MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# SS8050 Features * * * * * * TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25 OC) of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V Operating and storage junction temperature range: -55OC to +150 OC Marking Code: SS8050 NPN Silicon Transistors Pin Configuration TO-92 A C E BE Electrical Characteristics @ 25OC Unless Otherwise Specified Symbol Parameter Min Max Units 40 --- Vdc 25 --- Vdc 5.0 --- Vdc --- 0.1 uAdc --- 0.1 uAdc --- 0.1 uAdc B OFF CHARACTERISTICS V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO Collector-Base Breakdown Voltage (IC=100uAdc, IE =0) Collector-Emitter Breakdown Voltage (IC=0.1mAdc, IB =0) Emitter-Base Breakdown Voltage (IE =100uAdc, IC=0) Collector Cutoff Current (VCB=40Vdc, IE =0) Collector Cutoff Current (VCE=20Vdc, IB =0) Emitter Cutoff Current (VEB =5.0Vdc, IC=0) C ON CHARACTERISTICS hFE(1) hFE(2) VCE(sat) VBE(sat) VEB D DC Current Gain (IC=100mAdc, V CE=1.0Vdc) DC Current Gain (IC=800mAdc, V CE=1.0Vdc) Collector-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base-Emitter Saturation Voltage (IC=800mAdc, IB =80mAdc) Base- Emitter Voltage (IE =1.5Adc) 85 300 --- 40 --- --- --- 0.5 Vdc --- 1.2 Vdc --- 1.6 Vdc SMALL-SIGNAL CHARACTERISTICS fT Transistor Frequency (IC=50mAdc, VCE=10Vdc, f=30MHz) 190 --- CLASSIFICATION OF HFE (1) Rank Range C 120-200 MHz G DIMENSIONS DIM A B C D E G INCHES MIN .170 .170 .550 .010 .130 .010 MAX .190 .190 .590 .020 .160 .104 MM MIN 4.33 4.30 13.97 0.36 3.30 2.44 MAX 4.83 4.83 14.97 0.56 3.96 2.64 NOTE D 160-300 www.mccsemi.com Revision: 3 2004/07/26