MS2321 RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS Features * * * * * * 1025 - 1150 MHz 50 VOLT OPERATION POUT = 15 WATTS GP = 10 dB MINIMUM 20:1 VSWR CAPABILITY @ RATED CONDITIONS COMMON BASE CONFIGURATION DESCRIPTION: The MS2321 is a gold metallized, silicon NPN power transistor designed for pulsed applications with low duty cycles such as IFF, DME and TACAN. Internal impedance matching is utilized for maximum broadband performance and simplified external matching. ABSOLUTE MAXIMUM RATINGS (Tcase = 25 C) Symbol VCBO VCES VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature Thermal Data RTH(J-C) Thermal Resistance Junction-case Value Unit 2.0 C/W 65 65 3.5 1.5 87.5 +200 -65 to +150 V V V A W C C MSCXXXX.PDF 05-18-99 Advanced Power Technology reserves the right to change, without notice, the specifications and information contained herein. Visit our web site at WWW.ADVANCEDPOWER.COM or contact our factory direct. MS2321 ELECTRICAL SPECIFICATIONS (Tcase = 25 25 C) STATIC Symbol BV CBO BV CES BV EBO ICES HFE Test Conditions IC = 10mA IC = 25mA IE = 1mA VCE = 50V VCE = 5V DYNAMIC Symbol Min. IE = 0mA VBE = 0V IC = 0mA IE = 0mA IC = 100mA 65 65 3.5 --10 Max. Unit ----------- ------2 200 V V V mA --- Min. Value Typ. Max. Unit POUT f =1025 - 1150 MHz PIN = 1.5W VCC = 50V 15 --- --- W GP f =1025 - 1150 MHz PIN = 1.5W VCC = 50V 10 --- --- dB f =1025 - 1150 MHz PIN = 1.5W VCC = 50V 30 --- --- % hC Condition s Test Conditions Value Typ. Pulse Width = 10 m s Duty Cycle = 1% IMPEDANCE DATA FREQ ZIN (W) ZCL (W) 1025 MHz 3.0 + j5.0 5.8 + j7.5 1090 MHz 3.8 + j7.5 3.3 + j8.5 1150 MHz 2.5 + j20.0 6.0 + j8.9 VCC = 50V PIN = 1.5W MSCXXXX.PDF 05-18-99 MS2321 PACKAGE MECHANICAL DATA MSCXXXX.PDF 05-18-99