SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 180 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1A
Continuous Collector Current IC0.5 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180 V IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180 V IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA*
Base-Emitter Turn-OnVoltage VBE(on) 0.9 V IC=200mA, VCE
=5V*
Static Forward Current Transfer
Ratio
hFE 500
150
IC=100mA, VCE
=5V*
IC=200mA, VCE
=5V*
Transition Frequency fT70 MHz IC=50mA, VCE
=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 6pFV
CE
=10V, f=1MHz
Switching Times ton
toff
80
4400
ns
ns
IC=100mA, IB1=10mA
IB2=10mA, VCC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT696B FZT696B
3 - 227
C
C
E
B
3 - 228
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
1.5K
1K
500
h- Typical Gain
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
V
CE
=5V
I
C
/I
B
=50
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=100
I
C
/I
B
=50
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
SOT223 NPN SILICON PLANAR MEDIUM
POWER HIGH GAIN TRANSISTOR
ISSUE 4 FEBRUARY 1997
FEATURES
* 250 Volt VCEO
* Gain of 500 at IC=100mA
* Very low saturation voltage
APPLICATIONS
* Darlington replacement
* Battery powered circuits
PARTMARKING DETAIL FZT696B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage VCBO 180 V
Collector-Emitter Voltage VCEO 180 V
Emitter-Base Voltage VEBO 5V
Peak Pulse Current ICM 1A
Continuous Collector Current IC0.5 A
Power Dissipation at Tamb
=25°C Ptot 2W
Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO 180 V IC=100µA
Collector-Emitter Breakdown
Voltage
V(BR)CEO 180 V IC=10mA*
Emitter-Base Breakdown Voltage V(BR)EBO 5V
IE=100µA
Collector Cut-Off Current ICBO 0.1 µAVCB
=140V
Emitter Cut-Off Current IEBO 0.1 µAVEB
=4V
Collector-Emitter Saturation
Voltage
VCE(sat) 0.2
0.2
0.25
V
V
V
IC=50mA, IB=0.5mA*
IC=100mA, IB=2mA*
IC=200mA, IB=5mA*
Base-Emitter Saturation Voltage VBE(sat) 0.9 V IC=200mA, IB=5mA*
Base-Emitter Turn-OnVoltage VBE(on) 0.9 V IC=200mA, VCE
=5V*
Static Forward Current Transfer
Ratio
hFE 500
150
IC=100mA, VCE
=5V*
IC=200mA, VCE
=5V*
Transition Frequency fT70 MHz IC=50mA, VCE
=5V
f=50MHz
Input Capacitance Cibo 200 pF VEB
=0.5V, f=1MHz
Output Capacitance Cobo 6pFV
CE
=10V, f=1MHz
Switching Times ton
toff
80
4400
ns
ns
IC=100mA, IB1=10mA
IB2=10mA, VCC
=50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
FZT696B FZT696B
3 - 227
C
C
E
B
3 - 228
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
0.4
0.2
0
0.8
0.6
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 1 10
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
0.01 0.1 110
1.0
0.8
0.6
0.4
0
0.2
1.6
1.4
1.2
TYPICAL CHARACTERISTICS
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
VCE(sat) v IC
I
C
- Collector Current (Amps)
V - (Volts)
I
C
- Collector Current (Amps) I
C
- Collector Current (Amps)
hFE v IC V
BE(sat) v IC
I
C
- Collector Current (Amps)
VBE(on) v IC
h- Normalised Gain
V - (Volts)
V - (Volts)
1.5K
1K
500
h- Typical Gain
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
0
0
-55°C
+25°C
+100°C
+175°C
V
CE
=5V
I
C
/I
B
=50
I
C
/I
B
=50
V
CE
=5V
I
C
/I
B
=10
I
C
/I
B
=100
I
C
/I
B
=50
1
0.1
Safe Operating Area
VCE - Collector Emitter Voltage (V)
10V 100V
1s
DC
100ms
10ms
100
µ
s
1ms
1V
0.01
1000V
0.001
