HL6320G98 - OpNext, Inc. - Datasheet.Live

117

HL6319/20G

AlGaInP Laser Diodes

Description

The HL6319/20G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure.

They are suitable as light sources for laser levelers and optical equipment for measurement.

Application

• Laser levelers

• Measurement

Features

• Visible light output: 635nm Typ (nearly equal to He-Ne gas laser)

• Optical output power: 10 mW CW

• Low operating current: 95 mA Max

• Low operating voltage: 2.7 V Max

LD LDPD PD

1 1

3 3

Internal Circuit

• HL6319G Internal Circuit

• HL6320G

Package Type

• HL6319/20G: G2

HL6319/20G

118

Absolute Maximum Ratings (TC = 25°C)

Item Symbol Value Unit

Optical output power PO10 mW

LD reverse voltage VR(LD) 2V

PD reverse voltage VR(PD) 30 V

Operating temperature Topr –10 to +50 °C

Storage temperature Tstg –40 to +85 °C

Optical and Electrical Characteristics (TC = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Optical output power PO10 — — mW Kink free

Threshold current Ith 20 50 75 mA

Operating current IOP —7095mAP

= 10 mW

Operating voltage VOP — — 2.7 V PO = 10 mW

Slope efficiency ηs 0.3 0.5 0.7 mW/mA 6(mW)/(I(8mW)–I(2mW))

Lasing wavelength λp 625 635 640 nm PO = 10 mW

Beam divergence

(parallel) θ// 5 8 11 deg. PO = 10 mW

Beam divergence

(perpendicular) θ⊥ 25 31 37 deg. PO = 10 mW

Monitor current Is 0.05 0.17 0.30 mA PO = 10 mW, VR(PD) = 5 V

HL6319/20G

119

Typical Characteristics Curves

Slope Efficiency vs.Case Temperature

Case Temperture, T

(°C)

−100 10203050

Slope Efficiency, ηs (mW/mA)

0.2

0.4

0.6

0.8

1.0

Optical output power, PO (mW)

00100 200

Foward current I (mA)

50°C

25°C

Optical Output Power vs.Foward Current

Optical output power, P (mW)

Monitor current, I (mA)

0.20

0.15

0.10

0.05

0 246810

R(PD)

=5 V

=25°C

Optical Output Power vs.Monitor Current

−10 0 10 20 30 40

200

100

Threshould current I (mA)

Case temperature, T (°C)

Threshold Current vs.Case Temperature

= −10°C

HL6319/20G

120

Lasing Spectrum

Wavelength λp (nm)

625 630 635 640 645 650

Relative intensity

PO=1 mW

PO=5 mW

PO=10 mW

TC=25°C

Lasing Wavelength vs. Case Temperature

Case Temperture, TC (°C)

01020304050

Lasing wavelength, λp (nm)

630

635

645

650

640

PO=10 mW

−10

Polarization Ratio vs.

Optical Output Power

Optical output power PO (mW)

0246810

Polarization Ratio

200

400

600

800

NA=0.4

TC=25°C

Monitor Current vs. Case Temprature

Case Temperture, TC (°C)

−10 010

20 30 40

Monitor current, IS (mA)

0.1

0.2

0.3

0.4 PO=10 mW

VR=5 V

HL6319/20G

121

002 64

= 25°C

NA= 0.55

810

Optical output power, PO (mW)

Astigmastism, AS (µm)

Astigmastism vs. Optical Output Power

0.2

0.4

0.6

0.8

1.0

−40 −20 0 20 40

Forward current, IF (deg)

Relative intensity

0Parallel

Perpendicular

Far Field Pattern

PO=10 mW

TC=25°C

−30 −10 10 30

HL6319/20G

122

Polarization direction

The polarization direction is TM mode. The polarization of 0.63 µm LD’s is different from that of

0.83/0.78/0.67 µm LD’s. The polarization direction of 0.63 µm LD’s is illustrated in the figure below.

Electric field

• TM mode

Magnetic field

Top view

Hitachi Code

JEDEC

EIAJ

Weight

(reference value)

LD/G2

—

1.1 g

Unit: mm

123

9.0

–0.025

φ1.0 ± 0.1

0.4+0.1

–0

(0.65)

(90°)

7.2 +0.3

–0.2

φ6.2 ± 0.2

( 2.0)

Emitting Point

2.45

1.5 ± 0.1

9 ± 1

3 – 0.45 ± 0.1

3.5 ± 0.2 0.3

Glass

φ2.54 ± 0.35

Datasheet Title

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The

laser beam shall be observed or adjusted through infrared camera or equivalent.

Datasheet Title

Hitachi, Ltd.

Semiconductor & Integrated Circuits.

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

Hitachi Asia Pte. Ltd.

16 Collyer Quay #20-00

Hitachi Tower

Singapore 049318

Tel: 535-2100

Fax: 535-1533

URL NorthAmerica : http:semiconductor.hitachi.com/

Europe : http://www.hitachi-eu.com/hel/ecg

Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm

Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm

Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm

Japan : http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.

Taipei Branch Office

3F, Hung Kuo Building. No.167,

Tun-Hwa North Road, Taipei (105)

Tel: <886> (2) 2718-3666

Fax: <886> (2) 2718-8180

Hitachi Asia (Hong Kong) Ltd.

Group III (Electronic Components)

7/F., North Tower, World Finance Centre,

Harbour City, Canton Road, Tsim Sha Tsui,

Kowloon, Hong Kong

Tel: <852> (2) 735 9218

Fax: <852> (2) 730 0281

Telex: 40815 HITEC HX

Hitachi Europe Ltd.

Electronic Components Group.

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire SL6 8YA, United Kingdom

Tel: <44> (1628) 585000

Fax: <44> (1628) 778322

Hitachi Europe GmbH

Electronic components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89) 9 9180-0

Fax: <49> (89) 9 29 30 00

Hitachi Semiconductor

(America) Inc.

179 East Tasman Drive,

San Jose,CA 95134

Tel: <1> (408) 433-1990

Fax: <1>(408) 433-0223

For further information write to: