MOSFET
MetalOxideSemiconductorFieldEffectTransistor
OptiMOS™Small-Signal-Transistor,100V
BSL296SN
DataSheet
Rev.2.0
Final
Industrial&Multimarket
BSL296SN
OptiMOS
™
Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• RoHS compliant
• Halogen-free according to IEC61249-2-21
Maximum ratings, at T
j
=25 °C, unless otherwise specified
PG-TSOP6
VD
S
100 V
RDS(on),max V
GS
=10 V 460 mΩ
V
GS
=4.5 V 560
ID1.4 A
Product Summary
Type Package Tape and Reel Info Marking Halogen Free Packing
BSL296SN TSOP6 H6327: 3000 pcs/ reel sLZ Yes Non dry
1
23
4
5
6
Parameter Symbol Conditions Unit
Continuous drain current IDTA=25 °C 1.4 A
TA=70 °C 1.1
Pulsed drain current ID,pulse TA=25 °C 5.6
Avalanche energy, single pulse EAS ID=1.4 A, RGS=25 Ω15.0 mJ
Reverse diode dv/dtdv/dtID=1.4 A, VDS=50 V,
di/dt=200 A/µs,
Tj,max=150 °C
6 kV/µs
Gate source voltage VGS ±20 V
Power dissipation1) Ptot TA=25 °C W
Operating and storage temperature Tj, Tstg -55 ... 150 °C
ESD Class JESD22-A114 -HBM 0 (<250V)
Soldering Temperature 260 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Value
2.0
Rev 2.0 page 1 2014-10-16
BSL296SN
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point RthJS - - 50 K/W
Thermal resistance RthJA minimal footprint - - 230
junction - ambient 6 cm2 cooling area1) - - 62.5
Electrical characteristics, at Tj=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage V(BR)DSS VGS=0 V, ID=250 µA 100 - - V
Gate threshold voltage VGS(th) VDS=Vgs V, ID=100 µ
A
0.8 1.4 1.8
Drain-source leakage current IDSS VDS=100 V, VGS=0 V,
Tj=25 °C - - 0.02 μA
V
DS
=100 V
,
V
GS
=0 V
,
Values
Rev 2.0 page 2 2014-10-16
V
DS
100
V
,
V
GS
0
V
,
Tj=150 °C --10
Gate-source leakage current IGSS VGS=20 V, VDS=0 V - - 10 nA
Drain-source on-state resistance RDS(on) VGS=4.5 V, ID=1.4 A - 357 560 mΩ
VGS=10 V, ID=1.26 A - 314 460
Transconductance gfs
|VDS|>2|ID|RDS(on)max,
ID=1.1 A 3.04 - S
1) Device on 40mm x 40mm x 1.5mm epoxy PCB FR4 with 6cm² (one layer, 70μm thick) copper area for drain
connection. PCB is vertical in still air. (t < 5 sec.)
Rev 2.0 page 2 2014-10-16
BSL296SN
Parameter Symbol Conditions Unit
min. typ. max.
D
y
namic characteristics2)
Input capacitance Ciss - 114.8 152.7 pF
Output capacitance Coss - 19.7 26.3
Reverse transfer capacitance Crss - 9.8 14.7
Turn-on delay time td(on) - 3.5 5.6 ns
Rise time tr- 3.0 4.5
Turn-off delay time td(off) - 17.1 25.65
Fall time tf- 4.5 8.1
Gate Char
g
e Characteristics2)
Gate to source charge Qgs - 0.27 0.4 nC
Gate to drain charge Qgd - 1.47 2.2
Gate charge total Qg- 2.7 4.0
Gate plateau voltage V
p
lateau - 2.5 - V
Values
VGS=0 V, VDS=25 V,
f=1 MHz
VDD=50 V, VGS=10 V,
ID=1.4 A, RG,ext=6 Ω
VDD=50 V, ID=1.4 A,
VGS=0 to 5 V
Rev 2.0 page 3 2014-10-16
pg
plateau
Reverse Diode
Diode continous forward current IS- - 1.4 A
Diode pulse current IS,pulse - - 5.6
Diode forward voltage VSD VGS=0 V, IF=1.4 A,
Tj=25 °C - 0.8 1.1 V
Reverse recovery time2) trr -2030ns
Reverse recovery charge2) Qrr -3755nC
2) Defined by design. Not subjected to production test
VR=50 V, IF=1.4 A,
diF/dt=200 A/µs
TA=25 °C
Rev 2.0 page 3 2014-10-16
BSL296SN
1 Power dissipation 2 Drain current
Ptot=f(TA)ID=f(TA); VGS≥10 V
0
0.5
1
1.5
2
2.5
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 40 80 120 160
ID[A]
TA[°C]
Rev 2.0 page 4 2014-10-16
3 Safe operating area 4 Max. transient thermal impedance
ID=f(VDS); TA=25 °C; D=0 ZthJA=f(tp)
parameter: tpparameter: D=tp/T
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
10-4 10-3 10-2 10-1 100101102
100
101
102
ZthJA [K/W]
tp[s]
0
0.5
1
1.5
2
2.5
0 40 80 120 160
Ptot [W]
TA[°C]
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 40 80 120 160
ID[A]
TA[°C]
1 µs
10 µs
100 µs
1 ms
10 ms
5 s
0.001
0.01
0.1
1
10
1 10 100 1000
ID[A]
VDS [V]
Rev 2.0 page 4 2014-10-16
BSL296SN
5 Typ. output characteristics 6 Typ. drain-source on resistance
ID=f(VDS); Tj=25 °C RDS(on)=f(ID); Tj=25 °C
parameter: VGS parameter: VGS
2.8 V 3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
250
500
750
1000
0 0.8 1.6 2.4 3.2 4 4.8 5.6
RDS(on) [mW]
ID[A]
2.8 V
3 V
3.3 V
3.5 V
4 V
10 V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
02468
ID[A]
VDS [V]
Rev 2.0 page 5 2014-10-16
7 Typ. transfer characteristics 8 Typ. forward transconductance
ID=f(VGS); |VDS|>2|ID|RDS(on)max gfs=f(ID); Tj=25 °C
0
1
2
3
4
5
6
7
0.0 0.8 1.6 2.4 3.2 4.0 4.8 5.6
gfs [S]
ID[A]
25 °C 150 °C
0
0.8
1.6
2.4
3.2
4
4.8
5.6
01234
ID[A]
VGS [V]
2.8 V 3 V
3.3 V
3.5 V
4 V
4.5 V
10 V
0
250
500
750
1000
0 0.8 1.6 2.4 3.2 4 4.8 5.6
RDS(on) [mW]
ID[A]
2.8 V
3 V
3.3 V
3.5 V
4 V
10 V
0
0.4
0.8
1.2
1.6
2
2.4
2.8
3.2
3.6
4
4.4
4.8
5.2
5.6
02468
ID[A]
VDS [V]
Rev 2.0 page 5 2014-10-16
BSL296SN
9 Drain-source on-state resistance 10 Typ. gate threshold voltage
RDS(on)=f(Tj); ID=1.4 A; VGS=10 V VGS(th)=f(Tj); VDS=VGS; ID=100 µA
parameter: ID
typ
max
0
200
400
600
800
1000
1200
-60 -40 -20 0 20 40 60 80 100 120 140 160
RDS(on) [mW]
Tj[°C]
0
0.4
0.8
1.2
1.6
2
2.4
-60 -10 40 90 140
VGS(th) [V]
Tj[°C]
typ
max
min
Rev 2.0 page 6 2014-10-16
11 Typ. capacitances 12 Forward characteristics of reverse diode
C=f(VDS); VGS=0 V; f=1 MHz; Tj=25°C IF=f(VSD)
parameter: Tj
typ
max
0
200
400
600
800
1000
1200
-60 -40 -20 0 20 40 60 80 100 120 140 160
RDS(on) [mW]
Tj[°C]
0
0.4
0.8
1.2
1.6
2
2.4
-60 -10 40 90 140
VGS(th) [V]
Tj[°C]
Ciss
Coss
Crss
100
101
102
103
0 102030405060708090100
C [pF]
VDS [V]
25 °C
150 °C
25 °C, 98%
150 °C, 98%
10-2
10-1
100
101
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
IF[A]
VSD [V]
typ
max
min
Rev 2.0 page 6 2014-10-16
BSL296SN
13 Avalanche characteristics 14 Typ. gate charge
IAS=f(tAV); RGS=25 ΩVGS=f(Qgate); ID=1.4 A pulsed
parameter: Tj(start) parameter: VDD
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
012345
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-1
100
101
IAV [A]
tAV [µs]
Rev 2.0 page 7 2014-10-16
15 Drain-source breakdown voltage 16 Gate charge waveforms
VBR(DSS)=f(Tj); ID=250 µA
80
84
88
92
96
100
104
108
112
116
120
-60 -20 20 60 100 140 180
VBR(DSS) [V]
Tj[°C]
20 V
50 V
80 V
0
1
2
3
4
5
6
7
8
9
10
012345
VGS [V]
Qgate [nC]
25 °C
100 °C
125 °C
100101102103
10-1
100
101
IAV [A]
tAV [µs]
V
GS
Q
gate
V
gs(th)
Q
g(th)
Q
gs
Q
gd
Q
sw
Q
g
Rev 2.0 page 7 2014-10-16
BSL296SN
TSOP6
Packa
g
e Outline:
Rev 2.0 page 8 2014-10-16
Note: For s
y
mmetric t
y
pes there is no defined Pin 1 orientation in the reel.
Rev 2.0 page 8 2014-10-16
9
BSL296SN
Rev.2.0,2014-10-22
RevisionHistory
BSL296SN
Revision:2014-10-22,Rev.2.0
Previous Revision
Revision Date Subjects (major changes since last revision)
2.0 2014-10-22 Release of final version
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
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BSL296SNH6327XTSA1