HGTP1N120CND, HGT1S1N120CNDS Data Sheet January 2000 6.2A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTP1N120CND and the HGT1S1N120CNDS are Non-Punch Through (NPT) IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is development type number TA49317. The diode used in anti-parallel with the IGBT is the RHRD4120 (TA49056). The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. File Number 4651.1 Features * 6.2A, 1200V, TC = 25oC * 1200V Switching SOA Capability * Typical EOFF . . . . . . . . . . . . . . . . . . 200J at TJ = 150oC * Short Circuit Rating * Low Conduction Loss * Temperature Compensating SABERTM Model Thermal Impedance SPICE Model www.intersil.com/ * Related Literature - TB334, "Guidelines for Soldering Surface Mount Components to PC Boards" Packaging JEDEC TO-220AB E C G Formerly developmental type TA49315. COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE BRAND HGTP1N120CND TO-220AB 1N120CND HGT1S1N120CNDS TO-263AB 1N120CND JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB in tape and reel, e.g. HGT1S1N120CNDS9A. COLLECTOR (FLANGE) G Symbol E C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,598,461 4,682,195 4,803,533 4,888,627 4,417,385 4,605,948 4,684,413 4,809,045 4,890,143 (c)2001 Fairchild Semiconductor Corporation 4,430,792 4,620,211 4,694,313 4,809,047 4,901,127 4,443,931 4,631,564 4,717,679 4,810,665 4,904,609 4,466,176 4,639,754 4,743,952 4,823,176 4,933,740 4,516,143 4,639,762 4,783,690 4,837,606 4,963,951 4,532,534 4,641,162 4,794,432 4,860,080 4,969,027 4,587,713 4,644,637 4,801,986 4,883,767 HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTP1N120CND, HGT1S1N120CNDS 1200 UNITS V 6.2 3.2 A A Average Rectified Forward Current at TC = 148oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .. IF(AV) Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA 4 6 20 30 6A at 1200V A A V V Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering Leads at 0.063in (1.6cm) from Case for 10s . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 60 0.476 -55 to 150 W W/oC oC 300 oC Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .Tpkg Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 13V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 260 8 11 oC Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 s s CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Single Pulse; VGE = 15V; Pulse width limited by maximum junction temperature. 2. VCE(PK) = 840V, TJ = 125oC, RG = 82 . Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER Collector to Emitter Breakdown Voltage Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage SYMBOL BVCES ICES VCE(SAT) VCE = BVCES IC = 1.0A, VGE = 15V TC = 25oC TC = 125oC TC = 150oC TC = 25oC TC = 150oC IC = 50A, VCE = VGE MIN TYP MAX UNITS 1200 - - V - - 250 A - 20 - A - - 1.0 mA - 2.05 2.4 V - 2.75 3.2 V 6.0 7.1 - V Gate to Emitter Leakage Current IGES VGE = 20V - - 250 nA Switching SOA SSOA TJ = 150oC, RG = 82 , VGE = 15V, L = 2mH, VCE(PK) = 1200V 6 - - A VGEP IC = 1.0A, VCE = 0.5 BVCES - 9.7 - V IC = 1.0A, VCE = 0.5 BVCES VGE = 15V - 13 19 nC VGE = 20V - 16 28 nC Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time VGE(TH) TEST CONDITIONS IC = 250A, VGE = 0V QG(ON) td(ON)I trI td(OFF)I tfI IGBT and Diode at TJ = 25oC ICE = 1.0A, VCE = 0.8 BVCES, VGE = 15V, RG = 82, L = 4mH, Test Circuit (Figure 20) - 15 21 ns - 11 15 ns - 65 95 ns - 365 450 ns Turn-On Energy (Note 3) EON - 175 195 J Turn-Off Energy (Note 3) EOFF - 140 155 J (c)2001 Fairchild Semiconductor Corporation HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I TEST CONDITIONS IGBT and Diode at TJ = 150oC, ICE = 1.0 A, VCE = 0.8 BVCES, VGE = 15V, RG = 82, L = 4mH, Test Circuit (Figure 20) MIN TYP MAX UNITS - 13 20 ns - 11 18 ns - 75 100 ns tfI - 465 625 ns Turn-On Energy (Note 3) EON - 385 460 J Turn-Off Energy (Note 3) EOFF - 200 225 J Diode Forward Voltage VEC - 1.3 1.8 V Current Fall Time Diode Reverse Recovery Time IEC = 1A trr Thermal Resistance Junction To Case RJC IEC = 1A, dIEC/dt = 200A/s - - 50 ns IGBT - - 2.1 oC/W Diode - - 3 oC/W NOTE: 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-on losses include losses due to diode recovery. Unless Otherwise Specified VGE = 15V 6 5 4 3 2 1 0 25 50 75 100 125 150 7 TJ = 150oC, RG = 82, VGE = 15V, L = 2mH 6 5 4 3 2 1 0 0 TC , CASE TEMPERATURE (oC) TJ = 150oC, RG = 82, L = 4mH, VCE = 960V 100 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) 10 PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RJC = 2.1oC/W, SEE NOTES 5 1.0 0.5 TC 75oC 75oC 110oC 110oC VGE 15V 13V 15V 13V 2.0 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation 600 800 1000 1200 1400 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA 3.0 tSC , SHORT CIRCUIT WITHSTAND TIME (ms) fMAX , OPERATING FREQUENCY (kHz) 200 400 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE 300 200 20 20 VCE = 840V, RG = 82, TJ = 125oC 18 18 tSC 16 16 14 14 ISC 12 12 10 13 14 10 15 ISC, PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 7 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS Unless Otherwise Specified (Continued) ICE, COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 6 TC = 25oC 5 TC = -55oC 4 TC = 150oC 3 2 1 0 DUTY CYCLE < 0.5%, VGE = 13V PULSE DURATION = 250s 0 1 2 3 4 5 7 6 8 6 TC = 25oC 5 4 TC = -55oC 2 1 DUTY CYCLE < 0.5%, VGE = 15V PULSE DURATION = 250s 0 0 EOFF , TURN-OFF ENERGY LOSS (J) EON , TURN-ON ENERGY LOSS (J) 500 1000 TJ = 150oC, VGE = 13V TJ = 150oC, VGE = 15V 600 400 TJ = 25oC, VGE = 13V 0 0.5 TJ = 25oC, VGE = 15V 1 1.5 2 2.5 400 300 200 TJ = 25oC, VGE = 13V OR 15V 100 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 24 28 RG = 82, L = 4mH, VCE = 960V RG = 82, L = 4mH, VCE = 960V TJ = 25oC, VGE = 13V 24 TJ = 25oC, TJ = 150oC, VGE = 13V 20 TJ = 150oC, VGE = 13V trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 8 7 TJ = 150oC, VGE = 13V OR 15V 0 0.5 3 FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 16 TJ = 25oC, VGE = 15V 12 TJ = 150oC, VGE = 15V 1 6 RG = 82, L = 4mH, VCE = 960V ICE , COLLECTOR TO EMITTER CURRENT (A) 8 0.5 5 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE RG = 82, L = 4mH, VCE = 960V 200 4 3 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 800 2 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 1200 TC = 150oC 3 1.5 2 2.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT (c)2001 Fairchild Semiconductor Corporation 20 16 12 TJ = 25oC, TJ = 150oC, VGE = 15V 8 3 4 0.5 1 1.5 2 2.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS Typical Performance Curves Unless Otherwise Specified (Continued) 560 520 80 76 TJ = 150oC, VGE = 15V 72 TJ = 150oC, VGE = 13V TJ = 25oC, VGE = 15V 68 64 60 480 400 360 280 1 1.5 2 2.5 TJ = 25oC, VGE = 13V OR 15V 240 0.5 3 ICE , COLLECTOR TO EMITTER CURRENT (A) 1 2 2.5 3 FIGURE 12. TURN-OFF FALL TIME vs COLLECTOR TO EMITTER CURRENT 15 VGE , GATE TO EMITTER VOLTAGE (V) 16 DUTY CYCLE < 0.5%, VCE = 10V 14 PULSE DURATION = 250s 12 TC = -55oC 10 8 TC = 25oC 6 4 TC = 150oC 2 6 9 9 6 3 IG(REF) = 1mA, RL = 600, TC = 25oC 0 4 300 CIES 250 200 150 100 COES 50 CRES 10 15 20 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE (c)2001 Fairchild Semiconductor Corporation 25 ICE, COLLECTOR TO EMITTER CURRENT (A) FREQUENCY = 1MHz 5 12 16 20 FIGURE 14. GATE CHARGE WAVEFORMS 350 0 8 QG , GATE CHARGE (nC) FIGURE 13. TRANSFER CHARACTERISTIC 0 VCE = 1200V VCE = 400V 0 15 12 VCE = 800V 12 VGE , GATE TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 1.5 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 0 TJ = 150oC, VGE = 13V OR 15V 440 320 TJ = 25oC, VGE = 13V 56 0.5 ICE , COLLECTOR TO EMITTER CURRENT (A) RG = 82, L = 4mH, VCE = 960V RG = 82, L = 4mH, VCE = 960V tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 84 12 PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = 110oC 10 VGE = 15V 8 6 VGE = 14V 4 VGE = 13V 2 0 0 2 4 6 8 10 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 16. COLLECTOR TO EMITTER ON-STATE VOLTAGE HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS ZJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 2.0 1.0 0.5 0.2 0.1 0.1 0.05 0.02 0.01 t1 SINGLE PULSE DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD X ZJC X RJC) + TC 0.01 0.005 10-5 10-4 10-3 10-2 PD t2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 17. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE 70 TC = 25oC, dIEC/dt = 200A/s 60 t, RECOVERY TIMES (ns) IEC , FORWARD CURRENT (A) 5 2 TC = 150oC TC = -55oC 1 0.5 TC = 25oC 0.2 0.1 50 trr 40 30 ta 20 tb 10 0 0.4 0.8 1.2 1.6 2.0 0 0.5 VEC , FORWARD VOLTAGE (V) 1 2 3 4 5 IEC , FORWARD CURRENT (A) FIGURE 18. DIODE FORWARD CURRENT vs FORWARD VOLTAGE DROP FIGURE 19. RECOVERY TIMES vs FORWARD CURRENT Test Circuit and Waveforms VGE 90% L = 4mH 10% RHRD4120 EON EOFF RG = 82 ICE ICE 90% + - VDD = 960V VCE 10% tfI td(ON)I trI td(OFF)I FIGURE 20. INDUCTIVE SWITCHING TEST CIRCUIT (c)2001 Fairchild Semiconductor Corporation FIGURE 21. SWITCHING TEST WAVEFORMS HGTP1N120CND, HGT1S1N120CNDS Rev. A HGTP1N120CND, HGT1S1N120CNDS Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDTM LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM . Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM . td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC)/RJC . The sum of device switching and conduction losses must not exceed PD . A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON and EOFF are defined in the switching waveforms shown in Figure 21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. (c)2001 Fairchild Semiconductor Corporation HGTP1N120CND, HGT1S1N120CNDS Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H