k VID = - 100 mV, V IOL = 0 k RL = 10 k, See Note 6 VIC = VICRmin V/C 2 - 0.3 to 4.2 - 0.2 to 9 - 0.3 to 9.2 pA V 3.2 3.8 8 8.5 0C 3 3.8 7.8 8.5 70C 3 3.8 7.8 8.4 V 25C 0 50 0 50 0C 0 50 0 50 0 50 0 50 25C 5 23 10 36 0C 4 27 7.5 42 70C 4 20 7.5 32 25C 65 80 65 85 0C 60 84 60 88 70C 60 85 60 88 25C 65 95 65 95 0C 60 94 60 94 70C 60 96 60 96 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (VDD/VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = 0 25C - 1.4 675 1600 950 2000 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25C IDD 0C 775 1800 1125 2200 70C 575 1300 750 1700 kSVR pA V - 0.2 to 8.5 25C 70C mV 2 25C to 70C 25C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB A - 1.9 A Full range is 0C to 70C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 5 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 HIGH-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 k, k CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 m Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 CL = 20 pF, RL = 10 k CL = 20 pF f = B1, CL = 20 pF TYP 25C 3.6 0C 4 70C 3 25C 2.9 0C 3.1 70C 2.5 25C 25 25C 320 0C 340 70C 260 25C 1.7 0C 2 70C 1.3 25C 46 0C 47 70C 44 UNIT MAX V/s nV/Hz kHz MHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 10 k, k CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 m 6 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 CL = 20 pF, RL = 10 k CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF * DALLAS, TEXAS 75265 TYP 25C 5.3 0C 5.9 70C 4.3 25C 4.6 0C 5.1 70C 3.8 25C 25 25C 200 0C 220 70C 140 25C 2.2 0C 2.5 70C 1.8 25C 49 0C 50 70C 46 UNIT MAX V/s nV/Hz kHz MHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 MEDIUM-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA VDD = 5 V TYP MAX MIN 25C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 , RL = 10 k TLC251BC VIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25C 0.9 Full range 25C 0.34 0.9 10 5 6.5 2 0.39 3 3 1.7 VO = VDD/2,, VIC = VDD/2 25C 0.1 60 0.1 60 70C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25C 0.6 60 0.7 60 70C 40 600 50 600 - 0.2 to 4 Full range - 0.2 to 3.5 VID = 100 mV, V RL = 10 k VID = - 100 mV, V IOL = 0 k RL = 10 k, See Note 6 VIC = VICRmin V/C 2.1 - 0.3 to 4.2 - 0.2 to 9 - 0.3 to 9.2 pA V 25C 3.2 3.9 8 8.7 0C 3 3.9 7.8 8.7 70C 3 4 7.8 8.7 V 25C 0 50 0 50 0C 0 50 0 50 0 50 0 50 25C 25 170 25 275 0C 15 200 15 320 70C 15 140 15 230 25C 65 91 65 94 0C 60 91 60 94 70C 60 92 60 94 25C 70 93 70 93 0C 60 92 60 92 70C 60 94 60 94 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (VDD/VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 25C - 130 105 280 143 300 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25C IDD 0C 125 320 173 400 70C 85 220 110 280 kSVR pA V - 0.2 to 8.5 70C mV 2 25C to 70C 25C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB - 160 nA A Full range is 0C to 70C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 7 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 MEDIUM-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 k k, CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 m Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin RS = 20 f = 1 kHz, VO = VOH, CL = 20 pF, VI = 10 mV, RL = 100 k CL = 20 pF VI = 10 mV, f = B1, CL = 20 pF TYP 25C 0.43 0C 0.46 70C 0.36 25C 0.40 0C 0.43 70C 0.34 25C 32 25C 55 0C 60 70C 50 25C 525 0C 600 70C 400 25C 40 0C 41 70C 39 UNIT MAX V/s nV/Hz kHz kHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 100 k k, CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 m 8 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 CL = 20 pF, RL = 100 k CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF * DALLAS, TEXAS 75265 TYP 25C 0.62 0C 0.67 70C 0.51 25C 0.56 0C 0.61 70C 0.46 25C 32 25C 35 0C 40 70C 30 25C 635 0C 710 70C 510 25C 43 0C 44 70C 42 UNIT MAX V/s nV/Hz kHz kHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 LOW-BIAS MODE electrical characteristics at specified free-air temperature TLC251C, TLC251AC, TLC251BC TEST CONDITIONS PARAMETER TA VDD = 5 V TYP MAX MIN 25C TLC251C VIO Input offset voltage TLC251AC VO = 1 1.4 4V V, VIC = 0 V,, RS = 50 , RL = 10 M TLC251BC VIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) IIB Input bias current (see Note 4) VICR VOH VOL AVD CMRR Full range Low-level output voltage L i l differential diff ti l voltage lt Large-signal am lification amplification Common-mode rejection ratio 10 1.1 12 25C 0.9 Full range 25C 0.24 0.9 10 5 6.5 2 0.26 3 3 1.1 VO = VDD/2,, VIC = VDD/2 25C 0.1 60 0.1 60 70C 7 300 7 300 VO = VDD/2,, VIC = VDD/2 25C 0.6 60 0.7 60 70C 40 600 50 600 - 0.2 to 4 Full range - 0.2 to 3.5 VID = 100 mV, V RL = 1 M VID = - 100 mV, V IOL = 0 M RL = 1 M, See Note 6 VIC = VICRmin V/C 1 - 0.3 to 4.2 - 0.2 to 9 - 0.3 to 9.2 pA V 3.2 4.1 8 8.9 0C 3 4.1 7.8 8.9 70C 3 4.2 7.8 8.9 V 25C 0 50 0 50 0C 0 50 0 50 0 50 0 50 25C 50 520 50 870 0C 50 700 50 1030 70C 50 380 50 660 25C 65 94 65 97 0C 60 95 60 97 70C 60 95 60 97 25C 70 97 70 97 0C 60 97 60 97 70C 60 98 60 98 mV V/mV dB Supply-voltage S l lt rejection j ti ratio ti (VDD/VIO) VDD = 5 V to t 10 V, V VO = 1 1.4 4V II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD 25C 65 10 17 14 23 Supply current VO = VDD/2, VIC = VDD/2, N lload d No 25C IDD 0C 12 21 18 33 70C 8 14 11 20 kSVR pA V - 0.2 to 8.5 25C 70C mV 2 25C to 70C 25C UNIT 12 5 6.5 Full range Common-mode input voltage g range (see Note 5) High-level output voltage 1.1 VDD = 10 V TYP MAX MIN dB 95 nA A Full range is 0C to 70C. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 9 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 LOW-BIAS MODE operating characteristics, VDD = 5 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 M M, CL = 20 pF VI(PP) ( ) = 2.5 V Vn BOM B1 m Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 CL = 20 pF, RL = 1 M CL = 20 pF f = B1, CL = 20 pF TYP 25C 0.03 0C 0.04 70C 0.03 25C 0.03 0C 0.03 70C 0.02 25C 68 25C 5 0C 6 70C 4.5 25C 85 0C 100 70C 65 25C 34 0C 36 70C 30 UNIT MAX V/s nV/Hz kHz kHz operating characteristics, VDD = 10 V PARAMETER TEST CONDITIONS TA TLC251C, TLC251AC, TLC251BC MIN VI(PP) ( )=1V SR Slew rate at unity gain RL = 1 M M, CL = 20 pF VI(PP) ( ) = 5.5 V Vn BOM B1 m 10 Equivalent input noise voltage Maximum output-swing bandwidth Unity-gain bandwidth Phase margin f = 1 kHz, VO = VOH, VI = 10 mV, VI = 10 mV, RS = 20 CL = 20 pF, RL = 1 M CL = 20 pF f = B1, POST OFFICE BOX 655303 CL = 20 pF * DALLAS, TEXAS 75265 TYP 25C 0.05 0C 0.05 70C 0.04 25C 0.04 0C 0.05 70C 0.04 25C 68 25C 1 0C 1.3 70C 0.9 25C 110 0C 125 70C 90 25C 38 0C 40 70C 34 UNIT MAX V/s nV/Hz kHz kHz TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 electrical characteristics at specified free-air temperature, VDD = 1.4 V TA TEST CONDITIONS PARAMETER BIAS TLC251C, TLC251AC, TLC251BC MIN 25C TLC251C VIO Input offset voltage TLC251AC Full range 2V VO = 0 0.2 V, 25C RS = 50 Full range 25C TLC251BC Full range VIO Average temperature coefficient of input offset voltage IIO Input offset current VO = 0 0.2 2V IIB Input bias current VO = 0 0.2 2V VICR Common-mode input voltage range VOM Peak output voltage swing VID = 100 mV AVD Large-signal differential g g voltage amplification VO = 100 to 300 mV mV, RS = 50 25C CMRR Common-mode rejection ratio RS = 50 , VIC = VICRmin VO = 0.2 V, 25C IDD Supply current 2V VO = 0 0.2 V, No load 25C 25C to 70C 25C Full range 25C Full range TYP 10 Any 12 5 Any 6.5 mV 2 Any 3 Any V/C 1 1 Any 60 300 1 Any 60 600 25C Any 0 to 0.2 25C Any 450 700 Low 20 10 60 pA pA V High Any UNIT MAX mV 77 dB Low 5 17 High 150 190 A All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise noted, an output load resistor is connected from the output to ground and has the following values: for low bias, RL = 1 M, for medium bias, RL = 100 k, and for high bias, RL = 10 k. Full range is 0C to 70C. The output swings to the potential of VDD - /GND. operating characteristics, VDD = 1.4 V, TA = 25C PARAMETER TEST CONDITIONS BIAS TLC251C, TLC251AC, TLC251BC MIN B1 Unity gain bandwidth Unity-gain CL = 100 pF SR Slew rate at unity gain See Figure 1 Overshoot factor See Figure 1 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TYP Low 12 High 12 Low 0.001 High 0.1 Low 35% High 30% UNIT MAX kHz V/s 11 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 electrical characteristics, VDD = 5 V, TA = 25C TLC251Y PARAMETER TEST CONDITIONS HIGH-BIAS MODE MIN VO = 1.4 V, VIC = 0 V, RS = 50 , MEDIUM-BIAS MODE TYP MAX 1.1 10 MIN LOW-BIAS MODE TYP MAX 1.1 10 MIN UNIT TYP MAX 1.1 10 VIO Input offset voltage mV VIO Average temperature coefficient of input offset voltage IIO Input offset current (see Note 4) VO = VDD/2, VIC = VDD/2 0.1 60 0.1 60 0.1 60 pA IIB Input bias current (see Note 4) VO = VDD/2, VIC = VDD/2 0.6 60 0.6 60 0.6 60 pA VICR Common-mode input voltage range (see Note 5) VOH High-level output voltage VOL Low-level output voltage VID = 100 mV, RL VID = - 100 mV, IOL = 0 AVD Large-signal differential voltage amplification VO = 0.25 V, RL CMRR Common-mode rejection ratio kSVR RL 1.8 1.7 V/C 1.1 - 0.2 to 4 - 0.3 to 4.2 - 0.2 to 4 - 0.3 to 4.2 - 0.2 to 4 - 0.3 to 4.2 V 3.2 3.8 3.2 3.9 3.2 4.1 V 0 50 0 50 0 50 mV 5 23 25 170 50 480 V/mV VIC = VICRmin 65 80 65 91 65 94 dB Supply-voltage rejection ratio (VDD /VIO) VDD = 5 V to 10 V, VO = 1.4 V 65 95 70 93 70 97 dB II(SEL) Input current (BIAS SELECT) VI(SEL) = VDD/2 0.065 A IDD Supply current VO = VDD/2, VIC = VDD/2, No load - 1.4 675 - 0.13 1600 105 280 10 For high-bias mode, RL = 10 k; for medium-bias mode, RL = 100 k; and for low-bias mode, RL = 1 M. NOTES: 4. The typical values of input bias current and input offset current below 5 pA were determined mathematically. 5. This range also applies to each input individually. 12 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 17 A TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 operating characteristics, VDD = 5 V, TA = 25C TLC251Y PARAMETER HIGH-BIAS MODE TEST CONDITIONS MIN TYP MEDIUM-BIAS MODE MAX MIN TYP LOW-BIAS MODE MAX MIN TYP UNIT MAX SR Slew rate at unity gain RL, CL = 20 pF VI(PP) = 1 V VI(PP) = 2.5 V 3.6 0.43 0.03 2.9 0.40 0.03 Vn Equivalent input noise voltage f = 1 kHz, RS = 20 25 32 68 nV/Hz BOM Maximum output swing bandwidth VO = VOH, RL = 10 k CL = 20 pF, 320 55 4.5 kHz B1 Unity-gain bandwidth VI = 10 mV, CL = 20 pF 1700 525 65 kHz m Phase margin f = B1, CL = 20 pF VI = 10 mV, 46 40 34 V/s For high-bias mode, RL = 10 k; for medium-bias mode, RL = 100 k; and for low-bias mode, RL = 1 M. PARAMETER MEASUREMENT INFORMATION IN - - IN + + - Output Output Input + BIAS Low Medium High N1 CL = 100 pF RL N2 RL 1 M 100 k 10 k 25 k GND Figure 1. Unity-Gain Amplifier Figure 2. Input Offset Voltage Null Circuit TYPICAL CHARACTERISTICS Table of Graphs FIGURE IDD Supply current AVD Large-signal differential voltage amplification Phase shift vs Bias-select voltage vs Supply voltage vs Free-air temperature 3 4 5 Low bias vs Frequency 6 Medium bias vs Frequency 7 High bias vs Frequency 8 Low bias vs Frequency 6 Medium bias vs Frequency 7 High bias vs Frequency 8 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 13 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 TYPICAL CHARACTERISTICS SUPPLY CURRENT vs SUPPLY VOLTAGE SUPPLY CURRENT vs BIAS-SELECT VOLTAGE 10000 10000 VO = VIC = 0.2 VDD No Load TA = 25C 1000 I DD - Supply Current - A I DD - Supply Current - A VO = VIC = 0.2 VDD No Load TA = 25C VDD = 16 V 100 VDD = 4 V VDD = 1.4 V 10 1 0.1 1000 Medium-Bias Versions 100 Low-Bias Versions 10 0 10 1 100 0 2 4 6 8 Figure 4 Figure 3 SUPPLY CURRENT vs FREE-AIR TEMPERATURE 10000 VDD = 10 V VIC = 0 V VO = 2 V No Load High-Bias Versions I DD - Supply Current - A 10 1000 Medium-Bias Versions 100 Low-Bias Versions 10 0 0 12 14 VDD - Supply Voltage - V VB - Bias-Select Voltage - V 10 20 30 40 50 60 TA - Free-Air Temperature - C Figure 5 14 High-Bias Versions POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 70 80 16 18 20 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 TYPICAL CHARACTERISTICS LOW-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 1 M TA = 25C 106 105 0 30 AVD (left scale) 104 60 103 90 Phase Shift (right scale) 102 120 101 150 1 180 Phase Shift A VD - Differential Voltage Amplification 107 0.1 0.1 1 10 100 1k 10 k 100 k Frequency - Hz Figure 6 MEDIUM-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 100 k TA = 25C 106 105 0 30 AVD (left scale) 104 60 103 90 Phase Shift (right scale) 102 120 101 150 1 180 Phase Shift A VD - Differential Voltage Amplification 107 0.1 1 10 100 1k 10 k 100 k 1M Frequency - Hz Figure 7 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 15 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 TYPICAL CHARACTERISTICS HIGH-BIAS LARGE-SIGNAL DIFFERENTIAL VOLTAGE AMPLIFICATION AND PHASE SHIFT vs FREQUENCY VDD = 10 V RL = 10 k TA = 25C 106 105 0 30 104 60 Phase Shift (right scale) 103 90 102 120 Phase Shift A VD - Differential Voltage Amplification 107 AVD (left scale) 101 150 1 180 0.1 10 100 1k 10 k 100 k 1M 10 M Frequency - Hz Figure 8 APPLICATION INFORMATION latch-up avoidance Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current. To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin. In general, the operational amplifier supplies should be applied simultaneously with, or before, application of any input signals. 16 POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 TLC251, TLC251A, TLC251B, TLC251Y LinCMOS PROGRAMMABLE LOW-POWER OPERATIONAL AMPLIFIERS SLOS001F - JULY 1983 - REVISED MARCH 2001 APPLICATION INFORMATION using BIAS SELECT The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three IDD conditions (10, 150, and 1000 A typical). This allows the user to trade-off power and ac performance. As shown in the typical supply current (IDD) versus supply voltage (VDD) curves (Figure 4), the IDD varies only slightly from 4 V to 16 V. Below 4 V, the IDD varies more significantly. Note that the IDD values in the medium- and low-bias modes at VDD = 1.4 V are typically 2 A, and in the high mode are typically 12 A. The following table shows the recommended BIAS SELECT connections at VDD = 10 V. BIAS MODE AC PERFORMANCE BIAS SELECT CONNECTION TYPICAL IDD Low Medium High Low Medium High VDD 0.8 V to 9.2 V Ground pin 10 A 150 A 1000 A Bias selection may also be controlled by external circuitry to conserve power, etc. For information regarding BIAS SELECT, see Figure 3 in the typical characteristics curves. For IDD characteristics at voltages other than 10 V, see Figure 4 in the typical characteristics curves. output stage considerations The amplifier's output stage consists of a source-follower-connected pullup transistor and an open-drain pulldown transistor. The high-level output voltage (VOH) is virtually independent of the IDD selection and increases with higher values of VDD and reduced output loading. The low-level output voltage (VOL) decreases with reduced output current and higher input common-mode voltage. With no load, VOL is essentially equal to the potential of VDD - /GND. input offset nulling The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-k potentiometer connected between the offset null terminals with the wiper connected to the device VDD - /GND pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an IDD setting of 1000 A (high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or medium bias or when the amplifier is used below 4 V, total nulling may not be possible for all units. supply configurations Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a split-supply configuration when the input common-mode voltage (VICR), output swing (VOL and VOH), and supply voltage limits are not exceeded. circuit layout precautions The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive dc leakages. POST OFFICE BOX 655303 * DALLAS, TEXAS 75265 17 PACKAGE OPTION ADDENDUM www.ti.com 30-Jul-2011 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Drawing Pins Package Qty Eco Plan (2) Lead/ Ball Finish MSL Peak Temp TLC251ACD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251ACDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251ACP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC251ACPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC251BCP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC251BCPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC251CD ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251CDG4 ACTIVE SOIC D 8 75 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251CDR ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251CDRG4 ACTIVE SOIC D 8 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TLC251CP ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type TLC251CPE4 ACTIVE PDIP P 8 50 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type (3) Samples (Requires Login) (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) Addendum-Page 1 PACKAGE OPTION ADDENDUM www.ti.com (3) 30-Jul-2011 MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 TLC251CDR SOIC D 8 2500 330.0 12.4 6.4 5.2 2.1 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Jul-2012 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TLC251CDR SOIC D 8 2500 340.5 338.1 20.6 TLC251CDR SOIC D 8 2500 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46C and to discontinue any product or service per JESD48B. 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