ITT SEMICOND/ INTERMETALL bIE 0D BAV100... BAV103 4682711 0003148 T?4 MBIST Silicon Epitaxial Planar Diodes for general purpose These diodes are also available in DO-35 case with the type designations BAV18 ... BAV21. These diodes are delivered taped. Details see Taping Absolute Maximum Ratings te 3520.1 Cathode Mark ut FI 45200 > 1 Lt 03401 Glass case MiniMELF Weight approx. 0.05 g Dimensions in mm Symbol Value Unit Reverse Voltage BAV100 Vr 60 Vv BAV101 Ve 120 Vv BAV102 Ver 200 Vv BAV103 VR 250 Vv Forward DC Current at Tam = 25 C Ir 250) mA Rectified Current (Average) lo 200) mA Half Wave Rectification with Resist. Load at Tamb = 25 C and f =50 Hz Repetitive Peak Forward Current lea 625") mA at f =50 Hz, = 180C, Tam = 25C Surge Forward Current at t<1 s, T, = 25C lesm 1 A Power Dissipation at Tan) = 25 C Prot 400") mw Junction Temperature T, 175 C Storage Temperature Range Ts 65 to +175 C ) Valid provided that electrodes are kept at ambient temperature. 72 ITT SEMICOND/ INTERMETALL bLE D MM 4682711 0003349 900 MHISI Characteristics at T; = 25C Symbol Min. Typ. Max. Unit Forward voltage at lr = 100 mA VE - - 1 Vv Leakage Current at Va = 50V BAV100 Ip - - 100 nA at Va = 50 V, T, = 100C BAV100 Ir - 15 BA at Va = 100 V BAV101 Ig - - 100 nA at Va = 100 V, T, = 100 C BAV101 le - _ 15 BA at Va = 150 V BAV102 Ip - - 100 nA at Va = 150 V, T, = 100C BAV102 lq - _ 15 BA at Va = 200 V BAV103 In _ - 100 nA at Va = 200 V, T, = 100C BAV103 In - - 15 pA Dynamic Forward Resistance ts - 5 = 0 atl- = 10mA Capacitance Crot - 1.5 ~ pF at Vp = 0, f = 1 MHz Reverse Recovery Time tr - - 50 ns from Ir = 30 mA through I, = 30 mA to I_p = 3 mA; R, = 100 0 Thermal Resistance Rina - _ 0.375") K/mW Junction to Ambient Air ) Valid provided that electrodes are kept at ambient temperature. 73 ITT SEMICOND/ INTERMETALL bLE D BAV100... BAV103 4682711 0003150 tee MISTI Forward characteristics Admissible forward current versus ambient temperature Valid provided that electrodes are kept at ambient 200 100 0 100 200C temperature mA BAV100... A BAVi00... 1000 0,3 j-100 Io.te \ NN -- 02 DC current Jr 10 | N Current (rectif) o\ | 1 \ 01 , \ x \ gor o | 0 02 4 06 08 10 V 0 30 60 90 120 -150 C > Tomb Admissible power dissipation Leakage current versus ambient temperature versus junction temperature Valid provided that electrodes are kept at ambient temperature mw BAV100... BAV100... 500 1 1000 5 Ip (7) Pop 400 Ip (25C) \ 100 N \ 5 300 N \ 2 10 1 Reverse Voltage BAV100 Vz= 50V 5 BAV101 Vp = 100 V BAV102 Vp = 150 V BAV103 Vg = 200 V 0) 0 100 200 C 74 ITT SEMTCOND/ INTERMETALL BLE D MM 4682731 0003151 565 MISSI BAV100...BAV103 Dynamic forward resistance versus forward current 100 5 Q BAV100... 100 mA Capacitance versus reverse voltage pF BAV100... 2 T= 25C 48 16 14 a eee -- 12 MN ] _ | 0,8 06 04 Q2 0 Ot 2 5 1 2 s 10 2 s 100 V 75