053-7108 Rev - 11-2002
MS2091
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
DESCRIPTION
DESCRIPTIONDESCRIPTION
DESCRIPTION
The MS2091 is an internally-matched, common base silicon bipolar
device optimized pulsed application in the 600 – 750 MHz frequency
range.
Housed in the industry standard AMPAC metal/ceramic package,
this device uses a refractory/gold overlay die geometry for ruggedness
and long-term reliability.
IMPORTANT: For the most current data, consult visit: http://www.advancedpower.com
KEY FEATURES
KEY FEATURES KEY FEATURES
KEY FEATURES
Refractory/Gold
Metallization
Internal Input Matching
Metal/Ceramic Hermetic
Package
POUT = 220 W Min.
GP = 8.7 dB Gain
APPLICATIONS/BENEFIT
APPLICATIONS/BENEFITAPPLICATIONS/BENEFIT
APPLICATIONS/BENEFITS
SS
S
Avionics Applications
* Applies only to rated RF amplifier operation
ABSOLUTE MAXIMUM RATINGS (TCASE = 25°
°°
°C)
Symbol Parameter Value Unit
PDISS Power Dissipation* (TC ≤ 75°C) 875 W
IC Device Current* 16.0 A
VCC Collector-Supply Voltage* 55 V
TJ Junction Temperature (Pulsed RF Operation) 250 °C
TSTG Storage Temperature -65 to +200 °C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance 0.20 °C/W
M
MS
S2
20
09
91
1
053-7108 Rev - 11-2002
MS2091
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
STATIC ELECTRICAL SPECIFICATIONS (TCASE = 25°
°°
°C)
MS2091
Symbol Test Conditions
Min. Typ. Max.
Units
BVCBO IC = 10 mA IE = 0 mA 65 V
BVEBO IE = 1 mA IC = 0 mA 3.5 V
BVCER IC = 25mA RBE = 10 Ω 65 V
ICES VBE = 0 V vCE = 50 V 25 mA
hFE VCE = 5 V IC = 1 mA 15 120
DYMANIC ELECTRICAL SPECIFICATIONS (TCASE = 25°
°°
°C)
MS2091
Symbol Test Conditions
Min. Typ. Max.
Units
POUT f = 600 – 750 MHz PIN = 30 W VCC = 50 V 220 W
η
ηη
ηc f = 600 – 750 MHz PIN = 30 W VCC = 50 V 40
%
GP f = 600 – 750 MHz PIN = 30 W VCC = 50 V 8.7 dB
Note: Pulse width = 10µSec
Duty Cycle = 1%
E
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RI
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053-7108 Rev - 11-2002
MS2091
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
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PA
AC
CK
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AG
GE
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DA
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053-7108 Rev - 11-2002
MS2091
RF & MICROWAVE TRANSISTORS
P
RODUCT
P
REVIEW
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