MS2091 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW DESCRIPTION KEY FEATURES The MS2091 is an internally-matched, common base silicon bipolar device optimized pulsed application in the 600 - 750 MHz frequency range. Housed in the industry standard AMPAC metal/ceramic package, this device uses a refractory/gold overlay die geometry for ruggedness and long-term reliability. Refractory/Gold Metallization Internal Input Matching Metal/Ceramic Hermetic Package POUT = 220 W Min. GP = 8.7 dB Gain IMPORTANT: For the most current data, consult visit: http://www.advancedpower.com APPLICATIONS/BENEFITS APPLICATIONS/BENEFITS Avionics Applications Symbol PDISS IC VCC TJ TSTG ABSOLUTE MAXIMUM RATINGS (TCASE = 25C) Parameter Power Dissipation* (T C 75C) Device Current* Collector-Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Temperature Value 875 16.0 55 250 -65 to +200 Unit W A V C C 0.20 C/W THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance * Applies only to rated RF amplifier operation MS2091 053-7108 Rev - 11-2002 MS2091 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol BVCBO BVEBO BVCER ICES hFE Test Conditions IC = 10 mA IE = 1 mA IC = 25mA VBE = 0 V VCE = 5 V Min. 65 3.5 65 IE = 0 mA IC = 0 mA RBE = 10 vCE = 50 V IC = 1 mA MS2091 Typ. Max. 25 120 15 Units V V V mA DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25C) Symbol POUT c GP Note: Test Conditions f = 600 - 750 MHz f = 600 - 750 MHz f = 600 - 750 MHz PIN = 30 W PIN = 30 W PIN = 30 W VCC = 50 V VCC = 50 V VCC = 50 V Min. 220 40 8.7 MS2091 Typ. Max. Units W % dB Pulse width = 10Sec Duty Cycle = 1% ELECTRICALS 053-7108 Rev - 11-2002 MS2091 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW PACKAGE DATTA 053-7108 Rev - 11-2002 MS2091 RF & MICROWAVE TRANSISTORS P RODUCT P REVIEW NOTES 053-7108 Rev - 11-2002